| Progress and challenges towards terahertz CMOS integrated circuits E Seok, D Shim, C Mao, R Han, S Sankaran, C Cao, W Knap IEEE Journal of Solid-State Circuits 45 (8), 1554-1564, 2010 | 176 | 2010 |
| Schottky barrier diodes for millimeter wave detection in a foundry CMOS process S Sankaran, O KK IEEE Electron device letters 26 (7), 492-494, 2005 | 171 | 2005 |
| Integrated artificial magnetic launch surface for near field communication system N Brooks, BS Cook, S Sankaran, BA Kramer, MW Morgan, BS Haroun US Patent 10,389,410, 2019 | 86 | 2019 |
| Guided near field communication for short range data communication S Sankaran, BA Kramer, BS Cook, JA Herbsommer, L Naumann, ... US Patent 10,027,376, 2018 | 86 | 2018 |
| Tapered coax launch structure for a near field communication system BS Cook, N Brooks, S Sankaran, BA Kramer, MW Morgan, B Haroun US Patent 10,171,578, 2019 | 85 | 2019 |
| Staggered back-to-back launch topology with diagonal waveguides for field confined near field communication system S Sankaran, BS Cook, N Brooks, BA Kramer, MW Morgan, B Haroun US Patent 10,425,793, 2019 | 84 | 2019 |
| Launch topology for field confined near field communication system BS Cook, N Brooks, S Sankaran, BA Kramer, MW Morgan, B Haroun US Patent 10,461,810, 2019 | 83 | 2019 |
| A 160 GHz pulsed radar transceiver in 65 nm CMOS BP Ginsburg, SM Ramaswamy, V Rentala, E Seok, S Sankaran, B Haroun IEEE Journal of Solid-State Circuits 49 (4), 984-995, 2014 | 74 | 2014 |
| 125-GHz Diode Frequency Doubler in 0.13- CMOS C Mao, CS Nallani, S Sankaran, E Seok IEEE journal of solid-state circuits 44 (5), 1531-1538, 2009 | 68 | 2009 |
| Towards terahertz operation of CMOS S Sankaran, C Mao, E Seok, D Shim, C Cao, R Han, DJ Arenas, ... 2009 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2009 | 61 | 2009 |
| A fully integrated 2× 2 b/g and 1× 2 a-band MIMO WLAN SoC in 45nm CMOS for multi-radio IC R Kumar, T Krishnaswamy, G Rajendran, D Sahu, A Sivadas, ... 2013 IEEE International Solid-State Circuits Conference Digest of Technical …, 2013 | 43 | 2013 |
| Schottky diode with cutoff frequency of 400 GHz fabricated in 0.18 µm CMOS S Sankaran, O KK Electronics letters 41 (8), 506-508, 2005 | 39 | 2005 |
| CMOS terahertz receivers Q Zhong, WY Choi, DY Kim, Z Ahmad, R Xu, Y Zhang, R Han, S Kshattry, ... 2018 IEEE Custom Integrated Circuits Conference (CICC), 1-8, 2018 | 33 | 2018 |
| 150 GHz complementary anti-parallel diode frequency tripler in 130 nm CMOS D Shim, C Mao, S Sankaran IEEE Microwave and Wireless Components Letters 21 (1), 43-45, 2011 | 30 | 2011 |
| Complementary Antiparallel Schottky Barrier Diode Pair in a 0.13- Logic CMOS Technology D Shim, S Sankaran IEEE electron device letters 29 (6), 606-608, 2008 | 29 | 2008 |
| A millimeter-wave Schottky diode detector in 130-nm CMOS technology E Seok, C Cao, S Sankaran 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers., 142-143, 2006 | 29 | 2006 |
| A ultra-wideband amplitude modulation (AM) detector using Schottky barrier diodes fabricated in foundry CMOS technology S Sankaran IEEE journal of solid-state circuits 42 (5), 1058-1064, 2007 | 25 | 2007 |
| Millimeter wave varistor mode schottky diode frequency doubler in CMOS C Mao, S Sankaran, E Seok, CS Nallani IEEE microwave and wireless components letters 19 (3), 173-175, 2009 | 24 | 2009 |
| An ultra low power, reconfigurable, multi-standard transceiver using fully digital PLL S Chakraborty, V Parikh, S Sankaran, T Motos, O Fikstvedt, JT Marienborg, ... 2013 Symposium on VLSI Circuits, C148-C149, 2013 | 22 | 2013 |
| Galvanic isolator B Bhamidipati, S Sankaran, MW Morgan, GE Howard, BA Kramer US Patent 9,496,926, 2016 | 20 | 2016 |
Baher HarounTexas Instruments Senior Fellow, FIEEEVerified email at ti.com
