Prati
Ravindra Nuggehalli
Ravindra Nuggehalli
Professor, Department of Physics, New Jersey Institute of Technology
Potvrđena adresa e-pošte na njit.edu
Naslov
Citirano
Citirano
Godina
Temperature dependence of solar cell performance—an analysis
P Singh, NM Ravindra
Solar energy materials and solar cells 101, 36-45, 2012
10102012
Energy gap–refractive index relations in semiconductors–An overview
NM Ravindra, P Ganapathy, J Choi
Infrared physics & technology 50 (1), 21-29, 2007
5162007
On the Penn gap in semiconductors
NM Ravindra, S Auluck, VK Srivastava
Physica status solidi (b) 93 (2), K155-K160, 1979
4931979
Comments on the moss formula
VP Gupta, NM Ravindra
physica status solidi (b) 100 (2), 715-719, 1980
3201980
Model based studies of some optical and electronic properties of narrow and wide gap materials
NM Ravindra, RP Bhardwaj, KS Kumar, VK Srivastava
Infrared Physics 21 (6), 369-381, 1981
1611981
Variation of refractive index with energy gap in semiconductors
NM Ravindra, VK Srivastava
Infrared Physics 19 (5), 603-604, 1979
1581979
Emissivity measurements and modeling of silicon-related materials: an overview
NM Ravindra, B Sopori, OH Gokce, SX Cheng, A Shenoy, L Jin, ...
International journal of thermophysics 22, 1593-1611, 2001
1472001
Electronic polarizability as a function of the penn gap in semiconductors
NM Ravindra, VK Srivastava
Infrared Physics 20 (1), 67-69, 1980
1371980
Temperature-dependent emissivity of silicon-related materials and structures
NM Ravindra, S Abedrabbo, W Chen, FM Tong, AK Nanda, AC Speranza
IEEE Transactions on semiconductor manufacturing 11 (1), 30-39, 1998
1221998
Optical properties of vanadium oxides-an analysis
C Lamsal, NM Ravindra
Journal of materials science 48, 6341-6351, 2013
1172013
Light emission from silicon: Some perspectives and applications
AT Fiory, NM Ravindra
Journal of Electronic Materials 32, 1043-1051, 2003
1132003
Fowler-Nordheim tunneling in thin SiO2 films
NM Ravindra, J Zhao
Smart Materials and Structures 1 (3), 197, 1992
1081992
Temperature dependence of the energy gap in semiconductors
NM Ravindra, VK Srivastava
Journal of Physics and chemistry of Solids 40 (10), 791-793, 1979
1081979
Carrier concentration tuning of bandgap-reduced p-type ZnO films by codoping of Cu and Ga for improving photoelectrochemical response
S Shet, KS Ahn, Y Yan, T Deutsch, KM Chrustowski, J Turner, ...
Journal of Applied Physics 103 (7), 2008
882008
Metallurgical and mechanical evaluation of 4340 steel produced by direct metal laser sintering
E Jelis, M Clemente, S Kerwien, NM Ravindra, MR Hespos
Jom 67, 582-589, 2015
842015
Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties
B Sopori, Y Zhang, NM Ravindra
Journal of Electronic Materials 30, 1616-1627, 2001
782001
Optical properties of GeO 2
NM Ravindra, RA Weeks, DL Kinser
Physical Review B 36 (11), 6132, 1987
751987
Synthesis and characterization of band gap-reduced ZnO: N and ZnO:(Al, N) films for photoelectrochemical water splitting
S Shet, KS Ahn, T Deutsch, H Wang, N Ravindra, Y Yan, J Turner, ...
Journal of Materials Research 25 (1), 69-75, 2010
722010
Electronic and optical properties of Cu2ZnGeX4 (X= S, Se and Te) quaternary semiconductors
D Chen, NM Ravindra
Journal of alloys and compounds 579, 468-472, 2013
662013
Influence of gas ambient on the synthesis of co-doped ZnO:(Al, N) films for photoelectrochemical water splitting
S Shet, KS Ahn, T Deutsch, H Wang, R Nuggehalli, Y Yan, J Turner, ...
Journal of Power Sources 195 (17), 5801-5805, 2010
632010
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