| True random number generator integration in a resistive RAM memory array using input current limitation H Aziza, J Postel-Pellerin, H Bazzi, P Canet, M Moreau, V Della Marca, ... IEEE Transactions on Nanotechnology 19, 214-222, 2020 | 40 | 2020 |
| Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations A Padovani, L Larcher, V Della Marca, P Pavan, H Park, G Bersuker Journal of applied physics 110 (1), 2011 | 31 | 2011 |
| Temperature effects on metal-alumina-nitride-oxide-silicon memory operations A Padovani, L Larcher, D Heh, G Bersuker, V Della Marca, P Pavan Applied Physics Letters 96 (22), 2010 | 26 | 2010 |
| Scalability of split-gate charge trap memories down to 20nm for low-power embedded memories L Masoero, G Molas, F Brun, M Gély, JP Colonna, V Della Marca, O Cueto, ... 2011 International Electron Devices Meeting, 9.5. 1-9.5. 4, 2011 | 20 | 2011 |
| Investigation of Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications C Sung, A Padovani, B Beltrando, D Lee, M Kwak, S Lim, L Larcher, ... IEEE Journal of The Electron Devices Society 7, 404-408, 2019 | 18 | 2019 |
| Push the flash floating gate memories toward the future low energy application V Della Marca, G Just, A Regnier, JL Ogier, R Simola, S Niel, ... Solid-State Electronics 79, 210-217, 2013 | 17 | 2013 |
| Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations L Larcher, A Padovani, V della Marca, P Pavan, A Bertacchini Proceedings of 2010 International Symposium on VLSI Technology, System and …, 2010 | 16 | 2010 |
| True random number generation exploiting SET voltage variability in resistive RAM memory arrays J Postel-Pellerin, H Bazzi, H Aziza, P Canet, M Moreau, V Della Marca, ... 2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 1-5, 2019 | 15 | 2019 |
| Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories V Della Marca, J Postel-Pellerin, G Just, P Canet, JL Ogier Microelectronics Reliability 54 (9-10), 2262-2265, 2014 | 15 | 2014 |
| Comprehensive phase-change memory compact model for circuit simulation C Pigot, M Bocquet, F Gilibert, M Reyboz, O Cueto, V Della Marca, ... IEEE Transactions on Electron Devices 65 (10), 4282-4289, 2018 | 14 | 2018 |
| Role of holes and electrons during erase of TANOS memories: evidences for dipole formation and its impact on reliability L Vandelli, A Padovani, L Larcher, A Arreghini, M Jurczak, J Van Houdt, ... 2010 IEEE International Reliability Physics Symposium, 731-737, 2010 | 12 | 2010 |
| Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations M Chambonneau, S Souiki-Figuigui, P Chiquet, V Della Marca, ... Applied Physics Letters 110 (16), 2017 | 7 | 2017 |
| Experimental study to push the Flash floating gate memories toward low energy applications V Della Marca, A Regnier, JL Ogier, R Simola, S Niel, J Postel-Pellerin, ... 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 5 | 2011 |
| Energy consumption optimization in nonvolatile silicon nanocrystal memories V Della Marca, J Amouroux, J Delalleau, L Lopez, JL Ogier, ... CAS 2011 Proceedings (2011 International Semiconductor Conference) 2, 339-342, 2011 | 5 | 2011 |
| Real-time switching dynamics in STT-MRAM N Yazigy, J Postel-Pellerin, V Della Marca, K Terziyan, RC Sousa, ... IEEE Journal of the Electron Devices Society 10, 490-494, 2022 | 4 | 2022 |
| Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser P Chiquet, M Chambonneau, V Della Marca, J Postel-Pellerin, P Canet, ... Scientific Reports 9 (1), 7392, 2019 | 4 | 2019 |
| Simulation of the programming efficiency and the energy consumption of Flash memories during endurance degradation J Postel-Pellerin, P Chiquet, V Della Marca 2016 International Semiconductor Conference (CAS), 101-104, 2016 | 4 | 2016 |
| NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests V Della Marca, M Chambonneau, S Souiki-Figuigui, J Postel-Pellerin, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 7B-4-1-7B-4-7, 2016 | 4 | 2016 |
| Physical understanding of program injection and consumption in ultra-scaled SiN Split-Gate memories L Masoero, G Molas, V Della Marca, M Gély, O Cueto, JP Colonna, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 4 | 2012 |
| Experimental analysis on stochastic behavior of preswitching time in STT-MRAM N Yazigy, J Postel-Pellerin, V Della Marca, K Terziyan, S Nadifi, ... Microelectronics Reliability 138, 114677, 2022 | 3 | 2022 |
Jérémy Postel-PellerinIM2NPPotvrđena adresa e-pošte na im2np.fr
