Prati
Vincent Talbo
Vincent Talbo
Keley Data
Potvrđena adresa e-pošte na keley.com
Naslov
Citirano
Citirano
Godina
Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors
V Talbo, J Saint-Martin, S Retailleau, P Dollfus
Scientific reports 7 (1), 14783, 2017
242017
Physical simulation of silicon-nanocrystal-based single-electron transistors
V Talbo, S Galdin-Retailleau, A Valentin, P Dollfus
IEEE transactions on electron devices 58 (10), 3286-3293, 2011
162011
Level anticrossing effect in single-level or multilevel double quantum dots: Electrical conductance, zero-frequency charge susceptibility, and Seebeck coefficient
M Lavagna, V Talbo, TQ Duong, A Crépieux
Physical Review B 102 (11), 115112, 2020
72020
Charge susceptibility and conductances of a double quantum dot
V Talbo, M Lavagna, TQ Duong, A Crépieux
AIP Advances 8 (10), 2018
42018
Time-dependent shot noise in multi-level quantum dot-based single-electron devices
V Talbo, J Mateos, S Retailleau, P Dollfus, T González
Semiconductor Science and Technology 30 (5), 055002, 2015
42015
Sub-and super-poissonian noise in si quantum dots using fully self-consistent 3d simulation
V Talbo, D Querlioz, S Retailleau, P Dollfus
Fluctuation and Noise Letters 11 (03), 1242006, 2012
32012
Monte Carlo analysis of III–V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs
BG Vasallo, V Talbo, T González, Y Lechaux, N Wichmann, S Bollaert, ...
2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017
22017
Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
V Talbo, J Mateos, T González, Y Lechaux, N Wichmann, S Bollaert, ...
Journal of Physics: Conference Series 647 (1), 012056, 2015
22015
Thermoelectric conversion in silicon quantum-dots
V Talbo, J Saint-Martin, Y Apertet, S Retailleau, P Dollfus
Journal of Physics: Conference Series 395 (1), 012112, 2012
22012
Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
BG Vasallo, T González, V Talbo, Y Lechaux, N Wichmann, S Bollaert, ...
Journal of Applied Physics 123 (3), 2018
12018
Improvement of interfacial and electrical properties of Al2O3/n-Ga0. 47In0. 53As for III-V impact ionization MOSFETs
Y Lechaux, A Fadjie, S Bollaert, V Talbo, J Mateos, T González, ...
Journal of Physics: Conference Series 647 (1), 012062, 2015
12015
Présentation du GIP-CNFM-CIME Nanotech
A Aitoumeri
Abdelhamid Aitoumeri, 2023
2023
Thermoelectric properties of Quantum Dot-based devices
V Talbo, P Dollfus, J Saint-Martin
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-4, 2018
2018
Time-dependent physics of double-tunnel junctions
V Talbo, J Mateos, S Retailleau, P Dollfus, T González
2015 10th Spanish Conference on Electron Devices (CDE), 1-4, 2015
2015
Frequency-dependent shot noise in single-electron devices
V Talbo, J Mateos, S Retailleau, P Dollfus, T González
2014 International Workshop on Computational Electronics (IWCE), 1-3, 2014
2014
Étude théorique du transport électronique dans les nanodispositifs à boîtes quantiques semiconductrices
V Talbo
Paris 11, 2012
2012
Shot noise behavior in single-electron quantum dot-based structures
V Talbo, S Galdin-Retailleau, D Querlioz, P Dollfus
2012 15th International Workshop on Computational Electronics, 1-4, 2012
2012
Fully self-consistent simulation of silicon nanocrystal-based single-electron transistors
V Talbo, A Valentin, S Galdin-Retailleau, P Dollfus
2010 14th International Workshop on Computational Electronics, 1-4, 2010
2010
Impact ionization and band-to-band tunneling in In
BG Vasallo, T González, V Talbo
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