| Double negatively charged carbon vacancy at the h-and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study I Capan, T Brodar, Ž Pastuović, R Siegele, T Ohshima, S Sato, T Makino, ... Journal of Applied Physics 123 (16), 161597, 2018 | 50 | 2018 |
| Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime Ž Pastuović, R Siegele, I Capan, T Brodar, S Sato, T Ohshima Journal of Physics: Condensed Matter 29 (47), 475701, 2017 | 29 | 2017 |
| Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC T Brodar, I Capan, V Radulović, L Snoj, Ž Pastuović, J Coutinho, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2018 | 22 | 2018 |
| Deep Level Defects in 4H-SiC Epitaxial Layers I Capan, T Brodar, T Ohshima, S Sato, T Makino, Ž Pastuovic, R Siegele, ... Materials Science Forum 924, 225-228, 2018 | 1 | 2018 |
| Električki aktivni defekti u 4H-SiC uvedeni zračenjem T Brodar University of Zagreb. Faculty of Science. Department of Physics., 2017 | | 2017 |
