William Vandenberghe

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Massimo V FischettiThe University of Texas at DallasPotvrđena adresa e-pošte na utdallas.edu
Bart SoreePrincipal scientist @ imec and part-time professor University Antwerp & KULeuvenPotvrđena adresa e-pošte na imec.be
Maarten Van de PutimecPotvrđena adresa e-pošte na imec.be
Anne S VerhulstPrincipal Member of Technical Staff, imec, BelgiumPotvrđena adresa e-pošte na imec.be
Guido Groesenekenimec and KU LeuvenPotvrđena adresa e-pošte na imec.be
Akash LaturiaGraduate Research Assistant, MSEN, The University of Texas at DallasPotvrđena adresa e-pošte na utdallas.edu
Christopher HinkleUniversity of Notre Dame, Electrical EngineeringPotvrđena adresa e-pošte na nd.edu
Gautam GaddemaneimecPotvrđena adresa e-pošte na imec.be
Jingtian FangSynopsys Inc.Potvrđena adresa e-pošte na synopsys.com
Robert M. WallaceUniversity of Texas at DallasPotvrđena adresa e-pošte na utdallas.edu
Ali SaadatUniversity of Texas at DallasPotvrđena adresa e-pošte na utdallas.edu
Devin Verreckimec, LeuvenPotvrđena adresa e-pošte na imec.be
Henry L. (Hal) EdwardsTI Fellow at Texas InstrumentsPotvrđena adresa e-pošte na ti.com
Rafik AddouOregon State UniversityPotvrđena adresa e-pošte na oregonstate.edu
Quentin SmetsimecPotvrđena adresa e-pošte na imec.be
Yifan NieLawrence Berkeley National Laboratory, Synopsys Inc.Potvrđena adresa e-pošte na lbl.gov
Julia W.P. HsuUniversity of Texas at DallasPotvrđena adresa e-pošte na mailaps.org
geoffrey pourtoisimecPotvrđena adresa e-pošte na imec.be
Manuel Quevedo-lopezUniversity of Texas at DallasPotvrđena adresa e-pošte na utdallas.edu
Sabyasachi TiwariThe University of Texas at AustinPotvrđena adresa e-pošte na utdallas.edu

Prati

William Vandenberghe

Associate Professor at U.T. Dallas, dept. Materials Science & Engineering

Potvrđena adresa e-pošte na utdallas.edu - Početna stranica

Theoretical Nanoelectronics DFT transport TCAD


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk A Laturia, ML Van de Put, WG Vandenberghe npj 2D Materials and Applications 2 (1), 6, 2018	510	2018
Tunnel field-effect transistor without gate-drain overlap AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken Applied Physics Letters 91 (5), 053102, 2007	443	2007
Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs KH Kao, AS Verhulst, WG Vandenberghe, B Sorée, G Groeseneken, ... Electron Devices, IEEE Transactions on 59 (2), 292-301, 2011	422	2011
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken Journal of Applied Physics 107 (2), 024518, 2010	258	2010
Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ... IEEE electron device letters 29 (12), 1398-1401, 2008	203	2008
Boosting the on-current of a -channel nanowire tunnel field-effect transistor by source material optimization AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken Journal of Applied Physics 104 (6), 064514, 2008	159	2008
Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe₂ and W_xMo_1–xTe₂ Alloy C Zhang, S Kc, Y Nie, C Liang, WG Vandenberghe, RC Longo, Y Zheng, ... ACS nano 10 (8), 7370-7375, 2016	136	2016
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets KH Kao, AS Verhulst, WG Vandenberghe, B Soree, W Magnus, D Leonelli, ... IEEE Transactions on Electron Devices 59 (8), 2070-2077, 2012	130	2012
Figure of merit for and identification of sub-60 mV/decade devices WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ... Applied Physics Letters 102, 013510, 2013	114	2013
Impact of field-induced quantum confinement in tunneling field-effect devices WG Vandenberghe, B Sorée, W Magnus, G Groeseneken, MV Fischetti Applied Physics Letters 98 (14), 143503, 2011	107	2011
A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance RM Imenabadi, M Saremi, WG Vandenberghe IEEE transactions on electron devices 64 (11), 4752-4758, 2017	102	2017
Analytical model for a tunnel field-effect transistor WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008	102	2008
Analytical model for point and line tunneling in a tunnel field-effect transistor W Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus 2008 international conference on simulation of semiconductor processes and …, 2008	98	2008
Mermin-Wagner theorem, flexural modes, and degraded carrier mobility in two-dimensional crystals with broken horizontal mirror symmetry MV Fischetti, WG Vandenberghe Physical Review B 93 (15), 155413, 2016	83	2016
Tunnel field-effect transistor with gated tunnel barrier WG Vandenberghe, AS Verhulst US Patent 8,120,115, 2012	75	2012
Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview G Gaddemane, WG Vandenberghe, ML Van de Put, S Chen, S Tiwari, ... Physical Review B 98 (11), 115416, 2018	71	2018
Imperfect two-dimensional topological insulator field-effect transistors WG Vandenberghe, MV Fischetti Nature communications 8 (1), 14184, 2017	71	2017
Advanced physics of electron transport in semiconductors and nanostructures MV Fischetti, WG Vandenberghe Springer, 2016	67	2016
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach W Vandenberghe, B Sorée, W Magnus, MV Fischetti Journal of Applied Physics 109 (12), 124503, 2011	65	2011
Quantum mechanical performance predictions of pnin versus pocketed line tunnel field-effect transistors D Verreck, AS Verhulst, KH Kao, WG Vandenberghe, K De Meyer, ... IEEE transactions on electron devices 60 (7), 2128-2134, 2013	64	2013

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