| Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors VK Sangwan, HN Arnold, D Jariwala, TJ Marks, LJ Lauhon, MC Hersam Nano letters 13 (9), 4351-4355, 2013 | 268 | 2013 |
| Large‐Area, Electronically Monodisperse, Aligned Single‐Walled Carbon Nanotube Thin Films Fabricated by Evaporation‐Driven Self‐Assembly TA Shastry, JWT Seo, JJ Lopez, HN Arnold, JZ Kelter, VK Sangwan, ... Small 9 (1), 45-51, 2013 | 84 | 2013 |
| Reducing flicker noise in chemical vapor deposition graphene field-effect transistors HN Arnold, VK Sangwan, SW Schmucker, CD Cress, KA Luck, ... Applied Physics Letters 108 (7), 2016 | 30 | 2016 |
| Correlated In Situ Low‐Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells Using Fullerene and Non‐Fullerene Acceptors KA Luck, VK Sangwan, PE Hartnett, HN Arnold, MR Wasielewski, ... Advanced Functional Materials 27 (48), 1703805, 2017 | 29 | 2017 |
| Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors JJ McMorrow, CD Cress, HN Arnold, VK Sangwan, D Jariwala, ... Applied Physics Letters 110 (7), 2017 | 24 | 2017 |
| Tunable radiation response in hybrid organic–inorganic gate dielectrics for low-voltage graphene electronics HN Arnold, CD Cress, JJ McMorrow, SW Schmucker, VK Sangwan, ... ACS Applied Materials & Interfaces 8 (8), 5058-5064, 2016 | 19 | 2016 |
| Extrinsic and intrinsic photoresponse in monodisperse carbon nanotube thin film transistors E Sczygelski, VK Sangwan, CC Wu, HN Arnold, K Everaerts, TJ Marks, ... Applied Physics Letters 102 (8), 2013 | 17 | 2013 |
| Suppression of polyfluorene photo-oxidative degradation via encapsulation of single-walled carbon nanotubes KA Luck, HN Arnold, TA Shastry, TJ Marks, MC Hersam The Journal of Physical Chemistry Letters 7 (20), 4223-4229, 2016 | 11 | 2016 |
| Optoelectronic applications of monodisperse carbon nanomaterials HN Arnold, M Hersam The Wonder of Nanotechnology: Quantum Optoelectronic Devices and …, 2013 | 1 | 2013 |
| Probing Charge Transport and Fluctuations at the Two-Dimensional Semiconductor-Dielectric Interface HN Arnold Northwestern University, 2015 | | 2015 |
