| Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon E Delli, V Letka, PD Hodgson, E Repiso, JP Hayton, AP Craig, Q Lu, ... ACS Photonics 6 (2), 538-544, 2019 | 69 | 2019 |
| InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000° C Q Lu, X Zhou, A Krysa, A Marshall, P Carrington, CH Tan, A Krier Solar Energy Materials and Solar Cells 179, 334-338, 2018 | 51 | 2018 |
| High-speed mid-wave infrared interband cascade photodetector at room temperature Z Xie, J Huang, X Chai, Z Deng, Y Chen, Q Lu, Z Xu, J Chen, Y Zhou, ... Optics Express 28 (24), 36915-36923, 2020 | 37 | 2020 |
| Monolithic distributed Bragg reflector cavities in Al 2 O 3 with quality factors exceeding 10 6 EH Bernhardi, Q Lu, H Van Wolferen, K Wörhoff, RM De Ridder, ... Photonics and Nanostructures-Fundamentals and Applications 9 (3), 225-234, 2011 | 37 | 2011 |
| InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers Q Lu, Q Zhuang, A Marshall, M Kesaria, R Beanland, A Krier Semiconductor Science and Technology 29 (7), 075011, 2014 | 26 | 2014 |
| Mid-infrared resonant cavity light emitting diodes operating at 4.5 µm FA Al-Saymari, AP Craig, Q Lu, ARJ Marshall, PJ Carrington, A Krier Optics Express 28 (16), 23338-23353, 2020 | 21 | 2020 |
| InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency Y Zhou, Q Lu, X Chai, Z Xu, J Chen, A Krier, L Li He Applied Physics Letters 114 (24), 253507, 2019 | 20 | 2019 |
| Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer Q Lu, R Beanland, D Montesdeoca, PJ Carrington, A Marshall, A Krier Solar Energy Materials and Solar Cells 191, 406-412, 2019 | 20 | 2019 |
| Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon E Delli, PD Hodgson, M Bentley, E Repiso, AP Craig, Q Lu, R Beanland, ... Applied Physics Letters 117 (13), 131103, 2020 | 19 | 2020 |
| GaSb-based solar cells for multi-junction integration on Si substrates J Tournet, S Parola, A Vauthelin, DM Cardenes, S Soresi, F Martinez, ... Solar Energy Materials and Solar Cells 191, 444-450, 2019 | 18 | 2019 |
| Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared JA Keen, E Repiso, Q Lu, M Kesaria, ARJ Marshall, A Krier Infrared Physics & Technology 93, 375-380, 2018 | 15 | 2018 |
| Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells L Tang, C Xu, Z Liu, Q Lu, A Marshall, A Krier Solar Energy Materials and Solar Cells 163, 263-269, 2017 | 12 | 2017 |
| Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers Q Lu, Q Zhuang, A Krier Photonics 2 (2), 414-425, 2015 | 12 | 2015 |
| Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers Q Lu, Q Zhuang, J Hayton, M Yin, A Krier Applied Physics Letters 105 (3), 031115, 2014 | 12 | 2014 |
| Optical properties of metamorphic type-I InAs1− x Sb x/Al y In1− y As quantum wells grown on GaAs for the mid-infrared spectral range E Repiso, CA Broderick, M de la Mata, R Arkani, Q Lu, ARJ Marshall, ... Journal of Physics D: Applied Physics 52 (46), 465102, 2019 | 11 | 2019 |
| Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon E Delli, PD Hodgson, E Repiso, AP Craig, JP Hayton, Q Lu, ARJ Marshall, ... IEEE Photonics Journal 11 (3), 1-8, 2019 | 11 | 2019 |
| Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells MC Wagener, D Montesdeoca, Q Lu, ARJ Marshall, A Krier, JR Botha, ... Solar Energy Materials and Solar Cells 189, 233-238, 2019 | 11 | 2019 |
| Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection FA Al-Saymari, AP Craig, YJ Noori, Q Lu, ARJ Marshall, A Krier Applied Physics Letters 114 (17), 171103, 2019 | 10 | 2019 |
| Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications Q Lu, A Marshall, A Krier Materials 12, 1743, 2019 | 8 | 2019 |
| InSb-based quantum dot nanostructures for mid-infrared photonic devices PJ Carrington, E Repiso, Q Lu, H Fujita, ARJ Marshall, Q Zhuang, A Krier Nanophotonic Materials XIII 9919, 99190C, 2016 | 4 | 2016 |
Qiandong ZhuangPhysics Department, Lancaster UniversityPotvrđena adresa e-pošte na lancaster.ac.uk
