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Jerry Woodall
Jerry Woodall
Potvrđena adresa e-pošte na ucdavis.edu - Početna stranica
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Citirano
Citirano
Godina
Structure of GaAs (001)(2× 4)− c (2× 8) determined by scanning tunneling microscopy
MD Pashley, KW Haberern, W Friday, JM Woodall, PD Kirchner
Physical review letters 60 (21), 2176, 1988
6481988
Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
AC Warren, JM Woodall, JL Freeouf, D Grischkowsky, DT McInturff, ...
Applied physics letters 57 (13), 1331-1333, 1990
5651990
Schottky barriers: An effective work function model
JL Freeouf, JM Woodall
Applied Physics Letters 39 (9), 727-729, 1981
5201981
Macroelectronics: Perspectives on technology and applications
RH Reuss, BR Chalamala, A Moussessian, MG Kane, A Kumar, ...
Proceedings of the IEEE 93 (7), 1239-1256, 2005
4282005
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
EA Fitzgerald, GP Watson, RE Proano, DG Ast, PD Kirchner, GD Pettit, ...
Journal of Applied Physics 65 (6), 2220-2237, 1989
3941989
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
MR Melloch, N Otsuka, JM Woodall, AC Warren, JL Freeouf
Applied physics letters 57 (15), 1531-1533, 1990
2951990
Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
KP Schoen, JM Woodall, JA Cooper, MR Melloch
IEEE Transactions on electron devices 45 (7), 1595-1604, 1998
2721998
Unpinned (100) GaAs surfaces in air using photochemistry
SD Offsey, JM Woodall, AC Warren, PD Kirchner, TI Chappell, GD Pettit
Applied physics letters 48 (7), 475-477, 1986
2681986
Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy
JM Woodall, JL Freeouf, GD Pettit, T Jackson, P Kirchner
Journal of Vacuum Science and Technology 19 (3), 626-627, 1981
2671981
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ...
Journal of applied physics 64 (10), 4843-4852, 1988
2521988
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs
RM Feenstra, JM Woodall, GD Pettit
Physical review letters 71 (8), 1176, 1993
2481993
Carrier lifetime versus anneal in low temperature growth GaAs
ES Harmon, MR Melloch, JM Woodall, DD Nolte, N Otsuka, CL Chang
Applied physics letters 63 (16), 2248-2250, 1993
2301993
Structure and recombination in InGaAs/GaAs heterostructures
EA Fitzgerald, DG Ast, PD Kirchner, GD Pettit, JM Woodall
Journal of applied physics 63 (3), 693-703, 1988
2261988
The effect of fluorescent wavelength shifting on solar cell spectral response
HJ Hovel, RT Hodgson, JM Woodall
Solar Energy Materials 2 (1), 19-29, 1979
2181979
EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY
H Rupprecht, JM Woodall, GD Pettit
Applied Physics Letters 11 (3), 81-83, 1967
2041967
An isothermal etchback‐regrowth method for high‐efficiency Ga1−xAlxAs‐GaAs solar cells
JM Woodall, HJ Hovel
Applied Physics Letters 30 (9), 492-493, 1977
2031977
Liquid phase-enabled reaction of Al–Ga and Al–Ga–In–Sn alloys with water
JT Ziebarth, JM Woodall, RA Kramer, G Choi
international journal of hydrogen energy 36 (9), 5271-5279, 2011
1952011
High‐efficiency Ga1−xAlxAs–GaAs solar cells
JM Woodall, HJ Hovel
Applied Physics Letters 21 (8), 379-381, 1972
1951972
GaAs metallization: Some problems and trends
JM Woodall, JL Freeouf
Journal of Vacuum Science and Technology 19 (3), 794-798, 1981
1911981
Effective barrier heights of mixed phase contacts: Size effects
JL Freeouf, TN Jackson, SE Laux, JM Woodall
Applied Physics Letters 40 (7), 634-636, 1982
1691982
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