| ASM GaN: Industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model S Khandelwal, YS Chauhan, TA Fjeldly, S Ghosh, A Pampori, D Mahajan, ... IEEE Transactions on Electron Devices 66 (1), 80-86, 2018 | 116 | 2018 |
| A computationally efficient compact model for ferroelectric switching with asymmetric non-periodic input signals AD Gaidhane, R Dangi, S Sahay, A Verma, YS Chauhan IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2022 | 14 | 2022 |
| Modeling of bias-dependent effective velocity and its impact on saturation transconductance in AlGaN/GaN HEMTs AUH Pampori, SA Ahsan, R Dangi, U Goyal, SK Tomar, M Mishra, ... IEEE Transactions on Electron Devices 68 (7), 3302-3307, 2021 | 10 | 2021 |
| A computationally efficient compact model for ferroelectric FinFETs switching with asymmetric non-periodic input signals S Sahay, A Gaidhane, YS Chauhan, R Dangi, A Verma Authorea Preprints, 2023 | 5 | 2023 |
| S-band gan based power amplifier with symmetric matching network M Zaid, A Pampori, R Dangi, YS Chauhan 2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical …, 2022 | 5 | 2022 |
| A width-scalable SPICE compact model for GaN HEMTs including self-heating effect R Dangi, A Pampori, P Kushwaha, E Yadav, S Sinha, YS Chauhan 2022 Device Research Conference (DRC), 1-2, 2022 | 4 | 2022 |
| A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications MH Ansari, R Dangi, A Pampori, P Kushwaha, E Yadav, S Sinha, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 1 | 2023 |
| A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With off-State Harmonic Control A Pampori, MS Nazir, R Dangi, ML Chou, GY Lee, YS Chauhan IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT R Dangi, A Pampori, P Pal, YS Chauhan IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Charge-based Flicker Noise Modeling of GaN HEMTs down to Cryogenic Temperatures MS Nazir, AH Pampori, R Dangi, SA Ahsan, YS Chauhan IEEE Electron Device Letters, 2023 | | 2023 |
| Characterization and modeling of drain lag using a modified RC network in the ASM-HEMT framework MS Nazir, A Pampori, R Dangi, P Kushwaha, E Yadav, S Sinha, ... Solid-State Electronics 199, 108490, 2023 | | 2023 |
| A Turnkey Large-Signal Model for Amplifier Design in 5G Spectra using AlGaN/GaN HEMTs YS Chauhan, A Pampori, R Dangi, P Kushwaha, E Yadav, S Sinha 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022 | | 2022 |
| ASM-HEMT: industry standard GaN HEMT model for power and RF applications S Ghosh, SA Ahsan, S Khandelwal, A Pampori, R Dangi, YS Chauhan 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly …, 2018 | | 2018 |
| Physics Based Analysis and Modeling of Capacitances in a Dual Field Plated Power GaN HEMT YSC S. Ghosh, S. A. Ahsan, S. Khandelwal, A. Pampori, R. Dangi International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, India, 2017 | | 2017 |
| A Scalable Physics-based RF Large Signal Model for Multi-Finger GaN HEMTs YSC S. A. Ahsan, S. Ghosh, S. Khandelwal, A. Pampori, R. Dangi International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, India, 2017 | | 2017 |
