Prati
Zheng Xin
Zheng Xin
Potvrđena adresa e-pošte na nus.edu.sg
Naslov
Citirano
Citirano
Godina
Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2
L Zeng, Z Xin, S Chen, G Du, J Kang, X Liu
Applied Physics Letters 103 (11), 2013
752013
Ultra-thin atomic layer deposited aluminium oxide tunnel layer passivated hole-selective contacts for silicon solar cells
Z Xin, ZP Ling, P Wang, J Ge, C Ke, KB Choi, AG Aberle, R Stangl
Solar Energy Materials and Solar Cells 191, 164-174, 2018
442018
Understanding surface treatment and ALD AlOx thickness induced surface passivation quality of c-Si Cz wafers
G Kaur, N Dwivedi, X Zheng, B Liao, LZ Peng, A Danner, R Stangl, ...
IEEE Journal of Photovoltaics 7 (5), 1224-1235, 2017
332017
Phonon-limited electron mobility in single-layer MoS2
L Zeng, Z Xin, SW Chen, G Du, JF Kang, XY Liu
Chinese Physics Letters 31 (2), 027301, 2014
242014
Double-sided passivated contacts for solar cell applications: An industrially viable approach toward 24% efficient large area silicon solar cells
ZP Ling, Z Xin, P Wang, R Sridharan, C Ke, R Stangl
Silicon Materials, 89, 2019
182019
Ultra-thin ALD-AlOx/PEDOT: PSS hole selective passivated contacts: An attractive low cost approach to increase solar cell performance
ZP Ling, Z Xin, G Kaur, C Ke, R Stangl
Solar Energy Materials and Solar Cells 185, 477-486, 2018
182018
An Improved Methodology for Extracting the Interface Defect Density of Passivated Silicon Solar Cells
Z Xin, S Duttagupta, M Tang, Z Qiu, B Liao, AG Aberle, R Stangl
IEEE Journal of Photovoltaics, 2016
182016
Improved silicon oxide/polysilicon passivated contacts for high efficiency solar cells via optimized tunnel layer annealing
G Kaur, Z Xin, T Dutta, R Sridharan, R Stangl, A Danner
Solar Energy Materials and Solar Cells 217, 110720, 2020
162020
Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
Z Xin, ZP Ling, N Nandakumar, G Kaur, C Ke, B Liao, AG Aberle, R Stangl
Japanese Journal of Applied Physics 56, 8S2, 2017
152017
Engineering aluminum oxide/polysilicon hole selective passivated contacts for high efficiency solar cells
G Kaur, Z Xin, R Sridharan, A Danner, R Stangl
Solar Energy Materials and Solar Cells 218, 110758, 2020
142020
Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices
Y Hou, B Chen, B Gao, ZY Lun, Z Xin, R Liu, LF Liu, DD Han, Y Wang, ...
2013 IEEE International Conference of Electron Devices and Solid-state …, 2013
102013
Ultra-thin LPCVD SiNx/n+poly-Si passivated contacts – A possibility?
G Kaur, T Dutta, Z Xin, ZP Ling, MJ Naval, MSM Saifullah, R Stangl, ...
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2679-2683, 2019
92019
Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET
Y Wang, P Huang, Z Xin, L Zeng, X Liu, G Du, J Kang
Japanese Journal of Applied Physics 53 (4S), 04EC05, 2014
92014
Numerical investigation of metal–semiconductor–insulator–semiconductor passivated hole contacts based on atomic layer deposited AlOx
C Ke, Z Xin, ZP Ling, AG Aberle, R Stangl
Japanese Journal of Applied Physics 56 (8S2), 08MB08, 2017
82017
Comparison and characterization of different tunnel layers, suitable for passivated contact formation
ZP Ling, Z Xin, C Ke, KJ Buatis, S Duttagupta, JS Lee, A Lai, A Hsu, ...
Japanese Journal of Applied Physics 56, 2017
82017
Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon
G Kaur, T Dutta, R Sridharan, X Zheng, A Danner, R Stangl
Solar Energy Materials and Solar Cells 221, 110857, 2021
72021
Can interface charge enhance carrier selectivity in tunnel-layer/poly-Si passivated contacts?
G Kaur, T Dutta, Z Xin, A Danner, R Stangl
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 0438-0442, 2020
72020
Ultra-thin aluminium oxide tunnel layer passivated contact for high-efficiency crystalline silicon solar cells
X Zheng
PQDT-Global, 2018
62018
Strain affected electronic properties of bilayer tungsten disulfide
Z Xin, L Zeng, Y Wang, K Wei, G Du, J Kang, X Liu
Japanese Journal of Applied Physics 53 (4S), 04EN06, 2014
62014
Strain effects on monolayer MoS2 field effect transistors
L Zeng, Z Xin, P Chang, X Liu
Japanese Journal of Applied Physics 54 (4S), 04DC17, 2015
52015
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