Yuxuan Zhang
Yuxuan Zhang
Finwave Semiconductor Inc.
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High-temperature low-pressure chemical vapor deposition of β-Ga2O3
Y Zhang, Z Feng, MR Karim, H Zhao
Journal of Vacuum Science & Technology A 38 (5), 2020
Effects of silane coupling agents on the electrical properties of silica/epoxy nanocomposites
H Li, C Wang, Z Guo, H Wang, Y Zhang, R Hong, Z Peng
2016 IEEE international conference on dielectrics (ICD) 2, 1036-1039, 2016
Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
Y Zhang, Z Chen, W Li, H Lee, MR Karim, AR Arehart, SA Ringel, S Rajan, ...
Journal of Applied Physics 127 (21), 2020
Design and fabrication of vertical GaN pn diode with step-etched triple-zone junction termination extension
HS Lee, Y Zhang, Z Chen, MW Rahman, H Zhao, S Rajan
IEEE Transactions on Electron Devices 67 (9), 3553-3557, 2020
Laser‐assisted metal–organic chemical vapor deposition of gallium nitride
Y Zhang, Z Chen, K Zhang, Z Feng, H Zhao
physica status solidi (RRL)–Rapid Research Letters 15 (6), 2100202, 2021
Metalorganic chemical vapor deposition gallium nitride with fast growth rate for vertical power device applications
Y Zhang, Z Chen, W Li, AR Arehart, SA Ringel, H Zhao
physica status solidi (a) 218 (6), 2000469, 2021
Improvement of the standard characterization method on k33 mode piezoelectric specimens
Y Park, Y Zhang, M Majzoubi, T Scholehwar, E Hennig, K Uchino
Sensors and Actuators A: Physical 312, 112124, 2020
Study on electrical properties and thermal conductivity of carbon nanotube/epoxy resin nanocomposites with different filler aspect ratios
Y Zhang, H Li, P Liu, Z Peng
2016 IEEE International Conference on High Voltage Engineering and …, 2016
Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3
M Stokey, R Korlacki, S Knight, A Ruder, M Hilfiker, Z Galazka, K Irmscher, ...
Journal of Applied Physics 129 (22), 2021
Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate
V Talesara, Y Zhang, Z Chen, H Zhao, W Lu
Journal of Materials Research 36, 4919-4926, 2021
Analytical modeling of k33 mode partial electrode configuration for loss characterization
Y Park, M Majzoubi, Y Zhang, T Scholehwar, E Hennig, K Uchino
Journal of Applied Physics 127 (20), 2020
Ultrafast growth rate and high mobility In2O3 films grown on c-sapphire via low pressure chemical vapor deposition
Y Zhang, MR Karim, Z Feng, H Zhao
Journal of Applied Physics 125 (13), 2019
Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2
V Talesara, Y Zhang, VGT Vangipuram, H Zhao, W Lu
Applied Physics Letters 122 (12), 2023
Investigation of carbon incorporation in laser-assisted MOCVD of GaN
Y Zhang, VG Thirupakuzi Vangipuram, K Zhang, H Zhao
Applied Physics Letters 122 (16), 2023
GaN Power p–n Diodes on Hydride Vapor Epitaxy GaN Substrates with Near‐Unity Ideality Factor and <0.5 mΩ cm2 Specific On‐Resistance
V Talesara, Y Zhang, Z Chen, H Zhao, W Lu
physica status solidi (RRL)–Rapid Research Letters 16 (4), 2100599, 2022
Detailed investigation of MOCVD-grown [beta]-Ga2O3 through quantitative defect spectroscopies
H Ghadi, JF McGlone, Z Feng, AFMAU Bhuiyan, Y Zhang, H Zhao, ...
Oxide-based Materials and Devices XII 11687, 31-37, 2021
Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3
H Ghadi, JF McGlone, E Cornuelle, Z Feng, Y Zhang, L Meng, H Zhao, ...
APL Materials 10 (10), 2022
Quantitative defect analysis in MOCVD GaN-on-GaN using cathodoluminescence
Z Chen, Y Zhang, H Zhao
Optics Express 28 (18), 26651-26660, 2020
Influence of grafting modification on dielectric properties of epoxy-grafted SiO2/Epoxy composites
H Li, C Wang, Y Zhang, Z Guo, H Wang, Z Peng
2016 IEEE International Conference on High Voltage Engineering and …, 2016
7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management
Y Xu, VGT Vangipuram, V Telasara, J Cheng, Y Zhang, T Hashimoto, ...
arXiv preprint arXiv:2303.15646, 2023
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