Prati
Laurent Raymond
Laurent Raymond
Aix-Marseille Université, Centre de Physique Théorique
Potvrđena adresa e-pošte na univ-amu.fr
Naslov
Citirano
Citirano
Godina
Interaction-induced adiabatic cooling for antiferromagnetism in optical lattices
AM Daré, L Raymond, G Albinet, AMS Tremblay
Physical Review B 76 (6), 064402, 2007
742007
Resistance of one-dimensional quasicrystals
B Iochum, L Raymond, D Testard
Physica A: Statistical Mechanics and its Applications 187 (1-2), 353-368, 1992
481992
Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors
M Bescond, M Lannoo, L Raymond, F Michelini
Journal of Applied Physics 107 (9), 093703, 2010
442010
Structure factor of 1D systems (superlattices) based on two-letter substitution rules. I. delta (Bragg) peaks
M Kolár, B Iochum, L Raymond
Journal of Physics A: Mathematical and General 26 (24), 7343, 1993
431993
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
M Bescond, N Cavassilas, K Kalna, K Nehari, L Raymond, JL Autran, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
412005
Enhanced conductivity in ionic conductor-insulator composites: numerical models in two and three dimensions
G Albinet, JM Debierre, P Knauth, C Lambert, L Raymond
The European Physical Journal B-Condensed Matter and Complex Systems 22 (4 …, 2001
252001
Mechanisms of magnetoelectricity in manganese-doped incipient ferroelectrics
RO Kuzian, VV Laguta, AM Daré, IV Kondakova, M Marysko, L Raymond, ...
Europhysics Letters 92 (1), 17007, 2010
212010
Evidence for impurity-induced polar state in from density functional calculations
IV Kondakova, RO Kuzian, L Raymond, R Hayn, VV Laguta
Physical Review B 79 (13), 134117, 2009
212009
Influence of uniaxial strain in Si and Ge p-type double-gate metal-oxide-semiconductor field effect transistors
M Moussavou, N Cavassilas, E Dib, M Bescond
Journal of Applied Physics 118 (11), 2015
172015
Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport
Y Lee, M Bescond, N Cavassilas, D Logoteta, L Raymond, M Lannoo, ...
Physical Review B 95 (20), 201412, 2017
162017
A palindromic half-line criterion for absence of eigenvalues and applications to substitution Hamiltonians
D Damanik, JM Ghez, L Raymond
Annales Henri Poincaré 2 (5), 927-939, 2001
162001
Dynamical spin Hall conductivity in a magnetic disordered system
TL van den Berg, L Raymond, A Verga
Physical Review B 84 (24), 245210, 2011
142011
Three-dimensional k· p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
N Pons, N Cavassilas, L Raymond, F Michelini, M Lannoo, M Bescond
Applied Physics Letters 99 (8), 082113, 2011
142011
Mechanism of O3 sensing on Cu2O (1 1 1) surface: First principle calculations
H Ouali, C Lambert-Mauriat, L Raymond, A Labidi
Applied surface science 351, 840-845, 2015
132015
Finite frequency noise in a normal metal–topological superconductor junction
D Bathellier, L Raymond, T Jonckheere, J Rech, A Zazunov, T Martin
Physical Review B 99 (10), 104502, 2019
102019
Dielectric resonances in disordered media
L Raymond, JM Laugier, S Schäfer, G Albinet
The European Physical Journal B-Condensed Matter and Complex Systems 31 (3 …, 2003
102003
Scattering theory of non-equilibrium noise and delta T current fluctuations through a quantum dot
A Popoff, J Rech, T Jonckheere, L Raymond, B Grémaud, S Malherbe, ...
Journal of Physics: Condensed Matter 34 (18), 185301, 2022
92022
Theory of nonequilibrium noise in general multiterminal superconducting hybrid devices: Application to multiple Cooper pair resonances
R Jacquet, A Popoff, KI Imura, J Rech, T Jonckheere, L Raymond, ...
Physical Review B 102 (6), 064510, 2020
92020
Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors
E Dib, M Bescond, N Cavassilas, F Michelini, L Raymond, M Lannoo
Journal of Applied Physics 114 (8), 083705, 2013
82013
Comment on``Spin Correlations in the Paramagnetic Phase and Ring Exchange in LaCuO''
L Raymond, G Albinet, A Tremblay
arXiv preprint cond-mat/0510811, 2005
82005
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