Erik Lind
Erik Lind
Professor i nanoelektronik, Lunds Universitet
Verified email at - Homepage
Cited by
Cited by
Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
E Lind, AI Persson, L Samuelson, LE Wernersson
Nano Letters 6 (9), 1842-1846, 2006
High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors
AW Dey, BM Borg, B Ganjipour, M Ek, KA Dick, E Lind, C Thelander, ...
IEEE Electron device letters 34 (2), 211-213, 2013
Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz
M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ...
Nano Letters 10 (3), 809-812, 2010
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V
E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson
2016 IEEE International Electron Devices Meeting (IEDM), 19.1. 1-19.1. 4, 2016
Assembly of nanoscaled field effect transistors
LE Wernersson, E Lind, T Bryllert, J Ohlsson, T L÷wgren, L Samuelson, ...
US Patent 8,063,450, 2011
Development of a vertical wrap-gated InAs FET
C Thelander, C Rehnstedt, LE Froberg, E Lind, T Martensson, P Caroff, ...
IEEE Transactions on Electron Devices 55 (11), 3030-3036, 2008
III-V nanowires—Extending a narrowing road
LE Wernersson, C Thelander, E Lind, L Samuelson
Proceedings of the IEEE 98 (12), 2047-2060, 2010
Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade
E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ...
Nano letters 17 (7), 4373-4380, 2017
High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET
M Egard, L Ohlsson, BM Borg, F Lenrick, R Wallenberg, LE Wernersson, ...
2011 International Electron Devices Meeting, 13.2. 1-13.2. 4, 2011
Ultralow resistance in situ Ohmic contacts to InGaAs/InP
U Singisetti, MA Wistey, JD Zimmerman, BJ Thibeault, MJW Rodwell, ...
Applied Physics Letters 93 (18), 2008
High-frequency gate-all-around vertical InAs nanowire MOSFETs on Si substrates
S Johansson, E Memisevic, LE Wernersson, E Lind
IEEE Electron Device Letters 35 (5), 518-520, 2014
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
R Timm, A Fian, M Hjort, C Thelander, E Lind, JN Andersen, ...
Applied Physics Letters 97 (13), 2010
A High-Frequency Transconductance Method for Characterization of High- Border Traps in III-V MOSFETs
S Johansson, M Berg, KM Persson, E Lind
IEEE Transactions on Electron Devices 60 (2), 776-781, 2012
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
AW Dey, J Svensson, M Ek, E Lind, C Thelander, LE Wernersson
Nano letters 13 (12), 5919-5924, 2013
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
HA Nilsson, P Caroff, C Thelander, E Lind, O Karlstr÷m, LE Wernersson
Applied Physics Letters 96 (15), 2010
Low resistance, nonalloyed Ohmic contacts to InGaAs
AM Crook, E Lind, Z Griffith, MJW Rodwell, JD Zimmerman, AC Gossard, ...
Applied Physics Letters 91 (19), 2007
High-performance inas nanowire mosfets
AW Dey, C Thelander, E Lind, KA Dick, BM Borg, M Borgstrom, P Nilsson, ...
IEEE Electron Device Letters 33 (6), 791-793, 2012
High-Frequency Performance of Self-Aligned Gate-Last Surface ChannelMOSFET
M Egard, L Ohlsson, M Arlelid, KM Persson, BM Borg, F Lenrick, ...
IEEE Electron Device Letters 33 (3), 369-371, 2012
Extrinsic and intrinsic performance of vertical InAs nanowire MOSFETs on Si substrates
KM Persson, M Berg, MB Borg, J Wu, S Johansson, J Svensson, ...
IEEE Transactions on Electron Devices 60 (9), 2761-2767, 2013
Scaling of vertical InAs–GaSb nanowire tunneling field-effect transistors on Si
E Memi╣eviŠ, J Svensson, M Hellenbrand, E Lind, LE Wernersson
IEEE electron device letters 37 (5), 549-552, 2016
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