Varistha Chobpattana
Varistha Chobpattana
Faculty of Engineering, Rajamangala University of Technology Thanyaburi (RMUTT)
Verified email at - Homepage
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Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
V Chobpattana, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer
Applied Physics Letters 102 (2), 022907, 2013
Analysis of trap state densities at interfaces
Y Hwang, R Engel-Herbert, NG Rudawski, S Stemmer
Applied Physics Letters 96 (10), 102910, 2010
Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures
J Son, V Chobpattana, BM McSkimming, S Stemmer
Applied Physics Letters 101 (10), 102905, 2012
Frequency dispersion in III-V metal-oxide-semiconductor capacitors
S Stemmer, V Chobpattana, S Rajan
Applied Physics Letters 100 (23), 233510, 2012
Record Ion(0.50 mA/µm at VDD= 0.5 V and Ioff= 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs
S Lee, V Chobpattana, CY Huang, BJ Thibeault, W Mitchell, S Stemmer, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
0.5 V Supply Voltage Operation of In0.65Ga0.35As/GaAs0.4Sb0.6Tunnel FET
B Rajamohanan, R Pandey, V Chobpattana, C Vaz, D Gundlach, ...
IEEE Electron Device Letters 36 (1), 20-22, 2014
High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer
S Lee, CY Huang, D Cohen-Elias, JJM Law, V Chobpattanna, S Krämer, ...
Applied Physics Letters 103 (23), 233503, 2013
Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces
J Ahn, T Kent, E Chagarov, K Tang, AC Kummel, PC McIntyre
Applied Physics Letters 103 (7), 071602, 2013
Influence of gate metallization processes on the electrical characteristics of high-k/ interfaces
GJ Burek, Y Hwang, AD Carter, V Chobpattana, JJM Law, WJ Mitchell, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for …
R Pandey, H Madan, H Liu, V Chobpattana, M Barth, B Rajamohanan, ...
2015 Symposium on VLSI Technology (VLSI Technology), T206-T207, 2015
Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
V Chobpattana, TE Mates, WJ Mitchell, JY Zhang, S Stemmer
Journal of Applied Physics 114 (15), 154108, 2013
The formation and utility of sub-angstrom to nanometer-sized electron probes in the aberration-corrected transmission electron microscope at the University of Illinois
J Wen, J Mabon, C Lei, S Burdin, E Sammann, I Petrov, AB Shah, ...
Microscopy and Microanalysis 16 (2), 183-193, 2010
Highly scalable raised source/drain InAs quantum well MOSFETs exhibiting ION= 482 μA/μm at IOFF= 100 nA/μm and VDD= 0.5 V
S Lee, CY Huang, D Cohen-Elias, BJ Thibeault, W Mitchell, ...
IEEE Electron Device Lett 35 (6), 621-623, 2014
Influence of trimethylaluminum on the growth and properties of interfaces
Y Hwang, R Engel-Herbert, S Stemmer
Applied Physics Letters 98 (5), 052911, 2011
Extremely scaled high-k/In0.53Ga0.47As gate stacks with low leakage and low interface trap densities
V Chobpattana, E Mikheev, JY Zhang, TE Mates, S Stemmer
Journal of Applied Physics 116 (12), 124104, 2014
Al-doped metal-oxide-semiconductor capacitors
Y Hwang, V Chobpattana, JY Zhang, JM LeBeau, R Engel-Herbert, ...
Applied Physics Letters 98 (14), 142901, 2011
Scaled ZrO2 dielectrics for In0.53Ga0.47As gate stacks with low interface trap densities
V Chobpattana, TE Mates, JY Zhang, S Stemmer
Applied Physics Letters 104 (18), 182912, 2014
Low Power III–V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 µA/µm at Ioff=1 nA/µm and VDS=0.5 V
CY Huang, S Lee, V Chobpattana, S Stemmer, AC Gossard, B Thibeault, ...
2014 IEEE International Electron Devices Meeting, 25.4. 1-25.4. 4, 2014
Record extrinsic transconductance (2.45 mS/µm at VDS= 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth
S Lee, CY Huang, AD Carter, DC Elias, JJM Law, V Chobpattana, ...
2013 Symposium on VLSI Technology, T246-T247, 2013
The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
T Kent, K Tang, V Chobpattana, MA Negara, M Edmonds, W Mitchell, ...
The Journal of Chemical Physics 143 (16), 164711, 2015
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