Nicolas Cavassilas
Nicolas Cavassilas
Potvrđena adresa e-pošte na - Početna stranica
Material challenges for solar cells in the twenty-first century: directions in emerging technologies
S Almosni, A Delamarre, Z Jehl, D Suchet, L Cojocaru, M Giteau, ...
Science and Technology of advanced MaTerialS 19 (1), 336-369, 2018
Influence of band-structure on electron ballistic transport in Silicon nanowire MOSFET's: an atomistic study
K Nehari, N Cavassilas, JL Autran, M Bescond, D Munteanu, M Lannoo
Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005
3D quantum modeling and simulation of multiple-gate nanowire MOSFETs
M Bescond, K Nehari, JL Autran, N Cavassilas, D Munteanu, M Lannoo
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented
M Bescond, N Cavassilas, M Lannoo
Nanotechnology 18 (25), 255201, 2007
Energy-band structure in strained silicon: A 20-band and Bir–Pikus Hamiltonian model
S Richard, F Aniel, G Fishman, N Cavassilas
Journal of applied physics 94 (3), 1795-1799, 2003
Flexible photodiodes based on nitride core/shell p–n junction nanowires
H Zhang, X Dai, N Guan, A Messanvi, V Neplokh, V Piazza, M Vallo, ...
ACS applied materials & interfaces 8 (39), 26198-26206, 2016
Energy-band structure of GaAs and Si: A sps* k⋅ p method
N Cavassilas, F Aniel, K Boujdaria, G Fishman
Physical Review B 64 (11), 115207, 2001
Full-band study of current across silicon nanowire transistors
K Nehari, N Cavassilas, F Michelini, M Bescond, JL Autran, M Lannoo
Applied physics letters 90 (13), 132112, 2007
Modeling of nanoscale solar cells: The Green's function formalism
N Cavassilas, F Michelini, M Bescond
Journal of Renewable and Sustainable Energy 6 (1), 011203, 2014
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
M Bescond, N Cavassilas, K Kalna, K Nehari, L Raymond, JL Autran, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
Strained silicon on SiGe: Temperature dependence of carrier effective masses
S Richard, N Cavassilas, F Aniel, G Fishman
Journal of applied physics 94 (8), 5088-5094, 2003
Inelastic scattering in nanoscale devices: One-shot current-conserving lowest-order approximation
H Mera, M Lannoo, C Li, N Cavassilas, M Bescond
Physical Review B 86 (16), 161404, 2012
Capacitance-voltage characteristics of metal-oxide-strained semiconductor Si/SiGe heterostructures
N Cavassilas, JL Autran
Nanotech 2002 1, 600-603, 2002
Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering
N Cavassilas, F Michelini, M Bescond
Journal of Applied Physics 109 (7), 073706, 2011
Modeling of phonon scattering in n-type nanowire transistors using one-shot analytic continuation technique
M Bescond, C Li, H Mera, N Cavassilas, M Lannoo
Journal of Applied Physics 114 (15), 153712, 2013
Efficient quantum modeling of inelastic interactions in nanodevices
Y Lee, M Lannoo, N Cavassilas, M Luisier, M Bescond
Physical Review B 93 (20), 205411, 2016
One-shot current conserving quantum transport modeling of phonon scattering in n-type double-gate field-effect-transistors
N Cavassilas, M Bescond, H Mera, M Lannoo
Applied Physics Letters 102 (1), 013508, 2013
Tight-binding calculations of Ge-nanowire bandstructures
M Bescond, N Cavassilas, K Nehari, M Lannoo
Journal of Computational Electronics 6 (1-3), 341-344, 2007
Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier double-gate MOSFETs
M Bescond, JL Autran, D Munteanu, N Cavassilas, M Lannoo
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
Nanoscale device modeling using a conserving analytic continuation technique
H Mera, M Lannoo, N Cavassilas, M Bescond
Physical Review B 88 (7), 075147, 2013
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