gary wicks

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G R SavichMonroe Community College, University of RochesterPotvrđena adresa e-pošte na rochester.edu
Daniel SidorMIT Lincoln LaboratoryPotvrđena adresa e-pošte na ll.mit.edu
James R. ShealyCornell UniversityPotvrđena adresa e-pošte na ece.cornell.edu
Dennis G. HallProfessor of Physics, Vanderbilt UniversityPotvrđena adresa e-pošte na vanderbilt.edu
C. Barry CarterUConnPotvrđena adresa e-pošte na uconn.edu
Eby G. FriedmanDistinguished Professor, University of RochesterPotvrđena adresa e-pošte na ece.rochester.edu
Michael HuangUniversity of RochesterPotvrđena adresa e-pošte na rochester.edu
Yongli GaoProfessor of Physics, University of RochesterPotvrđena adresa e-pošte na pas.rochester.edu
Robert BoydUniversity of Ottawa and University of RochesterPotvrđena adresa e-pošte na optics.rochester.edu
Steven ShankSenior Engineer/Scientist, GlobalfoundriesPotvrđena adresa e-pošte na globalfoundries.com
Neil J. WatkinsPotvrđena adresa e-pošte na alumni.case.edu
K. Burak UcerResearch Associate Professor, Wake Forest UniversityPotvrđena adresa e-pošte na wfu.edu
Jerry WoodallUC DavisPotvrđena adresa e-pošte na ucdavis.edu
Gérard MourouEcole PolytechniquePotvrđena adresa e-pošte na polytechnique.edu
Robert R. AlfanoThe City College of New YorkPotvrđena adresa e-pošte na ccny.cuny.edu
Pamela L. Greeneformerly at the University of Rochester, Rochester, NYPotvrđena adresa e-pošte na alumni.rice.edu
Anders LarssonChalmers University of TechnologyPotvrđena adresa e-pošte na chalmers.se

Prati

gary wicks

university of rochester, cornell university, amethyst research

Potvrđena adresa e-pošte na optics.rochester.edu


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
detector, an infrared detector with reduced dark current and higher operating temperature S Maimon, GW Wicks Applied Physics Letters 89 (15), 151109, 2006	719	2006
Demonstration of zero optical backscattering from single nanoparticles S Person, M Jain, Z Lapin, JJ Sáenz, G Wicks, L Novotny Nano letters 13 (4), 1806-1809, 2013	534	2013
Binding of shallow donor impurities in quantum-well structures NC Jarosik, BD McCombe, BV Shanabrook, J Comas, J Ralston, G Wicks Physical review letters 54 (12), 1283, 1985	275	1985
Circularly symmetric operation of a concentric‐circle‐grating, surface‐emitting, AlGaAs/GaAs quantum‐well semiconductor laser T Erdogan, O King, GW Wicks, DG Hall, EH Anderson, MJ Rooks Applied physics letters 60 (16), 1921-1923, 1992	179	1992
Magnesium‐and calcium‐doping behavior in molecular‐beam epitaxial III‐V compounds CEC Wood, D Desimone, K Singer, GW Wicks Journal of Applied Physics 53 (6), 4230-4235, 1982	169	1982
Photoluminescence of Al_xGa_1−xAs grown by molecular beam epitaxy G Wicks, WI Wang, CEC Wood, LF Eastman, L Rathbun Journal of Applied Physics 52 (9), 5792-5796, 1981	166	1981
Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices JD Ralston, S O’brien, GW Wicks, LF Eastman Applied physics letters 52 (18), 1511-1513, 1988	138	1988
Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy P Enquist, GW Wicks, LF Eastman, C Hitzman Journal of applied physics 58 (11), 4130-4134, 1985	126	1985
Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells DF Welch, GW Wicks, LF Eastman Applied physics letters 46 (10), 991-993, 1985	119	1985
Oxidation study of GaN using x-ray photoemission spectroscopy NJ Watkins, GW Wicks, Y Gao Applied Physics Letters 75 (17), 2602-2604, 1999	117	1999
Calculation of the conduction band discontinuity for Ga_0.47In_0.53As/Al_0.48In_0.52As heterojunction DF Welch, GW Wicks, LF Eastman Journal of applied physics 55 (8), 3176-3179, 1984	117	1984
Hot electron relaxation time in GaN H Ye, GW Wicks, PM Fauchet Applied physics letters 74 (5), 711-713, 1999	115	1999
Photoluminescence study of confined donors in GaAs Al x Ga 1− x As quantum wells X Liu, A Petrou, BD McCombe, J Ralston, G Wicks Physical Review B 38 (12), 8522, 1988	112	1988
Enhanced linear and nonlinear optical phase response of AlGaAs microring resonators JE Heebner, NN Lepeshkin, A Schweinsberg, GW Wicks, RW Boyd, ... Optics letters 29 (7), 769-771, 2004	108	2004
Use of a valved, solid phosphorus source for the growth of Ga_0.5In_0.5P and Al_0.5In_0.5P by molecular beam epitaxy GW Wicks, MW Koch, JA Varriano, FG Johnson, CR Wie, HM Kim, ... Applied physics letters 59 (3), 342-344, 1991	106	1991
Defect structure and intermixing of ion‐implanted Al_xGa₁₋_xAs/GaAs superlattices J Ralston, GW Wicks, LF Eastman, BC De Cooman, CB Carter Journal of applied physics 59 (1), 120-123, 1986	103	1986
An intra-chip free-space optical interconnect J Xue, A Garg, B Ciftcioglu, J Hu, S Wang, I Savidis, M Jain, R Berman, ... ACM SIGARCH Computer Architecture News 38 (3), 94-105, 2010	101	2010
Dark current filtering in unipolar barrier infrared detectors GR Savich, JR Pedrazzani, DE Sidor, S Maimon, GW Wicks Applied Physics Letters 99 (12), 121112, 2011	96	2011
Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors JR Pedrazzani, S Maimon, GW Wicks Electronics Letters 44 (25), 1487-1488, 2008	94	2008
GaInAs‐AlInAs structures grown by molecular beam epitaxy H Ohno, CEC Wood, L Rathbun, DV Morgan, GW Wicks, LF Eastman Journal of Applied Physics 52 (6), 4033-4037, 1981	94	1981

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