Leonard Brillson
Leonard Brillson
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The structure and properties of metal-semiconductor interfaces
LJ Brillson
Surface Science Reports 2 (2), 123-326, 1982
ZnO Schottky barriers and Ohmic contacts
LJ Brillson, Y Lu
Journal of Applied Physics 109 (12), 2011
Transition in Schottky barrier formation with chemical reactivity
LJ Brillson
Physical Review Letters 40 (4), 260, 1978
Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO
HL Mosbacker, YM Strzhemechny, BD White, PE Smith, DC Look, ...
Applied Physics Letters 87 (1), 2005
Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO
DC Look, KD Leedy, L Vines, BG Svensson, A Zubiaga, F Tuomisto, ...
Physical Review B 84 (11), 115202, 2011
Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-visible absorption and cathodoluminescence spectroscopies
AJ Hauser, J Zhang, L Mier, RA Ricciardo, PM Woodward, TL Gustafson, ...
Applied Physics Letters 92 (22), 2008
Dominant effect of near-interface native point defects on ZnO Schottky barriers
LJ Brillson, HL Mosbacker, MJ Hetzer, Y Strzhemechny, GH Jessen, ...
Applied Physics Letters 90 (10), 2007
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ...
IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003
Contacts to semiconductors: fundamentals and technology
LJ Brillson
(No Title), 1993
Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
RS Okojie, M Xhang, P Pirouz, S Tumakha, G Jessen, LJ Brillson
Applied Physics Letters 79 (19), 3056-3058, 2001
Direct observation of a two-dimensional hole gas at oxide interfaces
H Lee, N Campbell, J Lee, TJ Asel, TR Paudel, H Zhou, JW Lee, ...
Nature materials 17 (3), 231-236, 2018
Remote hydrogen plasma doping of single crystal ZnO
YM Strzhemechny, HL Mosbacker, DC Look, DC Reynolds, CW Litton, ...
Applied physics letters 84 (14), 2545-2547, 2004
Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries
MJ Hetzer, YM Strzhemechny, M Gao, MA Contreras, A Zunger, ...
Applied Physics Letters 86 (16), 2005
Electronic structure of tantalum oxynitride perovskite photocatalysts
S Balaz, SH Porter, PM Woodward, LJ Brillson
Chemistry of Materials 25 (16), 3337-3343, 2013
Vacancy defect and defect cluster energetics in ion-implanted ZnO
Y Dong, F Tuomisto, BG Svensson, AY Kuznetsov, LJ Brillson
Physical Review B 81 (8), 081201, 2010
Chemical reaction and charge redistribution at metal–semiconductor interfaces
LJ Brillson
Journal of Vacuum Science and Technology 15 (4), 1378-1383, 1978
Electron energy loss spectroscopy and the optical properties of polymethylmethacrylate from 1 to 300 eV
JJ Ritsko, LJ Brillson, RW Bigelow, TJ Fabish
The Journal of Chemical Physics 69 (9), 3931-3939, 1978
Chemically induced charge redistribution at Al-GaAs interfaces
LJ Brillson, RZ Bachrach, RS Bauer, J McMenamin
Physical Review Letters 42 (6), 397, 1979
Optical signatures of deep level defects in Ga2O3
H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ...
Applied Physics Letters 112 (24), 2018
Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers
AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RA Weller, BD White, ...
IEEE Transactions on Nuclear Science 51 (6), 3801-3806, 2004
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