Bipolar Charge Transport in PCPDTBT‐PCBM Bulk‐Heterojunctions for Photovoltaic Applications M Morana, M Wegscheider, A Bonanni, N Kopidakis, S Shaheen, ... Advanced functional materials 18 (12), 1757-1766, 2008 | 227 | 2008 |
Spinodal nanodecomposition in semiconductors doped with transition metals T Dietl, K Sato, T Fukushima, A Bonanni, M Jamet, A Barski, S Kuroda, ... Reviews of Modern Physics 87 (4), 1311-1377, 2015 | 173 | 2015 |
A story of high-temperature ferromagnetism in semiconductors A Bonanni, T Dietl Chemical Society Reviews 39 (2), 528-539, 2010 | 169 | 2010 |
Paramagnetic and ferromagnetic : The relationship between structural, electronic, and magnetic properties A Bonanni, M Kiecana, C Simbrunner, T Li, M Sawicki, M Wegscheider, ... Physical Review B—Condensed Matter and Materials Physics 75 (12), 125210, 2007 | 148 | 2007 |
Controlled aggregation of magnetic ions in a semiconductor: An experimental demonstration A Bonanni, A Navarro-Quezada, T Li, M Wegscheider, Z Matěj, V Holư, ... Physical review letters 101 (13), 135502, 2008 | 145 | 2008 |
Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths A Bonanni Semiconductor Science and Technology 22 (9), R41, 2007 | 137 | 2007 |
Structural and paramagnetic properties of dilute W Stefanowicz, D Sztenkiel, B Faina, A Grois, M Rovezzi, T Devillers, ... Physical Review B—Condensed Matter and Materials Physics 81 (23), 235210, 2010 | 104 | 2010 |
Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga, Mn) N A Bonanni, M Sawicki, T Devillers, W Stefanowicz, B Faina, T Li, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035206, 2011 | 92 | 2011 |
Carrier-induced ferromagnetic interactions in p-doped Zn (1− x) MnxTe epilayers D Ferrand, J Cibert, C Bourgognon, S Tatarenko, A Wasiela, G Fishman, ... Journal of crystal growth 214, 387-390, 2000 | 74 | 2000 |
Observation of Strong-Coupling Effects in a Diluted Magnetic Semiconductor W Pacuski, P Kossacki, D Ferrand, A Golnik, J Cibert, M Wegscheider, ... Physical review letters 100 (3), 037204, 2008 | 72 | 2008 |
Origin of low-temperature magnetic ordering in GaMnN M Sawicki, T Devillers, S Gałęski, C Simserides, S Dobkowska, B Faina, ... Physical Review B—Condensed Matter and Materials Physics 85 (20), 205204, 2012 | 69 | 2012 |
Ga1− xMnxN epitaxial films with high magnetization G Kunert, S Dobkowska, T Li, H Reuther, C Kruse, S Figge, R Jakiela, ... Applied Physics Letters 101 (2), 2012 | 63 | 2012 |
Families of magnetic semiconductors—an overview T Dietl, A Bonanni, H Ohno Journal of Semiconductors 40 (8), 080301, 2019 | 62 | 2019 |
Embedded magnetic phases in (Ga, Fe) N: Key role of growth temperature A Navarro-Quezada, W Stefanowicz, T Li, B Faina, M Rovezzi, ... Physical Review B—Condensed Matter and Materials Physics 81 (20), 205206, 2010 | 62 | 2010 |
Phase diagram and critical behavior of the random ferromagnet GaMnN S Stefanowicz, G Kunert, C Simserides, JA Majewski, W Stefanowicz, ... Physical Review B—Condensed Matter and Materials Physics 88 (8), 081201, 2013 | 61 | 2013 |
Manipulating Mn–Mgk cation complexes to control the charge- and spin-state of Mn in GaN T Devillers, M Rovezzi, NG Szwacki, S Dobkowska, W Stefanowicz, ... Scientific Reports 2 (1), 722, 2012 | 60 | 2012 |
Local structure of (Ga, Fe) N and (Ga, Fe) N: Si investigated by X-ray absorption fine structure spectroscopy M Rovezzi, F D’Acapito, A Navarro-Quezada, B Faina, T Li, A Bonanni, ... Physical Review B—Condensed Matter and Materials Physics 79 (19), 195209, 2009 | 59 | 2009 |
Atomic diffusion‐induced deep levels near ZnSe/GaAs (100) interfaces AD Raisanen, LJ Brillson, L Vanzetti, A Bonanni, A Franciosi Applied physics letters 66 (24), 3301-3303, 1995 | 49 | 1995 |
Stretching magnetism with an electric field in a nitride semiconductor D Sztenkiel, M Foltyn, GP Mazur, R Adhikari, K Kosiel, K Gas, M Zgirski, ... Nature Communications 7 (1), 13232, 2016 | 43 | 2016 |
Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors M Huber, M Silvestri, L Knuuttila, G Pozzovivo, A Andreev, A Kadashchuk, ... Applied Physics Letters 107 (3), 2015 | 42 | 2015 |