| Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3 L Dong, R Jia, B Xin, B Peng, Y Zhang Scientific reports 7 (1), 40160, 2017 | 300 | 2017 |
| Progress of ultra wide band gap semiconductor materials in power MOSFETs H Zhang, L Yuan, X Tang, J Hu, J Sun, Y Zhang, Y Zhang, R Jia IEEE Transactions on Power Electronics 35 (5), 5157, 2020 | 137* | 2020 |
| Self-powered photodetectors based on β-Ga2O3/4H–SiC heterojunction with ultrahigh current on/off ratio and fast response J Yu, L Dong, B Peng, L Yuan, Y Huang, L Zhang, Y Zhang, R Jia Journal of Alloys and Compounds 821, 153532, 2020 | 121 | 2020 |
| Ab initio study of N-doped β-Ga2O3 with intrinsic defects: the structural, electronic and optical properties L Dong, R Jia, C Li, B Xin, Y Zhang Journal of Alloys and Compounds 712, 379-385, 2017 | 109 | 2017 |
| First-principles calculations of electronic and optical properties of aluminum-doped β-Ga2O3 with intrinsic defects X Ma, Y Zhang, L Dong, R Jia Results in physics 7, 1582-1589, 2017 | 94 | 2017 |
| Influence of annealing temperature on structure and photoelectrical performance of β-Ga2O3/4H-SiC heterojunction photodetectors J Yu, Z Nie, L Dong, L Yuan, D Li, Y Huang, L Zhang, Y Zhang, R Jia Journal of Alloys and Compounds 798, 458-466, 2019 | 89 | 2019 |
| Improved photoresponse performance of self-powered β-Ga₂O₃/NiO heterojunction UV photodetector by surface plasmonic effect of Pt nanoparticles J Yu, M Yu, Z Wang, L Yuan, Y Huang, L Zhang, Y Zhang, R Jia IEEE Transactions on Electron Devices 67 (8), 3199-3204, 2020 | 81 | 2020 |
| Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of β-Ga2O3 films L Dong, R Jia, B Xin, Y Zhang Journal of Vacuum Science & Technology A 34 (6), 2016 | 81 | 2016 |
| Self-powered MSM deep-ultraviolet β-Ga2O3 photodetector realized by an asymmetrical pair of Schottky contacts L Dong, J Yu, R Jia, J Hu, Y Zhang, J Sun Optical Materials Express 9 (3), 1191-1199, 2019 | 79 | 2019 |
| High-performance photodetector based on sol–gel epitaxially grown α/β Ga2O3 thin films M Yu, C Lv, J Yu, Y Shen, L Yuan, J Hu, S Zhang, H Cheng, Y Zhang, ... Materials Today Communications 25, 101532, 2020 | 54 | 2020 |
| Performance-enhanced solar-blind photodetector based on a CH 3 NH 3 PbI 3/β-Ga 2 O 3 hybrid structure L Dong, T Pang, J Yu, Y Wang, W Zhu, H Zheng, J Yu, R Jia, Z Chen Journal of Materials Chemistry C 7 (45), 14205-14211, 2019 | 47 | 2019 |
| Surface modification of β-Ga2O3 layer using pt nanoparticles for improved deep UV photodetector performance J Yu, J Lou, Z Wang, S Ji, J Chen, M Yu, B Peng, Y Hu, L Yuan, Y Zhang, ... Journal of Alloys and Compounds 872, 159508, 2021 | 46 | 2021 |
| The further investigation of N-doped β-Ga2O3 thin films with native defects for Schottky-barrier diode S Luan, L Dong, X Ma, R Jia Journal of Alloys and Compounds 812, 152026, 2020 | 46 | 2020 |
| Elements (Si, Sn, and Mg) doped α-Ga2O3: First-principles investigations and predictions L Dong, J Yu, Y Zhang, R Jia Computational Materials Science 156, 273-279, 2019 | 43 | 2019 |
| Leakage Current conduction mechanisms and Electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors H Zhang, R Jia, L Yuan, X Tang, Y Zhang, Y Zhang Journal of Physics D: Applied Physics, 2018 | 42 | 2018 |
| Inhibition of zero drift in perovskite-based photodetector devices via [6, 6]-Phenyl-C61-butyric acid methyl ester doping Y Liu, R Jia, Y Wang, Z Hu, Y Zhang, T Pang, Y Zhu, S Luan ACS Applied Materials & Interfaces 9 (18), 15638-15643, 2017 | 35 | 2017 |
| Analysis of the structural, anisotropic elastic and electronic properties of β-Ga2O3 with various pressures S Luan, L Dong, R Jia Journal of Crystal Growth 505, 74-81, 2019 | 32 | 2019 |
| Self-powered behavior based on the light-induced self-poling effect in perovskite-based transport layer-free photodetectors T Pang, R Jia, Y Wang, K Sun, Z Hu, Y Zhu, S Luan, Y Zhang Journal of Materials Chemistry C 7 (3), 609-616, 2019 | 29 | 2019 |
| Energy-band alignment of (HfO2) x (Al2O3) 1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201) L Yuan, H Zhang, R Jia, L Guo, Y Zhang, Y Zhang Applied Surface Science 433, 530-534, 2018 | 29 | 2018 |
| Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights YH Wang, YM Zhang, YM Zhang, QW Song, RX Jia Chinese Physics B 20 (8), 087305, 2011 | 28 | 2011 |
Lei Yuanxidian universityPotvrđena adresa e-pošte na xidian.edu.cn
