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Iriya Muneta
Iriya Muneta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Verified email at m.titech.ac.jp - Homepage
Title
Cited by
Cited by
Year
Unveiling the impurity band induced ferromagnetism in the magnetic semiconductor (Ga, Mn) As
M Kobayashi, I Muneta, Y Takeda, Y Harada, A Fujimori, J Krempaský, ...
Physical Review B 89 (20), 205204, 2014
1162014
Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopy
S Ohya, I Muneta, PN Hai, M Tanaka
Physical review letters 104 (16), 167204, 2010
682010
Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization
K Matsuura, T Ohashi, I Muneta, S Ishihara, K Kakushima, K Tsutsui, ...
Journal of Electronic Materials 47, 3497-3501, 2018
562018
GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier
S Ohya, I Muneta, PN Hai, M Tanaka
Applied Physics Letters 95 (24), 2009
352009
Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness
T Ohashi, I Muneta, K Matsuura, S Ishihara, Y Hibino, N Sawamoto, ...
Applied Physics Express 10 (4), 041202, 2017
342017
Experimental verification of a 3D scaling principle for low Vce(sat) IGBT
K Kakushima, T Hoshii, K Tsutsui, A Nakajima, S Nishizawa, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2016
312016
Valence-band structure of ferromagnetic semiconductor (In, Ga, Mn) As
S Ohya, I Muneta, Y Xin, K Takata, M Tanaka
Physical Review B 86 (9), 094418, 2012
302012
Digging up bulk band dispersion buried under a passivation layer
M Kobayashi, I Muneta, T Schmitt, L Patthey, S Ohya, M Tanaka, ...
Applied Physics Letters 101 (24), 2012
292012
High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization
M Hamada, K Matsuura, T Sakamoto, I Muneta, T Hoshii, K Kakushima, ...
IEEE Journal of the Electron Devices Society 7, 1258-1263, 2019
242019
Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor
I Muneta, S Ohya, H Terada, M Tanaka
Nature communications 7 (1), 12013, 2016
232016
High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs
J Shimizu, T Ohashi, K Matsuura, I Muneta, K Kakushima, K Tsutsui, ...
Japanese Journal of Applied Physics 56 (4S), 04CP06, 2017
222017
Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism
I Muneta, H Terada, S Ohya, M Tanaka
Applied Physics Letters 103 (3), 2013
222013
Quantum-level control in a III–V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers
S Ohya, I Muneta, M Tanaka
Applied Physics Letters 96 (5), 052505, 2010
202010
Artificial control of the bias-voltage dependence of tunnelling anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
I Muneta, T Kanaki, S Ohya, M Tanaka
Nature communications 8, 15387, 2017
162017
Electronic structure near the Fermi level in the ferromagnetic semiconductor GaMnAs studied by ultrafast time-resolved light-induced reflectivity measurements
T Ishii, T Kawazoe, Y Hashimoto, H Terada, I Muneta, M Ohtsu, M Tanaka, ...
Physical Review B 93 (24), 241303, 2016
162016
Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing
M Toyama, T Ohashi, K Matsuura, J Shimizu, I Muneta, K Kakushima, ...
Japanese Journal of Applied Physics 57 (7S2), 07MA04, 2018
142018
Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing
T Shirokura, I Muneta, K Kakushima, K Tsutsui, H Wakabayashi
Applied Physics Letters 115 (19), 2019
132019
Spin-dependent tunneling transport in a ferromagnetic GaMnAs and un-doped GaAs double-quantum-well heterostructure
I Muneta, S Ohya, M Tanaka
Applied Physics Letters 100 (16), 2012
122012
Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization
S Imai, T Hamada, M Hamada, T Shirokura, I Muneta, K Kakushima, ...
Japanese Journal of Applied Physics 60 (SB), SBBH10, 2021
112021
ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact
M Hamada, K Matsuura, T Hamada, I Muneta, K Kakushima, K Tsutsui, ...
Japanese Journal of Applied Physics 60 (SB), SBBH05, 2021
112021
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