| A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View JY Seok, SJ Song, JH Yoon, KJ Yoon, TH Park, DE Kwon, H Lim, GH Kim, ... Advanced Functional Materials 24 (34), 5316-5339, 2014 | 393 | 2014 |
| Leaky integrate-and-fire neuron circuit based on floating-gate integrator V Kornijcuk, H Lim, JY Seok, G Kim, SK Kim, I Kim, BJ Choi, DS Jeong Frontiers in neuroscience 10, 2016 | 77 | 2016 |
| Reliability of neuronal information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons: a model study H Lim, V Kornijcuk, JY Seok, SK Kim, I Kim, CS Hwang, DS Jeong Scientific reports 5, 9776, 2015 | 65 | 2015 |
| Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold H Lim, I Kim, JS Kim, CS Hwang, DS Jeong Nanotechnology 24 (38), 384005, 2013 | 51 | 2013 |
| Relaxation oscillator-realized artificial electronic neurons, their responses, and noise H Lim, HW Ahn, V Kornijcuk, G Kim, JY Seok, I Kim, CS Hwang, DS Jeong Nanoscale 8 (18), 9629-9640, 2016 | 50 | 2016 |
| Threshold resistive and capacitive switching behavior in binary amorphous GeSe DS Jeong, H Lim, GH Park, CS Hwang, S Lee, B Cheong Journal of Applied Physics 111 (10), 102807, 2012 | 43 | 2012 |
| A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt HW Ahn, DS Jeong, B Cheong, S Kim, SY Shin, H Lim, D Kim, S Lee ECS Solid State Letters 2 (9), N31-N33, 2013 | 37 | 2013 |
| Electric-field-induced Shift in the Threshold Voltage in LaAlO3/SrTiO3 Heterostructures SK Kim, SI Kim, H Lim, DS Jeong, B Kwon, SH Baek, JS Kim Scientific reports 5, 2015 | 24 | 2015 |
| Multiprotocol-induced plasticity in artificial synapses V Kornijcuk, O Kavehei, H Lim, JY Seok, SK Kim, I Kim, WS Lee, BJ Choi, ... Nanoscale 6 (24), 15151-15160, 2014 | 22 | 2014 |
| Elastic resistance change and action potential generation of non-faradaic Pt/TiO 2/Pt capacitors H Lim, HW Jang, DK Lee, I Kim, CS Hwang, DS Jeong Nanoscale 5 (14), 6363-6371, 2013 | 18 | 2013 |
| Structural and optical properties of phase‐change amorphous and crystalline Ge1− xTex (0< x< 1) thin films JW Park, M Song, S Yoon, H Lim, DS Jeong, B Cheong, H Lee physica status solidi (a) 210 (2), 267-275, 2013 | 17 | 2013 |
| Scalable excitatory synaptic circuit design using floating gate based leaky integrators V Kornijcuk, H Lim, I Kim, JK Park, WS Lee, JH Choi, BJ Choi, DS Jeong Scientific reports 7 (1), 17579, 2017 | 7 | 2017 |
| Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours H Lim, R Soni, D Kim, G Kim, V Kornijcuk, I Kim, JK Park, CS Hwang, ... Nanoscale 8 (34), 15621-15628, 2016 | 6 | 2016 |
| Dc current transport behavior in amorphous GeSe films DS Jeong, GH Park, H Lim, CS Hwang, S Lee, B Cheong Applied Physics A: Materials Science & Processing 102 (4), 1027-1032, 2011 | 6 | 2011 |
| The electrical characteristics of GeTe thin films with various Se contents for switching deivces G Park, SH Son, H Lim, DS Jeong, S Lee, B Cheong 한국진공학회 학술발표회초록집, 130-130, 2011 | | 2011 |
| Pad-size Dependence of dc and ac Conduction Behavior of GeSe Thin Film H Lim, GH Park, B Cheong, CS Hwang, DS Jeong 한국진공학회 학술발표회초록집, 131-131, 2011 | | 2011 |
