Prati
Salim BERRADA
Naslov
Citirano
Citirano
Godina
Klein-tunneling transistor with ballistic graphene
Q Wilmart, S Berrada, VH Nguyen, G Feve, JM Berroir, P Dollfus, ...
Graphene 2014, 2014
542014
A Klein-tunneling transistor with ballistic graphene
Q Wilmart, S Berrada, D Torrin, VH Nguyen, G Fève, JM Berroir, P Dollfus, ...
2D Materials 1 (1), 011006, 2014
542014
Graphene nanomesh transistor with high on/off ratio and good saturation behavior
S Berrada, V Hung Nguyen, D Querlioz, J Saint-Martin, A Alarcón, ...
Applied Physics Letters 103 (18), 183509, 2013
532013
Pseudosaturation and negative differential conductance in graphene field-effect transistors
A Alarcón, VH Nguyen, S Berrada, D Querlioz, J Saint-Martin, A Bournel, ...
IEEE transactions on electron devices 60 (3), 985-991, 2013
342013
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
S Berrada, H Carrillo-Nunez, J Lee, C Medina-Bailon, T Dutta, O Badami, ...
Journal of Computational Electronics 19 (2), https://doi.org/10.1007/s10825 …, 2020
222020
Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors
T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ...
Materials 12 (1), 124, 2019
192019
NESS: new flexible nano-electronic simulation software
S Berrada, T Dutta, H Carrillo-Nunez, M Duan, F Adamu-Lema, J Lee, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
192018
Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors
O Badami, C Medina-Bailon, S Berrada, H Carrillo-Nunez, J Lee, ...
Applied Sciences 9 (9), 1895, 2019
142019
Random dopant-induced variability in Si-InAs nanowire tunnel FETs: A quantum transport simulation study
H Carrillo-Nuñez, J Lee, S Berrada, C Medina-Bailón, F Adamu-Lema, ...
IEEE Electron Device Letters 39 (9), 1473-1476, 2018
132018
Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications
J Liang, R Chen, R Ramos, J Lee, H Okuno, D Kalita, V Georgiev, ...
IEEE Transactions on Electron Devices 66 (5), 2346-2352, 2019
122019
Understanding electromigration in Cu-CNT composite interconnects: A multiscale electrothermal simulation study
J Lee, S Berrada, F Adamu-Lema, N Nagy, VP Georgiev, T Sadi, J Liang, ...
IEEE Transactions on Electron Devices 65 (9), 3884-3892, 2018
122018
A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects
J Liang, R Ramos, J Dijon, H Okuno, D Kalita, D Renaud, J Lee, ...
2017 IEEE International Electron Devices Meeting (IEDM), 35.5. 1-35.5. 4, 2017
112017
Atomistic-to circuit-level modeling of doped SWCNT for on-chip interconnects
J Liang, J Lee, S Berrada, VP Georgiev, R Pandey, R Chen, A Asenov, ...
IEEE Transactions on Nanotechnology 17 (6), 1084-1088, 2018
102018
Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs
J Lee, O Badami, H Carrillo-Nuñez, S Berrada, C Medina-Bailon, T Dutta, ...
Micromachines 9 (12), 643, 2018
82018
The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations
J Lee, S Berrada, J Liang, T Sadi, VP Georgiev, A Todri-Sanial, D Kalita, ...
2017 International Conference on Simulation of Semiconductor Processes and …, 2017
72017
Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors
M Bescond, H Carrillo-Nuñez, S Berrada, N Cavassilas, M Lannoo
Solid-State Electronics 122, 1-7, 2016
72016
Surface Roughness Scattering in NEGF using self-energy formulation
O Badami, S Berrada, H Carrillo-Nunez, C Medina-Bailon, V Georgiev, ...
2019 International Conference on Simulation of Semiconductor Processes and …, 2019
62019
Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors
C Medina-Bailon, T Sadi, M Nedjalkov, J Lee, S Berrada, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
62018
Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
S Berrada, M Bescond, N Cavassilas, L Raymond, M Lannoo
Applied Physics Letters 107 (15), 153508, 2015
62015
The impact of dopant diffusion on random dopant fluctuation in Si nanowire FETs: A quantum transport study
J Lee, S Berrada, H Carrillo-Nunez, C Medina-Bailon, F Adamu-Lema, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
52018
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