Prati
Jessica Maclean
Jessica Maclean
Senior Research Scientist, National Physical Laboratory, UK
Potvrđena adresa e-pošte na nottingham.ac.uk
Naslov
Citirano
Citirano
Godina
Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices
MTKM Sarua, Andrei, Ji H., Hilton K. P., Wallis D. J., Uren M. J.
IEEE Transactions on Electron Devices [0018-9383] 54 (12), 3152, 2007
354*2007
Dilute nitride semiconductors
M Henini
Elsevier ISBN 0-08-044502-0, 2005
3122005
Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy
M Kuball, GJ Riedel, JW Pomeroy, A Sarua, MJ Uren, T Martin, KP Hilton, ...
IEEE electron device letters 28 (2), 86-89, 2007
1712007
Analysis of DC–RF dispersion in AlGaN/GaN HFETs using RF waveform engineering
C Roff, J Benedikt, PJ Tasker, DJ Wallis, KP Hilton, JO Maclean, ...
IEEE Transactions on Electron Devices 56 (1), 13-19, 2008
1122008
Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers
GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ...
IEEE Electron Device Letters 30 (2), 103-106, 2008
982008
Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices
GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ...
IEEE Electron Device Letters 29 (5), 416-418, 2008
622008
Control of short-channel effects in GaN/AlGaN HFETs
MJ Uren, DG Hayes, RS Balmer, DJ Wallis, KP Hilton, JO Maclean, ...
2006 European Microwave Integrated Circuits Conference, 65-68, 2006
522006
X-band GaN SPDT MMIC with over 25 watt linear power handling
J Janssen, KP Hilton, JO Maclean, DJ Wallis, J Powell, M Uren, T Martin, ...
2008 European Microwave Integrated Circuit Conference, 190-193, 2008
352008
Evidence for selective delocalization of N-pair states in dilute GaAs 1− x N x
BA Weinstein, SR Stambach, TM Ritter, JO Maclean, DJ Wallis
Physical Review B 68 (3), 035336, 2003
292003
Nitrogen incorporation into GaAs (N), Al0. 3Ga0. 7As (N) and In0. 15Ga0. 85As (N) by chemical beam epitaxy (CBE) using 1, 1-dimethylhydrazine
JO Maclean, DJ Wallis, T Martin, MR Houlton, AJ Simons
Journal of crystal growth 231 (1-2), 31-40, 2001
172001
Detailed analysis of DC-RF dispersion in AlGaN/GaN HFETs using waveform measurements
C Roff, P McGovern, J Benedikt, PJ Tasker, RS Balmer, DJ Wallis, ...
2006 European Microwave Integrated Circuits Conference, 43-45, 2006
162006
High-performance InSb based quantum well field effect transistors for low-power dissipation applications
T Ashley, MT Emeny, DG Hayes, KP Hilton, R Jefferies, JO Maclean, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
152009
Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run
RS Balmer, JM Heaton, JO Maclean, SG Ayling, JP Newey, M Houlton, ...
Journal of lightwave technology 21 (1), 211, 2003
152003
The UK National Quantum Technology Hub in Sensors and Metrology
SPIE Europe - Quantum Optics, Ed. Jurgen Stuhler, Andrew J. Shields 9900 …, 2016
14*2016
Laser Drilling of Microholes in Single Crystal Silicon Using Continuous Wave (CW) 1070 nm Fiber Lasers with Millisecond Pulse Widths.
JO Maclean, JR Hodson, C Tangkijcharoenchai, S Al-Ojaili, S Rodsavas, ...
Lasers in Engineering (Old City Publishing) 39, 53-65, 2018
102018
The sputter deposition of cerium oxide thin films for superconducting electronics
JM Owens, EJ Tarte, P Berghuis, RE Somekh
IEEE Transactions on Applied Superconductivity 5 (2), 1657 - 1660, 1995
101995
Stress and microstructure of diamond-like carbon from ion-beam decomposition of hydrocarbon precursors
AM Jones, CJ Bedell, G Dearnaley, C Johnston, JM Owens
Diamond and Related Materials 1 (5-6), 416-421, 1992
101992
Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy
JO Maclean, T Martin, MR Houlton, PDJ Calcott, SG Ayling, KP Hilton, ...
Applied Physics Letters 80 (6), 914-916, 2002
62002
Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)
RS Balmer, T Martin, MJ Kane, JO Maclean, TJ Whitaker, SG Ayling, ...
Journal of Crystal Growth 209 (2-3), 486-491, 2000
62000
isense: A technology platform for cold atom based quantum technologies
K Bongs, J Malcolm, C Ramelloo, L Zhu, V Boyer, T Valenzuela, ...
Quantum Information and Measurement, QTu3B. 1, 2014
52014
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