Prati
David Biegelsen
David Biegelsen
Xerox Palo Alto Research Center
Potvrđena adresa e-pošte na parc.com
Naslov
Citirano
Citirano
Godina
Surface reconstructions of GaAs (100) observed by scanning tunneling microscopy
DK Biegelsen, RD Bringans, JE Northrup, LE Swartz
Physical Review B 41 (9), 5701, 1990
1140*1990
Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution
EH Poindexter, GJ Gerardi, ME Rueckel, PJ Caplan, NM Johnson, ...
Journal of applied physics 56 (10), 2844-2849, 1984
4741984
Luminescence studies of plasma-deposited hydrogenated silicon
RA Street, JC Knights, DK Biegelsen
Physical Review B 18 (4), 1880, 1978
4121978
Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires
HI Liu, DK Biegelsen, FA Ponce, NM Johnson, RFW Pease
Applied physics letters 64 (11), 1383-1385, 1994
3931994
Detailed investigation of doping in hydrogenated amorphous silicon and germanium
M Stutzmann, DK Biegelsen, RA Street
Physical Review B 35 (11), 5666, 1987
3691987
Silicon surface passivation by hydrogen termination: A comparative study of preparation methods
DB Fenner, DK Biegelsen, RD Bringans
Journal of Applied Physics 66 (1), 419-424, 1989
3671989
Defect states in doped and compensated a-Si: H
RA Street, DK Biegelsen, JC Knights
Physical Review B 24 (2), 969, 1981
3301981
Apparatus and method for using electrostatic force to cause fluid movement
SA Elrod, E Peeters, FE Torres, DK Biegelsen, JL Dunec, AG Bell
US Patent 7,147,763, 2006
3282006
Stretchable interconnects using stress gradient films
DK Biegelsen, D Fork, J Reich
US Patent 6,743,982, 2004
3172004
Deuterium passivation of grain‐boundary dangling bonds in silicon thin films
NM Johnson, DK Biegelsen, MD Moyer
Applied Physics Letters 40 (10), 882-884, 1982
3041982
Density of gap states of silicon grain boundaries determined by optical absorption
WB Jackson, NM Johnson, DK Biegelsen
Applied Physics Letters 43 (2), 195-197, 1983
2941983
Hydrogen evolution and defect creation in amorphous Si: H alloys
DK Biegelsen, RA Street, CC Tsai, JC Knights
Physical Review B 20 (12), 4839, 1979
2931979
Characteristic electronic defects at the Si‐SiO2 interface
NM Johnson, DK Biegelsen, MD Moyer, ST Chang, EH Poindexter, ...
Applied Physics Letters 43 (6), 563-565, 1983
2401983
Photoinduced defects in chalcogenide glasses
DK Biegelsen, RA Street
Physical Review Letters 44 (12), 803, 1980
2301980
Self‐limiting oxidation of Si nanowires
HI Liu, DK Biegelsen, NM Johnson, FA Ponce, RFW Pease
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
2191993
Luminescence and ESR studies of defects in hydrogenated amorphous silicon
RA Street, DK Biegelsen
Solid State Communications 33 (12), 1159-1162, 1980
2191980
Initial stages of epitaxial growth of GaAs on (100) silicon
DK Biegelsen, FA Ponce, AJ Smith, JC Tramontana
Journal of applied physics 61 (5), 1856-1859, 1987
1951987
Microdevice valve structures to fluid control
DK Biegelsen, WB Jackson, PCP Cheung, MH Yim, AA Berlin
US Patent 5,971,355, 1999
1881999
Media path modules
DK Biegelsen, LE Swartz, MPJ Fromherz, MH Yim
US Patent 7,093,831, 2006
1712006
Hyperfine studies of dangling bonds in amorphous silicon
DK Biegelsen, M Stutzmann
Physical Review B 33 (5), 3006, 1986
1711986
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