Kunal Mukherjee
Kunal Mukherjee
Materials Science and Engineering, Stanford University
Verified email at - Homepage
Cited by
Cited by
Electron transport in electrospun TiO2 nanofiber dye-sensitized solar cells
K Mukherjee, TH Teng, R Jose, S Ramakrishna
Applied Physics Letters 95 (1), 2009
Low threading dislocation density GaAs growth on on-axis GaP/Si (001)
D Jung, PG Callahan, B Shin, K Mukherjee, AC Gossard, JE Bowers
Journal of Applied Physics 122 (22), 2017
III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template
Y Hu, D Liang, K Mukherjee, Y Li, C Zhang, G Kurczveil, X Huang, ...
Light: Science & Applications 8 (1), 93, 2019
High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters
C Shang, E Hughes, Y Wan, M Dumont, R Koscica, J Selvidge, R Herrick, ...
Optica 8 (5), 749-754, 2021
Perspectives on advances in quantum dot lasers and integration with Si photonic integrated circuits
C Shang, Y Wan, J Selvidge, E Hughes, R Herrick, K Mukherjee, J Duan, ...
ACS photonics 8 (9), 2555-2566, 2021
A Pathway to Thin GaAs Virtual Substrate on On‐Axis Si (001) with Ultralow Threading Dislocation Density
C Shang, J Selvidge, E Hughes, JC Norman, AA Taylor, AC Gossard, ...
physica status solidi (a) 218 (3), 2000402, 2021
Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon
J Selvidge, J Norman, ET Hughes, C Shang, D Jung, AA Taylor, ...
Applied Physics Letters 117 (12), 2020
Recent advances in inas quantum dot lasers grown on on‐axis (001) silicon by molecular beam epitaxy
D Jung, J Norman, Y Wan, S Liu, R Herrick, J Selvidge, K Mukherjee, ...
physica status solidi (a) 216 (1), 1800602, 2019
Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon
PG Callahan, BB Haidet, D Jung, GGE Seward, K Mukherjee
Physical Review Materials 2 (8), 081601, 2018
Non-radiative recombination at dislocations in InAs quantum dots grown on silicon
J Selvidge, J Norman, ME Salmon, ET Hughes, JE Bowers, R Herrick, ...
Applied Physics Letters 115 (13), 2019
Amber-green light-emitting diodes using order-disorder AlxIn1− xP heterostructures
TM Christian, DA Beaton, K Mukherjee, K Alberi, EA Fitzgerald, ...
Journal of Applied Physics 114 (7), 2013
Phase stability and diffusion in lateral heterostructures of methyl ammonium lead halide perovskites
RM Kennard, CJ Dahlman, H Nakayama, RA DeCrescent, JA Schuller, ...
ACS Applied Materials & Interfaces 11 (28), 25313-25321, 2019
Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates
K Mukherjee, DA Beaton, T Christian, EJ Jones, K Alberi, A Mascarenhas, ...
Journal of applied physics 113 (18), 2013
Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures
J Selvidge, ET Hughes, JC Norman, C Shang, MJ Kennedy, M Dumont, ...
Applied Physics Letters 118 (19), 2021
Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon
K Mukherjee, J Selvidge, D Jung, J Norman, AA Taylor, M Salmon, AY Liu, ...
Journal of Applied Physics 128 (2), 2020
Fast diffusion and segregation along threading dislocations in semiconductor heterostructures
B Bonef, RD Shah, K Mukherjee
Nano Letters 19 (3), 1428-1436, 2019
Growth and Magnetotransport in Thin‐Film α‐Sn on CdTe
O Vail, P Taylor, P Folkes, B Nichols, B Haidet, K Mukherjee, G de Coster
physica status solidi (b) 257 (1), 1800513, 2020
Interface structure and luminescence properties of epitaxial PbSe films on InAs (111) A
BB Haidet, L Nordin, AJ Muhowski, KD Vallejo, ET Hughes, J Meyer, ...
Journal of Vacuum Science & Technology A 39 (2), 2021
Nucleation control and interface structure of rocksalt PbSe on (001) zincblende III-V surfaces
BB Haidet, ET Hughes, K Mukherjee
Physical Review Materials 4 (3), 033402, 2020
Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence
K Mukherjee, AG Norman, AJ Akey, T Buonassisi, EA Fitzgerald
Journal of Applied Physics 118 (11), 2015
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