| Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ... IEEE Transactions on Electron Devices 65 (1), 45-50, 2017 | 189 | 2017 |
| N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 38 (3), 359-362, 2017 | 103 | 2017 |
| N-polar GaN HEMTs exhibiting record breakdown voltage over 2000 V and low dynamic on-resistance OS Koksaldi, J Haller, H Li, B Romanczyk, M Guidry, S Wienecke, S Keller, ... IEEE Electron Device Letters 39 (7), 1014-1017, 2018 | 85 | 2018 |
| N-polar deep recess MISHEMTs with record 2.9 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, X Zheng, E Ahmadi, ... IEEE Electron Device Letters 37 (6), 713-716, 2016 | 45 | 2016 |
| N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltage X Zheng, M Guidry, H Li, E Ahmadi, K Hestroffer, B Romanczyk, ... IEEE Electron Device Letters 37 (1), 77-80, 2015 | 43 | 2015 |
| W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ... 2016 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2016 | 37 | 2016 |
| In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ... Applied Physics Letters 103 (5), 2013 | 35 | 2013 |
| Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull M Guidry, S Wienecke, B Romanczyk, H Li, X Zheng, E Ahmadi, ... 2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016 | 32 | 2016 |
| Observation of hot electron and impact ionization in N-polar GaN MIS-HEMTs D Bisi, C De Santi, M Meneghini, S Wienecke, M Guidry, H Li, E Ahmadi, ... IEEE Electron Device Letters 39 (7), 1007-1010, 2018 | 29 | 2018 |
| High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion X Zheng, H Li, E Ahmadi, K Hestroffer, M Guidry, B Romanczyk, ... 2016 Lester Eastman Conference (LEC), 42-45, 2016 | 28 | 2016 |
| Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime E Ahmadi, R Shivaraman, F Wu, S Wienecke, SW Kaun, S Keller, ... Applied Physics Letters 104 (7), 2014 | 28 | 2014 |
| High performance N-polar GaN HEMTs with OIP3/Pdc∼12dB at 10GHz A Arias, P Rowell, J Bergman, M Urteaga, K Shinohara, X Zheng, H Li, ... 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2017 | 26 | 2017 |
| Demonstration of 30 GHz OIP3/PDC> 10 dB by mm-wave N-polar deep recess MISHEMTs M Guidry, B Romanczyk, H Li, E Ahmadi, S Wienecke, X Zheng, S Keller, ... 2019 14th European Microwave Integrated Circuits Conference (EuMIC), 64-67, 2019 | 25 | 2019 |
| Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High X Zheng, H Li, M Guidry, B Romanczyk, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 39 (3), 409-412, 2018 | 24 | 2018 |
| Record 34.2% efficient mm‐wave N‐polar AlGaN/GaN MISHEMT at 87 GHz B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ... Electronics Letters 52 (21), 1813-1814, 2016 | 24 | 2016 |
| W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width M Guidry, S Wienecke, B Romanczyk, X Zheng, H Li, E Ahmadi, ... 2016 87th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2016 | 24 | 2016 |
| 1200V GaN switches on sapphire substrate G Gupta, M Kanamura, B Swenson, D Bisi, B Romanczyk, C Neufeld, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 20 | 2022 |
| Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures D Bisi, S Wienecke, B Romanczyk, H Li, E Ahmadi, S Keller, M Guidry, ... IEEE Electron Device Letters 41 (3), 345-348, 2020 | 19 | 2020 |
| InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays S Keller, C Lund, T Whyland, Y Hu, C Neufeld, S Chan, S Wienecke, F Wu, ... Semiconductor Science and Technology 30 (10), 105020, 2015 | 17 | 2015 |
| In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge X Liu, J Kim, DJ Suntrup, S Wienecke, M Tahhan, R Yeluri, SH Chan, J Lu, ... Applied Physics Letters 104 (26), 2014 | 17 | 2014 |
