| Coherent control of single spins in silicon carbide at room temperature M Widmann, SY Lee, T Rendler, NT Son, H Fedder, S Paik, LP Yang, ... Nature materials 14 (2), 164-168, 2015 | 705 | 2015 |
| Isolated electron spins in silicon carbide with millisecond coherence times DJ Christle, AL Falk, P Andrich, PV Klimov, JU Hassan, NT Son, E Janzén, ... Nature materials 14 (2), 160-163, 2015 | 547 | 2015 |
| Deep level defects in electron-irradiated SiC epitaxial layers C Hemmingsson, NT Son, O Kordina, JP Bergman, E Janzén, ... Journal of applied physics 81 (9), 6155-6159, 1997 | 374 | 1997 |
| Silicon vacancy related defect in 4H and 6H SiC E Sörman, NT Son, WM Chen, O Kordina, C Hallin, E Janzén Physical Review B 61 (4), 2613, 2000 | 304 | 2000 |
| Negative- System of Carbon Vacancy in -SiC NT Son, XT Trinh, LS Lřvlie, BG Svensson, K Kawahara, J Suda, ... Physical review letters 109 (18), 187603, 2012 | 292 | 2012 |
| Divacancy in 4h-sic NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ... Physical review letters 96 (5), 055501, 2006 | 274 | 2006 |
| High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ... Nature communications 10 (1), 1-8, 2019 | 269 | 2019 |
| Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface DJ Christle, PV Klimov, CF de las Casas, K Szász, V Ivády, ... Physical Review X 7 (2), 021046, 2017 | 262 | 2017 |
| Electrical and optical control of single spins integrated in scalable semiconductor devices CP Anderson, A Bourassa, KC Miao, G Wolfowicz, PJ Mintun, AL Crook, ... Science 366 (6470), 1225-1230, 2019 | 261 | 2019 |
| Electrically active defects in n-type 4H–silicon carbide grown in a vertical hot-wall reactor J Zhang, L Storasta, JP Bergman, NT Son, E Janzén Journal of Applied Physics 93 (8), 4708-4714, 2003 | 238 | 2003 |
| Scalable quantum photonics with single color centers in silicon carbide M Radulaski, M Widmann, M Niethammer, JL Zhang, SY Lee, T Rendler, ... Nano letters 17 (3), 1782-1786, 2017 | 210 | 2017 |
| Growth of SiC by “Hot‐Wall” CVD and HTCVD O Kordina, C Hallin, A Henry, JP Bergman, I Ivanov, A Ellison, NT Son, ... physica status solidi (b) 202 (1), 321-334, 1997 | 196 | 1997 |
| Negative-U centers in 4H silicon carbide CG Hemmingsson, NT Son, A Ellison, J Zhang, E Janzén Physical Review B 58 (16), R10119, 1998 | 186 | 1998 |
| Entanglement and control of single nuclear spins in isotopically engineered silicon carbide A Bourassa, CP Anderson, KC Miao, M Onizhuk, H Ma, AL Crook, H Abe, ... Nature Materials 19 (12), 1319-1325, 2020 | 173 | 2020 |
| Developing silicon carbide for quantum spintronics NT Son, CP Anderson, A Bourassa, KC Miao, C Babin, M Widmann, ... Applied Physics Letters 116 (19), 2020 | 170 | 2020 |
| Electron effective masses in 4H SiC NT Son, WM Chen, O Kordina, AO Konstantinov, B Monemar, E Janzén, ... Applied physics letters 66 (9), 1074-1076, 1995 | 156 | 1995 |
| Quantum properties of dichroic silicon vacancies in silicon carbide R Nagy, M Widmann, M Niethammer, DBR Dasari, I Gerhardt, ÖO Soykal, ... Physical Review Applied 9 (3), 034022, 2018 | 150 | 2018 |
| Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence C Babin, R Stöhr, N Morioka, T Linkewitz, T Steidl, R Wörnle, D Liu, ... Nature materials 21 (1), 67-73, 2022 | 144 | 2022 |
| The silicon vacancy in SiC E Janzén, A Gali, P Carlsson, A Gällström, B Magnusson, NT Son Physica B: Condensed Matter 404 (22), 4354-4358, 2009 | 144 | 2009 |
| Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC B Aradi, A Gali, P Deák, JE Lowther, NT Son, E Janzén, WJ Choyke Physical Review B 63 (24), 245202, 2001 | 126 | 2001 |
