Direct and indirect band-to-band tunneling in germanium-based TFETs KH Kao, AS Verhulst, WG Vandenberghe, B Soree, G Groeseneken, ...
IEEE Transactions on Electron Devices 59 (2), 292-301, 2011
422 2011 Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken
Journal of Applied Physics 107 (2), 024518, 2010
256 2010 Optimization of gate-on-source-only tunnel FETs with counter-doped pockets KH Kao, AS Verhulst, WG Vandenberghe, B Soree, W Magnus, D Leonelli, ...
IEEE Transactions on Electron Devices 59 (8), 2070-2077, 2012
130 2012 Figure of merit for and identification of sub-60 mV/decade devices WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ...
Applied Physics Letters 102 (1), 013510, 2013
114 2013 Impact of field-induced quantum confinement in tunneling field-effect devices WG Vandenberghe, B Sorée, W Magnus, G Groeseneken, MV Fischetti
Applied Physics Letters 98 (14), 143503, 2011
107 2011 Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode B Sorée, W Magnus, G Pourtois
Journal of computational electronics 7, 380-383, 2008
105 2008 Analytical model for a tunnel field-effect transistor WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008
102 2008 Analytical model for point and line tunneling in a tunnel field-effect transistor W Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
2008 international conference on simulation of semiconductor processes and …, 2008
98 2008 Tuning the Fermi Level of SiO2 -Supported Single-Layer Graphene by Thermal Annealing A Nourbakhsh, M Cantoro, A Klekachev, F Clemente, B Soree, ...
The Journal of Physical Chemistry C 114 (15), 6894-6900, 2010
94 2010 Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
79 2011 Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach W Vandenberghe, B Sorée, W Magnus, MV Fischetti
Journal of Applied Physics 109 (12), 124503, 2011
65 2011 InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ...
Journal of Applied Physics 115 (18), 184503, 2014
57 2014 Design and benchmarking of hybrid CMOS-spin wave device circuits compared to 10nm CMOS O Zografos, B Sorée, A Vaysset, S Cosemans, L Amaru, PE Gaillardon, ...
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 686-689, 2015
56 2015 Physical modeling of strain-dependent hole mobility in Ge Y Zhang, MV Fischetti, B Sorée, W Magnus, M Heyns, M Meuris
Journal of applied physics 106 (8), 083704, 2009
48 2009 A model determining optimal doping concentration and material’s band gap of tunnel field-effect transistors WG Vandenberghe, AS Verhulst, KH Kao, KD Meyer, B Sorée, W Magnus, ...
Applied Physics Letters 100 (19), 193509, 2012
45 2012 Temperature-dependent modeling and characterization of through-silicon via capacitance G Katti, M Stucchi, D Velenis, B Soree, K De Meyer, W Dehaene
IEEE Electron Device Letters 32 (4), 563-565, 2011
41 2011 Calculation of the electron mobility in III-V inversion layers with high- TP O’Regan, MV Fischetti, B Soree, S Jin, W Magnus, M Meuris
Journal of Applied Physics 108 (10), 103705, 2010
39 2010 First-principle calculations on gate/dielectric interfaces: on the origin of work function shifts G Pourtois, A Lauwers, J Kittl, L Pantisano, B Sorée, S De Gendt, ...
Microelectronic Engineering 80, 272-279, 2005
39 2005 Micromagnetic simulations of magnetoelastic spin wave excitation in scaled magnetic waveguides R Duflou, F Ciubotaru, A Vaysset, M Heyns, B Sorée, IP Radu, ...
Applied Physics Letters 111 (19), 192411, 2017
36 2017 Zener tunneling in semiconductors under nonuniform electric fields W Vandenberghe, B Sorée, W Magnus, G Groeseneken
Journal of Applied Physics 107 (5), 054520, 2010
36 2010 
William VandenbergheAssociate Professor at U.T. Dallas, dept. Materials Science & EngineeringPotvrđena adresa e-pošte na utdallas.edu
