Xiaochi Liu 刘晓迟

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Won Jong YooProfessor of Sungkyunkwan UniversityPotvrđena adresa e-pošte na skku.edu
Deshun QuPh.D, SAINT, Sungkyunkwan UniversityPotvrđena adresa e-pošte na skku.edu
Min Sup ChoiDepartment of Materials Science and Engineering, Chungnam National UniversityPotvrđena adresa e-pošte na cnu.ac.kr
Daeyeong LeeSamsumg ElectronicsPotvrđena adresa e-pošte na samsung.com
Huamin LiAssistant Professor, University at BuffaloPotvrđena adresa e-pošte na buffalo.edu
James C. HoneDepartment of Mechanical Engineering, Columbia UniversityPotvrđena adresa e-pošte na columbia.edu
Zheng YangKing Abdullah University of Science and TechnologyPotvrđena adresa e-pošte na kaust.edu.sa
Ming Huang (黄明）University of Electronic Science and Technology of China; Nanyang Technological University.Potvrđena adresa e-pošte na uestc.edu.cn
Rodney RuoffThe IBS CMCM, Dept. of Chemistry, Dept. of MS&ESchool of Energy and ChEng,Potvrđena adresa e-pošte na unist.ac.kr
Changsik KimSKKU Advanced Institute of Nano Technology, Sungkyunkwan UniversityPotvrđena adresa e-pošte na skku.edu
E. H. HwangSungKyunKwan UniversityPotvrđena adresa e-pošte na skku.edu
Alan SeabaughProfessor of Electrical Engineering, University of Notre DamePotvrđena adresa e-pošte na nd.edu
Yongsuk ChoiDepartment of Medical Engineering, California Institute of TechnologyPotvrđena adresa e-pošte na caltech.edu
Inyong MoonSungkyunkwan UniversityPotvrđena adresa e-pošte na skku.edu
Faisal AhmedAalto UniveristyPotvrđena adresa e-pošte na aalto.fi
Jian SunProfessor of Physics, Central South Univ.Potvrđena adresa e-pošte na jaist.ac.jp

Prati

Xiaochi Liu 刘晓迟

School of Physics and Electronics, Central South University

Potvrđena adresa e-pošte na csu.edu.cn

Nano device 2D Materials


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Lateral MoS₂ p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo ACS nano 8 (9), 9332-9340, 2014	566	2014
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo Nature communications 6 (1), 6564, 2015	348	2015
P‐type polar transition of chemically doped multilayer MoS2 transistor X Liu#, D Qu#, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo Advanced Materials 28 (12), 2345-2351, 2016	239	2016
Carrier‐type modulation and mobility improvement of thin MoTe2 D Qu#, X Liu#, M Huang, C Lee, F Ahmed, H Kim, RS Ruoff, J Hone, ... Advanced Materials 29 (39), 1606433, 2017	183	2017
Modulation of quantum tunneling via a vertical two-dimensional black phosphorus and molybdenum disulfide p–n junction X Liu#, D Qu#, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ... ACS nano 11 (9), 9143-9150, 2017	181	2017
Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ... Acs Nano 12 (6), 6117-6127, 2018	150	2018
Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo Scientific reports 4 (1), 4041, 2014	138	2014
Patterning metal contacts on monolayer MoS₂ with vanishing Schottky barriers using thermal nanolithography X Zheng, A Calò, E Albisetti, X Liu, ASM Alharbi, G Arefe, X Liu, M Spieser, ... Nature Electronics 2 (1), 17-25, 2019	136	2019
Carrier transport at the metal–MoS 2 interface F Ahmed, MS Choi, X Liu, WJ Yoo Nanoscale 7 (20), 9222-9228, 2015	119	2015
Monolayer molybdenum disulfide transistors with single-atom-thick gates Y Zhu, Y Li, G Arefe, RA Burke, C Tan, Y Hao, X Liu, X Liu, WJ Yoo, ... Nano letters 18 (6), 3807-3813, 2018	110	2018
Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects X Liu#, MS Choi#, E Hwang, WJ Yoo, J Sun Advanced Materials, 2108425, 2021	94	2021
Effects of plasma treatment on surface properties of ultrathin layered MoS2 S Kim, MS Choi, D Qu, CH Ra, X Liu, M Kim, YJ Song, WJ Yoo 2D Materials 3 (3), 035002, 2016	74	2016
Edge contacts of graphene formed by using a controlled plasma treatment DW Yue, CH Ra, XC Liu, DY Lee, WJ Yoo Nanoscale 7 (2), 825-831, 2015	70	2015
High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering F Ahmed, YD Kim, MS Choi, X Liu, D Qu, Z Yang, J Hu, IP Herman, ... Advanced Functional Materials 27 (4), 1604025, 2017	56	2017
High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure S Hwan Lee, M Sup Choi, J Lee, C Ho Ra, X Liu, E Hwang, J Hee Choi, ... Applied Physics Letters 104 (5), 2014	46	2014
Tunneling devices and methods of manufacturing the same J Choi, W Yoo, SH Lee, C Min-Sup, XC Liu, J LEE US Patent 9,269,775, 2016	37	2016
Self-screened high performance multi-layer MoS 2 transistor formed by using a bottom graphene electrode D Qu#, X Liu#, F Ahmed, D Lee, WJ Yoo Nanoscale 7 (45), 19273-19281, 2015	37	2015
Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance X Liu#, D Qu, Y Yuan, J Sun, WJ Yoo ACS Appl. Mater. Interfaces 12 (23), 26586–26592, 2020	36	2020
Charge–Ferroelectric Transition in Ultrathin Na0. 5Bi4. 5Ti4O15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor X Liu#, X Zhou#, Y Pan, J Yang, H Xiang, Y Yuan, S Liu, H Luo, D Zhang, ... Advanced Materials 32 (49), 2004813, 2020	33	2020
High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions X Liu#, Y Pan, J Yang, D Qu, H Li, WJ Yoo, J Sun Applied Physics Letters 118 (23), 233101, 2021	27	2021

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