Anil W. Dey
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Effects of crystal phase mixing on the electrical properties of InAs nanowires
C Thelander, P Caroff, S Plissard, AW Dey, KA Dick
Nano letters 11 (6), 2424-2429, 2011
Growth mechanism of self-catalyzed group III− V nanowires
B Mandl, J Stangl, E Hilner, AA Zakharov, K Hillerich, AW Dey, ...
Nano letters 10 (11), 4443-4449, 2010
High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors
AW Dey, BM Borg, B Ganjipour, M Ek, KA Dick, E Lind, C Thelander, ...
IEEE Electron device letters 34 (2), 211-213, 2013
Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz
M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ...
Nano Letters 10 (3), 809-812, 2010
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
B Ganjipour, AW Dey, BM Borg, M Ek, ME Pistol, KA Dick, LE Wernersson, ...
Nano letters 11 (10), 4222-4226, 2011
Single InAs/GaSb nanowire low-power CMOS inverter
AW Dey, J Svensson, BM Borg, M Ek, LE Wernersson
Nano letters 12 (11), 5593-5597, 2012
III–V nanowire complementary metal–oxide semiconductor transistors monolithically integrated on Si
J Svensson, AW Dey, D Jacobsson, LE Wernersson
Nano letters 15 (12), 7898-7904, 2015
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
AW Dey, J Svensson, M Ek, E Lind, C Thelander, LE Wernersson
Nano letters 13 (12), 5919-5924, 2013
High-performance inas nanowire mosfets
AW Dey, C Thelander, E Lind, KA Dick, BM Borg, M Borgstrom, P Nilsson, ...
IEEE Electron Device Letters 33 (6), 791-793, 2012
III-V heterostructure nanowire tunnel FETs
E Lind, E Memi╣eviŠ, AW Dey, LE Wernersson
IEEE Journal of the Electron Devices Society 3 (3), 96-102, 2015
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
B Mandl, AW Dey, J Stangl, M Cantoro, LE Wernersson, G Bauer, ...
Journal of crystal growth 334 (1), 51-56, 2011
Low-frequency noise in vertical InAs nanowire FETs
KM Persson, E Lind, AW Dey, C Thelander, H Sj÷land, LE Wernersson
IEEE Electron Device Letters 31 (5), 428-430, 2010
Formation of the axial heterojunction in GaSb/InAs (Sb) nanowires with high crystal quality
M Ek, BM Borg, AW Dey, B Ganjipour, C Thelander, LE Wernersson, ...
Crystal growth & design 11 (10), 4588-4593, 2011
Influence of doping on the electronic transport in GaSb/InAs (Sb) nanowire tunnel devices
BM Borg, M Ek, B Ganjipour, AW Dey, KA Dick, LE Wernersson, ...
Applied Physics Letters 101 (4), 2012
Electrical properties of GaSb/InAsSb core/shell nanowires
B Ganjipour, S Sepehri, AW Dey, O Tizno, BM Borg, KA Dick, ...
Nanotechnology 25 (42), 425201, 2014
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
B Mattias Borg, M Ek, KA Dick, B Ganjipour, AW Dey, C Thelander, ...
Applied Physics Letters 99 (20), 2011
High current density InAsSb/GaSb tunnel field effect transistors
A Dey, M Borg, B Ganjipour, M Ek, KD Thelander, E Lind, P Nilsson, ...
70th Annual Device Research Conference (DRC), 205-206, 2012
High frequency performance of vertical InAs nanowire MOSFET
E Lind, M Egard, S Johansson, AC Johansson, BM Borg, C Thelander, ...
2010 22nd International Conference on Indium Phosphide and Related Materialsá…, 2010
Radial nanowire Esaki diode devices and methods
LE Wernersson, E Lind, J Ohlsson, L Samuelson, M Bjork, C Thelander, ...
US Patent 10,090,292, 2018
GaSb nanowire pFETs for III-V CMOS
AW Dey, J Svensson, BM Borg, M Ek, E Lind, LE Wernersson
71st Device Research Conference, 13-14, 2013
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