| Superhydrophobic wind turbine blade surfaces obtained by a simple deposition of silica nanoparticles embedded in epoxy R Karmouch, GG Ross Applied Surface Science 257 (3), 665-669, 2010 | 133 | 2010 |
| Experimental study on the evolution of contact angles with temperature near the freezing point R Karmouch, GG Ross The Journal of Physical Chemistry C 114 (9), 4063-4066, 2010 | 127 | 2010 |
| Icephobic PTFE coatings for wind turbines operating in cold climate conditions R Karmouch, S Coudé, G Abel, GG Ross 2009 IEEE Electrical Power & Energy Conference (EPEC), 1-6, 2009 | 38 | 2009 |
| Dependence of the structural relaxation of amorphous silicon on implantation temperature JF Mercure, R Karmouch, Y Anahory, S Roorda, F Schiettekatte Physical Review B 71 (13), 134205, 2005 | 38 | 2005 |
| Solar cells performance reduction under the effect of dust in Jazan Region R Karmouch, HEL Hor J. Fundam. Renew. Energy Appl 7 (2), 1-4, 2017 | 35 | 2017 |
| Damage evolution in low-energy ion implanted silicon R Karmouch, Y Anahory, JF Mercure, D Bouilly, M Chicoine, G Bentoumi, ... Physical Review B 75 (7), 075304, 2007 | 32 | 2007 |
| Recent development of aqueous zinc‐ion battery cathodes and future challenges U Fegade, G Jethave, F Khan, A Al‐Ahmed, R Karmouch, M Shariq, ... International Journal of Energy Research 46 (10), 13152-13177, 2022 | 21 | 2022 |
| Fabrication, characterization and modeling of single-crystal thin film calorimeter sensors Y Anahory, M Guihard, D Smeets, R Karmouch, F Schiettekatte, ... Thermochimica acta 510 (1-2), 126-136, 2010 | 20 | 2010 |
| Nanocalorimeter fabrication procedure and data analysis for investigations on implantation damage annealing R Karmouch, JF Mercure, F Schiettekatte Thermochimica acta 432 (2), 186-191, 2005 | 18 | 2005 |
| Concentration and ion-energy-independent annealing kinetics during ion-implanted-defect annealing R Karmouch, JF Mercure, Y Anahory, F Schiettekatte Applied Physics Letters 86 (3), 2005 | 15 | 2005 |
| Radiation damage in silicon studied in situ by nanocalorimetry JF Mercure, R Karmouch, Y Anahory, S Roorda, F Schiettekatte Physica B: Condensed Matter 340, 622-625, 2003 | 12 | 2003 |
| Phase transition in thermochromic VO2 coatings grown by ac dual magnetron cathode sputtering M Soltani, ST Bah, R Karmouch, M Gaidi, R Vallée Journal of Materials Science: Materials in Electronics 30, 20043-20049, 2019 | 6 | 2019 |
| Investigation of electrical and optical measurements of silicon nanocrystals embedded in SiO2 matrix R Karmouch, G Savard, D Barba, D Koshel, F Martin, GG Ross Journal of Materials Science: Materials in Electronics 24, 1837-1841, 2013 | 4 | 2013 |
| Damage annealing process in implanted poly-silicon studied by nanocalorimetry: Effects of heating rate and beam flux R Karmouch, JF Mercure, Y Anahory, F Schiettekatte Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2005 | 4 | 2005 |
| Rare earth based Mg-chalcogenides MgDy2 (S/Se) 4 as an emerging aspirant for spintronic and thermoelectric applications G Nazir, AS Alofi, A Rehman, Q Mahmood, M mana AL-Anazy, ... Materials Science in Semiconductor Processing 173, 108129, 2024 | 3 | 2024 |
| Silicon nanocrystals. From synthesis to applications R Karmouch Int J Engine Res 7, 1498-526, 2016 | 2 | 2016 |
| Nanocalorimetric investigation of light-induced metastable defects in hydrogenated amorphous silicon J Zikovsky, L MacQueen, A Yelon, E Sacher, JF Mercure, R Karmouch Journal of non-crystalline solids 351 (46-48), 3630-3633, 2005 | 2 | 2005 |
| Photodeterioration and recovery treatment for silicon nanocrystal luminescence R Karmouch, D Barba, D Koshel, F Martin, GG Ross Photonics North 2011 8007, 311-318, 2011 | 1 | 2011 |
| Étude de l'évolution thermique du dommage d'implantation dans le silicium par nanocalorimétrie R Karmouch | 1 | 2006 |
| Corrigendum to “Rare earth based Mg-chalcogenides MgDy2 (S/Se) 4 as an emerging aspirant for spintronic and thermoelectric applications”[Mater. Sci. Semicond. Process. 173 … G Nazir, AS Alofi, A Rehman, Q Mahmood, M mana AL-Anazy, ... Materials Science in Semiconductor Processing, 108239, 2024 | | 2024 |
