Prati
Arnaud Bournel
Arnaud Bournel
Université Paris-Sud
Potvrđena adresa e-pošte na u-psud.fr - Početna stranica
Naslov
Citirano
Citirano
Godina
Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder
D Querlioz, Y Apertet, A Valentin, K Huet, A Bournel, S Galdin-Retailleau, ...
Applied Physics Letters 92 (4), 2008
1422008
On the ballistic transport in nanometer-scaled DG MOSFETs
J Saint Martin, A Bournel, P Dollfus
IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004
1332004
Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node
M Raine, G Hubert, M Gaillardin, L Artola, P Paillet, S Girard, ...
IEEE Transactions on Nuclear Science 58 (3), 840-847, 2011
1132011
On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation
D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ...
IEEE Transactions on Electron Devices 54 (9), 2232-2242, 2007
1012007
Intrinsic spin Hall conductivity of the semimetals and
J Zhou, J Qiao, A Bournel, W Zhao
Physical Review B 99 (6), 060408, 2019
972019
Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures
VN Do, VH Nguyen, P Dollfus, A Bournel
Journal of Applied Physics 104 (6), 063708-063708-7, 2008
912008
Resonant tunnelling diodes based on graphene/h-BN heterostructure
VH Nguyen, F Mazzamuto, A Bournel, P Dollfus
Journal of Physics D: Applied Physics 45 (32), 325104, 2012
892012
Gate-induced spin precession in an In0. 53Ga0. 47As two dimensional electron gas
A Bournel, P Dollfus, P Bruno, P Hesto
European Physical Journal-Applied Physics 4 (1), 1-4, 1998
871998
Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation
P Dollfus, A Bournel, S Galdin, S Barraud, P Hesto
IEEE Transactions on Electron Devices 51 (5), 749-756, 2004
862004
Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction
J Zhou, J Qiao, CG Duan, A Bournel, KL Wang, W Zhao
ACS applied materials & interfaces 11 (19), 17647-17653, 2019
852019
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas
J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus
Semiconductor science and technology 21 (4), L29, 2006
762006
Controllable spin-dependent transport in armchair graphene nanoribbon structures
VH Nguyen, VN Do, A Bournel, VL Nguyen, P Dollfus
Journal of Applied Physics 106 (5), 053710-053710-7, 2009
672009
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation
J Saint-Martin, A Bournel, P Dollfus
Solid-State Electronics 50 (1), 94-101, 2006
672006
A study of quantum transport in end-of-roadmap DG-MOSFETs using a fully self-consistent Wigner Monte Carlo approach
D Querlioz, J Saint-Martin, VN Do, A Bournel, P Dollfus
IEEE Transactions on Nanotechnology 5 (6), 737-744, 2006
642006
Current-limiting challenges for all-spin logic devices
L Su, Y Zhang, JO Klein, Y Zhang, A Bournel, A Fert, W Zhao
Scientific Reports 5, 14905, 2015
592015
An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs
D Querlioz, P Dollfus, VN Do, A Bournel, VL Nguyen
Journal of Computational Electronics 5, 443-446, 2006
582006
Graphene nanomesh transistor with high on/off ratio and good saturation behavior
S Berrada, V Hung Nguyen, D Querlioz, J Saint-Martin, A Alarcón, ...
Applied Physics Letters 103 (18), 2013
572013
Gate-driven pure spin current in graphene
X Lin, L Su, Z Si, Y Zhang, A Bournel, Y Zhang, JO Klein, A Fert, W Zhao
Physical Review Applied 8 (3), 034006, 2017
522017
Wigner Monte Carlo simulation of phonon-induced electron decoherence in semiconductor nanodevices
D Querlioz, J Saint-Martin, A Bournel, P Dollfus
Physical Review B—Condensed Matter and Materials Physics 78 (16), 165306, 2008
522008
Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect
VH Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus
Nanotechnology 23 (6), 065201, 2012
512012
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