Prati
Zheng Xin
Zheng Xin
Potvrđena adresa e-pošte na nus.edu.sg
Naslov
Citirano
Citirano
Godina
Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2
L Zeng, Z Xin, S Chen, G Du, J Kang, X Liu
Applied Physics Letters 103 (11), 2013
792013
Ultra-thin atomic layer deposited aluminium oxide tunnel layer passivated hole-selective contacts for silicon solar cells
Z Xin, ZP Ling, P Wang, J Ge, C Ke, KB Choi, AG Aberle, R Stangl
Solar Energy Materials and Solar Cells 191, 164-174, 2018
502018
Understanding surface treatment and ALD AlOx thickness induced surface passivation quality of c-Si Cz wafers
G Kaur, N Dwivedi, X Zheng, B Liao, LZ Peng, A Danner, R Stangl, ...
IEEE Journal of Photovoltaics 7 (5), 1224-1235, 2017
392017
Double-sided passivated contacts for solar cell applications: An industrially viable approach toward 24% efficient large area silicon solar cells
ZP Ling, Z Xin, P Wang, R Sridharan, C Ke, R Stangl
Silicon Materials, 89, 2019
242019
Phonon-limited electron mobility in single-layer MoS2
L Zeng, Z Xin, SW Chen, G Du, JF Kang, XY Liu
Chinese Physics Letters 31 (2), 027301, 2014
242014
Ultra-thin ALD-AlOx/PEDOT: PSS hole selective passivated contacts: An attractive low cost approach to increase solar cell performance
ZP Ling, Z Xin, G Kaur, C Ke, R Stangl
Solar Energy Materials and Solar Cells 185, 477-486, 2018
222018
An Improved Methodology for Extracting the Interface Defect Density of Passivated Silicon Solar Cells
Z Xin, S Duttagupta, M Tang, Z Qiu, B Liao, AG Aberle, R Stangl
IEEE Journal of Photovoltaics, 2016
202016
Improved silicon oxide/polysilicon passivated contacts for high efficiency solar cells via optimized tunnel layer annealing
G Kaur, Z Xin, T Dutta, R Sridharan, R Stangl, A Danner
Solar Energy Materials and Solar Cells 217, 110720, 2020
192020
Engineering aluminum oxide/polysilicon hole selective passivated contacts for high efficiency solar cells
G Kaur, Z Xin, R Sridharan, A Danner, R Stangl
Solar Energy Materials and Solar Cells 218, 110758, 2020
172020
Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
Z Xin, ZP Ling, N Nandakumar, G Kaur, C Ke, B Liao, AG Aberle, R Stangl
Japanese Journal of Applied Physics 56, 8S2, 2017
162017
Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices
Y Hou, B Chen, B Gao, ZY Lun, Z Xin, R Liu, LF Liu, DD Han, Y Wang, ...
2013 IEEE International Conference of Electron Devices and Solid-state …, 2013
112013
Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon
G Kaur, T Dutta, R Sridharan, X Zheng, A Danner, R Stangl
Solar Energy Materials and Solar Cells 221, 110857, 2021
102021
Ultra-thin LPCVD SiNx/n+poly-Si passivated contacts – A possibility?
G Kaur, T Dutta, Z Xin, ZP Ling, MJ Naval, MSM Saifullah, R Stangl, ...
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2679-2683, 2019
102019
Ultra-thin aluminium oxide tunnel layer passivated contact for high-efficiency crystalline silicon solar cells
X Zheng
PQDT-Global, 2018
92018
Numerical investigation of metal–semiconductor–insulator–semiconductor passivated hole contacts based on atomic layer deposited AlOx
C Ke, Z Xin, ZP Ling, AG Aberle, R Stangl
Japanese Journal of Applied Physics 56 (8S2), 08MB08, 2017
92017
Comparison and characterization of different tunnel layers, suitable for passivated contact formation
ZP Ling, Z Xin, C Ke, KJ Buatis, S Duttagupta, JS Lee, A Lai, A Hsu, ...
Japanese Journal of Applied Physics 56, 2017
92017
Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET
Y Wang, P Huang, Z Xin, L Zeng, X Liu, G Du, J Kang
Japanese Journal of Applied Physics 53 (4S), 04EC05, 2014
92014
Can interface charge enhance carrier selectivity in tunnel-layer/poly-Si passivated contacts?
G Kaur, T Dutta, Z Xin, A Danner, R Stangl
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 0438-0442, 2020
72020
Strain effects on monolayer MoS2 field effect transistors
L Zeng, Z Xin, P Chang, X Liu
Japanese Journal of Applied Physics 54 (4S), 04DC17, 2015
62015
Strain affected electronic properties of bilayer tungsten disulfide
Z Xin, L Zeng, Y Wang, K Wei, G Du, J Kang, X Liu
Japanese Journal of Applied Physics 53 (4S), 04EN06, 2014
62014
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