Prati
Mahdi Moradinasab
Mahdi Moradinasab
Darmstadt University of Technology
Potvrđena adresa e-pošte na iue.tuwien.ac.at
Naslov
Citirano
Citirano
Godina
Adsorption of the NH3, NO, NO2, CO2, and CO gas molecules on blue phosphorene: a first-principles study
F Safari, M Moradinasab, M Fathipour, H Kosina
Applied Surface Science 464, 153-161, 2019
962019
The transport and optical sensing properties of MoS2, MoSe2, WS2 and WSe2 semiconducting transition metal dichalcogenides
M Nayeri, M Moradinasab, M Fathipour
Semiconductor Science and Technology 33 (2), 025002, 2018
672018
Optical properties of armchair graphene nanoribbons embedded in hexagonal boron nitride lattices
H Nematian, M Moradinasab, M Pourfath, M Fathipour, H Kosina
Journal of Applied Physics 111 (9), 2012
322012
A computational study of ballistic graphene nanoribbon field effect transistors
M Noei, M Moradinasab, M Fathipour
Physica E: Low-dimensional Systems and Nanostructures 44 (7-8), 1780-1786, 2012
292012
Numerical study of graphene superlattice-based photodetectors
M Moradinasab, M Pourfath, M Fathipour, H Kosina
IEEE Transactions on Electron Devices 62 (2), 593-600, 2015
252015
Analytical models of approximations for wave functions and energy dispersion in zigzag graphene nanoribbons
M Moradinasab, H Nematian, M Pourfath, M Fathipour, H Kosina
Journal of Applied Physics 111 (7), 2012
152012
A comparison study of the effects of supply voltage and temperature on the stability and performance of CNFET and nanoscale Si-MOSFET SRAMs
M Moradinasab, F Karbassian, M Fathipour
2009 1st Asia symposium on quality electronic design, 19-23, 2009
152009
Stable, low power and high performance SRAM based on CNFET
M Moradinasab, M Fathipour
2009 10th International Conference on Ultimate Integration of Silicon, 317-320, 2009
152009
First principles characterization of defect-free and vacancy-defected monolayer PtSe2 gas sensors
E Norouzzadeh, S Mohammadi, M Moradinasab
Sensors and Actuators A: Physical 313, 112209, 2020
112020
Superior sensitivity and optical response of blue phosphorene and its doped systems for gas sensing applications
F Safari, M Moradinasab, U Schwalke, L Filipovic
ACS omega 6 (29), 18770-18781, 2021
62021
Towards ambipolar planar devices: The defet device in area constrained xor applications
M Reuter, J Pfau, TA Krauss, M Moradinasab, U Schwalke, J Becker, ...
2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), 1-4, 2020
62020
From mosfets to ambipolar transistors: A static defet inverter cell for soi
M Reuter, TA Krauss, M Moradinasab, J Pfau, U Schwalke, J Becker, ...
2019 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 113-116, 2019
62019
Tunneling FET based on defect-free, vacancy-defected, and passivated monolayer PtSe2 channel: A first principles study
E Norouzzadeh, S Mohammadi, M Moradinasab
Materials Science in Semiconductor Processing 138, 106258, 2022
42022
The transport and optical sensing properties of blue phosphorene: A first-principles study
F Safari, M Moradinasab, M Fathipour, U Schwalke
2019 14th International Conference on Design & Technology of Integrated …, 2019
32019
The impact of process parameters on the output characteristics of an LDMOS device
MA Malakoutian, V Fathipour, M Fathipour, A Mojab, MM Allame, ...
International Journal of Electrical and Computer Engineering 4 (9), 1426-1429, 2010
32010
Optical properties of semiconductor nanostructures
M Moradinasab
Technische Universität Wien, 2015
22015
Performance optimization and instability study in ring cavity quantum cascade lasers
M Moradinasab, M Pourfath, H Kosina
IEEE Journal of Quantum Electronics 51 (1), 1-7, 2014
22014
A modified bus invert method for the submicron technology
M Moradinasab, S Mehrnami, R Yousefi
2009 4th International Design and Test Workshop (IDT), 1-3, 2009
22009
Theoretical study of single and bilayer graphene nanoribbons photodetectors
M Moradinasab, H Nematian, M Pourfath, M Fathipour, H Kosina
ECS Meeting (ECSM), 2012
12012
A Compact Model for Current-Voltage in Doped Carbon Nanotube Field Effect Transistors
M Moradinasab, M Fathipour
Journal of Iranian Association of Electrical and Electronics Engineers 8 (2 …, 2011
12011
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