| An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET H Kaur, S Kabra, S Haldar, RS Gupta Microelectronics Journal 38 (3), 352-359, 2007 | 59 | 2007 |
| Impact of graded channel (GC) design in fully depleted cylindrical/surrounding gate MOSFET (FD CGT/SGT) for improved short channel immunity and hot carrier reliability H Kaur, S Kabra, S Bindra, S Haldar, RS Gupta Solid-state electronics 51 (3), 398-404, 2007 | 59 | 2007 |
| An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET H Kaur, S Kabra, S Haldar, RS Gupta Solid-state electronics 52 (2), 305-311, 2008 | 36 | 2008 |
| Modeling and simulation study of novel Double Gate Ferroelectric Junctionless (DGFJL) transistor H Mehta, H Kaur Superlattices and microstructures 97, 536-547, 2016 | 35 | 2016 |
| Impact of Gaussian doping profile and negative capacitance effect on double-gate junctionless transistors (DGJLTs) H Mehta, H Kaur IEEE Transactions on Electron Devices 65 (7), 2699-2706, 2018 | 33 | 2018 |
| Two-dimensional subthreshold analysis of sub-micron GaN MESFET S Kabra, H Kaur, S Haldar, M Gupta, RS Gupta Microelectronics journal 38 (4-5), 547-555, 2007 | 29 | 2007 |
| Temperature dependent analytical model of sub-micron GaN MESFETs for microwave frequency applications S Kabra, H Kaur, S Haldar, M Gupta, RS Gupta Solid-state electronics 52 (1), 25-30, 2008 | 25 | 2008 |
| Study on impact of parasitic capacitance on performance of graded channel negative capacitance SOI FET at high temperature H Mehta, H Kaur IEEE Transactions on Electron Devices 66 (7), 2904-2909, 2019 | 22 | 2019 |
| Analysis of negative-capacitance germanium finfet with the presence of fixed trap charges M Bansal, H Kaur IEEE Transactions on Electron Devices 66 (4), 1979-1984, 2019 | 20 | 2019 |
| A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications S Kabra, H Kaur, R Gupta, S Haldar, M Gupta, RS Gupta Microelectronics journal 37 (7), 620-626, 2006 | 20 | 2006 |
| Improved temperature resilience and device performance of negative capacitance reconfigurable field effect transistors P Pandey, H Kaur IEEE Transactions on Electron Devices 67 (2), 738-744, 2020 | 11 | 2020 |
| High temperature performance of Si: HfO2 based long channel double gate ferroelectric junctionless transistors H Mehta, H Kaur Superlattices and Microstructures 103, 78-84, 2017 | 11 | 2017 |
| Impact of negative capacitance effect on germanium double gate pFET for enhanced immunity to interface trap charges M Bansal, H Kaur Superlattices and Microstructures 117, 189-199, 2018 | 10 | 2018 |
| Performance and sensitivity analysis of polarity controllable-ion sensitive FET for pH sensing applications P Pandey, H Kaur Silicon 14 (14), 8467-8474, 2022 | 8 | 2022 |
| Implementing variable doping and work function engineering in β-Ga2O3 MOSFET to realize high breakdown voltage and PfoM P Goyal, H Kaur Semiconductor Science and Technology 37 (4), 045018, 2022 | 8 | 2022 |
| Subthreshold analytical model for dual-material double gate ferroelectric field effect transistor (DMGFeFET) H Mehta, H Kaur Semiconductor Science and Technology 34 (6), 065008, 2019 | 8 | 2019 |
| An analytical model for GaN MESFET's using new velocity‐field dependence S Kabra, H Kaur, S Haldar, M Gupta, RS Gupta physica status solidi c 3 (6), 2350-2355, 2006 | 8 | 2006 |
| Superior performance and reliability of double gate Gaussian doped negative capacitance junctionless transistor for 200–500 K H Mehta, H Kaur IETE Technical Review 37 (4), 391-401, 2020 | 7 | 2020 |
| Performance assessment of symmetric double gate negative capacitance junctionless transistor with high-k spacer at elevated temperatures H Mehta, H Kaur Advances in Natural Sciences: Nanoscience and Nanotechnology 10 (3), 035013, 2019 | 7 | 2019 |
| Impact of interface layer and metal workfunction on device performance of ferroelectric junctionless cylindrical surrounding gate transistors H Mehta, H Kaur Superlattices and Microstructures 111, 194-205, 2017 | 5 | 2017 |
