Mattias Borg
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Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si
H Schmid, M Borg, K Moselund, L Gignac, CM Breslin, J Bruley, D Cutaia, ...
Applied Physics Letters 106 (23), 2015
High‐quality InAs/InSb nanowire heterostructures grown by metal–organic vapor‐phase epitaxy
P Caroff, JB Wagner, KA Dick, HA Nilsson, M Jeppsson, K Deppert, ...
Small 4 (7), 878-882, 2008
InAs/GaSb heterostructure nanowires for tunnel field-effect transistors
BM Borg, KA Dick, B Ganjipour, ME Pistol, LE Wernersson, C Thelander
Nano letters 10 (10), 4080-4085, 2010
Controlling the abruptness of axial heterojunctions in III–V nanowires: beyond the reservoir effect
KA Dick, J Bolinsson, BM Borg, J Johansson
Nano letters 12 (6), 3200-3206, 2012
Vertical III–V nanowire device integration on Si (100)
M Borg, H Schmid, KE Moselund, G Signorello, L Gignac, J Bruley, ...
Nano letters 14 (4), 1914-1920, 2014
InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch
P Caroff, ME Messing, BM Borg, KA Dick, K Deppert, LE Wernersson
Nanotechnology 20 (49), 495606, 2009
Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors
J Svensson, N Anttu, N Vainorius, BM Borg, LE Wernersson
Nano letters 13 (4), 1380-1385, 2013
High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors
AW Dey, BM Borg, B Ganjipour, M Ek, KA Dick, E Lind, C Thelander, ...
IEEE Electron device letters 34 (2), 211-213, 2013
Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz
M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ...
Nano Letters 10 (3), 809-812, 2010
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
B Ganjipour, AW Dey, BM Borg, M Ek, ME Pistol, KA Dick, LE Wernersson, ...
Nano letters 11 (10), 4222-4226, 2011
Synthesis and properties of antimonide nanowires
BM Borg, LE Wernersson
Nanotechnology 24 (20), 202001, 2013
GaAs/GaSb nanowire heterostructures grown by MOVPE
M Jeppsson, KA Dick, JB Wagner, P Caroff, K Deppert, L Samuelson, ...
Journal of Crystal Growth 310 (18), 4115-4121, 2008
Single InAs/GaSb nanowire low-power CMOS inverter
AW Dey, J Svensson, BM Borg, M Ek, LE Wernersson
Nano letters 12 (11), 5593-5597, 2012
High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET
M Egard, L Ohlsson, BM Borg, F Lenrick, R Wallenberg, LE Wernersson, ...
2011 International Electron Devices Meeting, 13.2. 1-13.2. 4, 2011
Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
V Favre-Nicolin, F Mastropietro, J Eymery, D Camacho, YM Niquet, ...
New Journal of Physics 12 (3), 035013, 2010
Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps
S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk
IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016
High-performance inas nanowire mosfets
AW Dey, C Thelander, E Lind, KA Dick, BM Borg, M Borgstrom, P Nilsson, ...
IEEE Electron Device Letters 33 (6), 791-793, 2012
High-Frequency Performance of Self-Aligned Gate-Last Surface ChannelMOSFET
M Egard, L Ohlsson, M Arlelid, KM Persson, BM Borg, F Lenrick, ...
IEEE Electron Device Letters 33 (3), 369-371, 2012
Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
BM Borg, KA Dick, J Eymery, LE Wernersson
Applied Physics Letters 98 (11), 2011
Extrinsic and intrinsic performance of vertical InAs nanowire MOSFETs on Si substrates
KM Persson, M Berg, MB Borg, J Wu, S Johansson, J Svensson, ...
IEEE Transactions on Electron Devices 60 (9), 2761-2767, 2013
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