| Zero-mask contact fuse for one-time-programmable memory in standard CMOS processes M Shi, J He, L Zhang, C Ma, X Zhou, H Lou, H Zhuang, R Wang, Y Li, ... IEEE electron device letters 32 (7), 955-957, 2011 | 104 | 2011 |
| A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body F Liu, J He, L Zhang, J Zhang, J Hu, C Ma, M Chan IEEE Transactions on Electron Devices 55 (8), 2187-2194, 2008 | 98 | 2008 |
| Universal NBTI compact model for circuit aging simulation under any stress conditions C Ma, HJ Mattausch, K Matsuzawa, S Yamaguchi, T Hoshida, M Imade, ... IEEE Transactions on Device and Materials Reliability 14 (3), 818-825, 2014 | 57 | 2014 |
| Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET L Zhang, C Ma, J He, X Lin, M Chan Solid-state electronics 54 (8), 806-808, 2010 | 52 | 2010 |
| Compact reliability model for degradation of advanced p-MOSFETs due to NBTI and hot-carrier effects in the circuit simulation C Ma, HJ Mattausch, M Miyake, T Iizuka, M Miura-Mattausch, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 2A. 3.1-2A. 3.6, 2013 | 38 | 2013 |
| ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors C Ma, H Chen, C Zhou, S Huang, L Yuan, J Roberts, K Chen Journal of applied physics 110 (11), 2011 | 23 | 2011 |
| FinFET: From compact modeling to circuit performance F He, X Zhou, C Ma, J Zhang, Z Liu, W Wu, X Zhang, L Zhang 2010 IEEE International Conference of Electron Devices and Solid-State …, 2010 | 17 | 2010 |
| A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection C Ma, L Zhang, C Zhang, X Zhang, J He, X Zhang Microelectronics Reliability 51 (2), 337-341, 2011 | 16 | 2011 |
| A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability C Ma, B Li, L Zhang, J He, X Zhang, X Lin, M Chan 2009 10th International Symposium on Quality Electronic Design, 7-12, 2009 | 16 | 2009 |
| Gate underlap design for short channel effects control in cylindrical gate-all-around MOSFETs based on an analytical model L Zhang, S Wang, C Ma, J He, C Xu, Y Ma, Y Ye, H Liang, Q Chen, ... IETE Technical Review 29 (1), 29-35, 2012 | 15 | 2012 |
| Reliability of enhancement-mode AlGaN/GaN HEMTs under ON-state gate overdrive C Ma, H Chen, C Zhou, S Huang, L Yuan, J Roberts, KJ Chen 2010 International Electron Devices Meeting, 20.4. 1-20.4. 4, 2010 | 14 | 2010 |
| Compact modeling of dynamic MOSFET degradation due to hot-electrons H Tanoue, A Tanaka, Y Oodate, T Nakahagi, D Sugiyama, C Ma, ... IEEE Transactions on Device and Materials Reliability 17 (1), 52-58, 2017 | 9 | 2017 |
| Modeling of NBTI stress induced hole-trapping and interface-state-generation mechanisms under a wide range of bias conditions C Ma, HJ Mattausch, M Miyake, T IIzuka, K Matsuzawa, S Yamaguchi, ... IEICE transactions on electronics 96 (10), 1339-1347, 2013 | 8 | 2013 |
| Study on Transport Characteristics of Silicon-Germanium Nanowire MOSFETs with Core–Shell Structure Y Fu, L Zhang, J He, C Ma, L Chen, Y Xu Journal of Computational and Theoretical Nanoscience 7 (3), 528-535, 2010 | 8 | 2010 |
| A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs H Jin, Z Jian, Z Lining, M Chenyue, C Mansun Journal of Semiconductors 30 (2), 024001, 2009 | 8 | 2009 |
| FinFET reliability study by forward gated-diode generation–recombination current C Ma, B Li, Y Wei, L Zhang, J He, X Zhang, X Lin, M Chan Semiconductor science and technology 23 (7), 075008, 2008 | 8 | 2008 |
| Investigation of the NBTI induced mobility degradation for precise circuit aging simulation C Ma, X Li, F Sun, L Zhang, X Lin 2016 IEEE International Nanoelectronics Conference (INEC), 1-2, 2016 | 7 | 2016 |
| Investigation of nitrogen enhanced NBTI effect using the universal prediction model P Wu, C Ma, L Zhang, X Lin, M Chan 2015 IEEE International Reliability Physics Symposium, XT. 5.1-XT. 5.4, 2015 | 7 | 2015 |
| Universal properties and compact modeling of dynamic hot-electron degradation in n-MOSFETs H Tanoue, A Tanaka, Y Oodate, T Nakahagi, C Ma, M Miyake, ... 2013 IEEE International Reliability Physics Symposium (IRPS), CM. 4.1-CM. 4.6, 2013 | 7 | 2013 |
| A numerical method to simulate THz-wave generation and detection of field-effect transistors X Mou, Y Chen, C Ma, Y Che, J He 2008 9th International Conference on Solid-State and Integrated-Circuit …, 2008 | 7 | 2008 |
