Ingvar Aberg
Ingvar Aberg
Massachusetts Institute of Technology
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InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit
J Wallentin, N Anttu, D Asoli, M Huffman, I Åberg, MH Magnusson, ...
Science 339 (6123), 1057-1060, 2013
Strained silicon MOSFET technology
JL Hoyt, HM Nayfeh, S Eguchi, I Aberg, G Xia, T Drake, EA Fitzgerald, ...
Digest. International Electron Devices Meeting,, 23-26, 2002
A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun
I Åberg, G Vescovi, D Asoli, U Naseem, JP Gilboy, C Sundvall, ...
IEEE Journal of photovoltaics 6 (1), 185-190, 2015
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
DA Antoniadis, I Åberg, CN Chléirigh, OM Nayfeh, A Khakifirooz, JL Hoyt
IBM Journal of Research and Development 50 (4.5), 363-376, 2006
Absorption of light in InP nanowire arrays
N Anttu, A Abrand, D Asoli, M Heurlin, I Åberg, L Samuelson, M Borgström
Nano Research 7, 816-823, 2014
Understanding InP nanowire array solar cell performance by nanoprobe-enabled single nanowire measurements
G Otnes, E Barrigón, C Sundvall, KE Svensson, M Heurlin, G Siefer, ...
Nano letters 18 (5), 3038-3046, 2018
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
SK Lee, CM Zetterling, M Östling, I Åberg, MH Magnusson, K Deppert, ...
Solid-State Electronics 46 (9), 1433-1440, 2002
Towards nanowire tandem junction solar cells on silicon
MT Borgström, MH Magnusson, F Dimroth, G Siefer, O Höhn, H Riel, ...
IEEE Journal of Photovoltaics 8 (3), 733-740, 2018
Electron transport in strained-silicon directly on insulator ultrathin-body n-MOSFETs with body thickness ranging from 2 to 25 nm
L Gomez, I Aberg, JL Hoyt
IEEE electron device letters 28 (4), 285-287, 2007
Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs
I Aberg, CN Chleirigh, JL Hoyt
IEEE transactions on electron devices 53 (5), 1021-1029, 2006
Strain relaxation in patterned strained silicon directly on insulator structures
RZ Lei, W Tsai, I Aberg, TB O’Reilly, JL Hoyt, DA Antoniadis, HI Smith, ...
Applied Physics Letters 87 (25), 2005
High electron and hole mobility enhancements in thin-body strained Si/strained SiGe/strained Si heterostructures on insulator
I Aberg, CN Chléirigh, OO Olubuyide, X Duan, JL Hoyt
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Radiation tolerant nanowire array solar cells
P Espinet-Gonzalez, E Barrigón, G Otnes, G Vescovi, C Mann, RM France, ...
ACS nano 13 (11), 12860-12869, 2019
Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back technique
I Aberg, OO Olubuyide, CN Chléirigh, I Lauer, DA Antoniadis, J Li, R Hull, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 52-53, 2004
Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm
I Aberg, JL Hoyt
IEEE electron device letters 26 (9), 661-663, 2005
A low dark current and high quantum efficiency monolithic germanium-on-silicon CMOS imager technology for day and night imaging applications
I Åberg, B Ackland, JV Beach, C Godek, R Johnson, CA King, A Lattes, ...
2010 International Electron Devices Meeting, 14.4. 1-14.4. 4, 2010
Monolithic germanium SWIR imaging array
C Rafferty, C King, B Ackland, J O'Neill, I Aberg, TS Sriram, A Mackay, ...
2008 IEEE Conference on Technologies for Homeland Security, 577-582, 2008
Nanowire solar cells: a new radiation hard PV technology for space applications
P Espinet-Gonzalez, E Barrigón, Y Chen, G Otnes, G Vescovi, C Mann, ...
IEEE Journal of Photovoltaics 10 (2), 502-507, 2020
IEDM Tech. Dig.
JL Hoyt, HM Nayfeh, SA Eguchi
IEDM Tech. Dig 23, 2002
Performance of GaAs nanowire array solar cells for varying incidence angles
OM Ghahfarokhi, N Anttu, L Samuelson, I Åberg
IEEE Journal of Photovoltaics 6 (6), 1502-1508, 2016
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