Jan Gluschke
Jan Gluschke
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Large thermoelectric power factor enhancement observed in InAs nanowires
PM Wu, J Gooth, X Zianni, SF Svensson, JG Gluschke, KA Dick, ...
Nano letters 13 (9), 4080-4086, 2013
Thermoelectric performance of classical topological insulator nanowires
J Gooth, JG Gluschke, R Zierold, M Leijnse, H Linke, K Nielsch
Semiconductor Science and Technology 30 (1), 015015, 2014
InAs nanowire transistors with multiple, independent wrap-gate segments
AM Burke, DJ Carrad, JG Gluschke, K Storm, S Fahlvik Svensson, H Linke, ...
Nano letters 15 (5), 2836-2843, 2015
Regaining a spatial dimension: Mechanically transferrable two-dimensional inas nanofins grown by selective area epitaxy
J Seidl, JG Gluschke, X Yuan, S Naureen, N Shahid, HH Tan, C Jagadish, ...
Nano Letters 19 (7), 4666-4677, 2019
Gate voltage induced phase transition in magnetite nanowires
J Gooth, R Zierold, JG Gluschke, T Boehnert, S Edinger, S Barth, ...
Applied Physics Letters 102 (7), 2013
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
JG Gluschke, J Seidl, AM Burke, RW Lyttleton, DJ Carrad, AR Ullah, ...
Nanotechnology 30 (6), 064001, 2018
Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studies
JG Gluschke, SF Svensson, C Thelander, H Linke
Nanotechnology 25 (38), 385704, 2014
P-GaAs nanowire metal–semiconductor field-effect transistors with near-thermal limit gating
AR Ullah, F Meyer, JG Gluschke, S Naureen, P Caroff, P Krogstrup, ...
Nano Letters 18 (9), 5673-5680, 2018
Using ultrathin parylene films as an organic gate insulator in nanowire field-effect transistors
JG Gluschke, J Seidl, RW Lyttleton, DJ Carrad, JW Cochrane, S Lehmann, ...
Nano letters 18 (7), 4431-4439, 2018
A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications
JG Gluschke, F Richter, AP Micolich
Review of Scientific Instruments 90 (8), 2019
Characterization of ambipolar GaSb/InAs core–shell nanowires by thermovoltage measurements
JG Gluschke, M Leijnse, B Ganjipour, KA Dick, H Linke, C Thelander
Acs Nano 9 (7), 7033-7040, 2015
Towards low-dimensional hole systems in Be-doped GaAs nanowires
AR Ullah, JG Gluschke, P Krogstrup, CB Sørensen, J Nygård, AP Micolich
Nanotechnology 28 (13), 134005, 2017
Multi-Redox Responsive Behavior in a Mixed-Valence Semiconducting Framework Based on Bis-[1, 2, 5]-thiadiazolo-tetracyanoquinodimethane
R Murase, TA Hudson, TS Aldershof, KV Nguyen, JG Gluschke, EP Kenny, ...
Journal of the American Chemical Society 144 (29), 13242-13253, 2022
Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion
JG Gluschke, J Seidl, RW Lyttleton, K Nguyen, M Lagier, F Meyer, ...
Materials Horizons 8 (1), 224-233, 2021
Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors
S Yin, JG Gluschke, AP Micolich, J Nathawat, B Barut, R Dixit, ...
ACS Applied Electronic Materials 1 (11), 2260-2267, 2019
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
JG Gluschke, J Seidl, HH Tan, C Jagadish, P Caroff, AP Micolich
Nanoscale 12 (39), 20317-20325, 2020
Systematic in situ hydration neutron reflectometry study on Nafion thin films
H Cavaye, RJL Welbourn, JG Gluschke, P Hughes, KV Nguyen, ...
Physical Chemistry Chemical Physics 24 (46), 28554-28563, 2022
Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins
J Seidl, JG Gluschke, X Yuan, HH Tan, C Jagadish, P Caroff, AP Micolich
ACS nano 15 (4), 7226-7236, 2021
Magnetotransport and thermopower of single Bi0.92Sb0.08 nanowires
S Heiderich, W Toellner, T Boehnert, JG Gluschke, S Zastrow, ...
physica status solidi (RRL)–Rapid Research Letters 7 (10), 898-902, 2013
Kinetics of the charge ordering in magnetite below the Verwey temperature
J Gooth, T Böhnert, JG Gluschke, B Hamdou, S Barth, D Görlitz, R Zierold, ...
Journal of Physics: Condensed Matter 26 (47), 472202, 2014
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