Prati
Xiao Sun
Xiao Sun
X.AI, Meta, IBM Yorktown Heights, Yale PhD' 13
Potvrđena adresa e-pošte na us.ibm.com
Naslov
Citirano
Citirano
Godina
Characteristics and mechanism of conduction/set process in TiN∕ ZnO∕ Pt resistance switching random-access memories
N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu
Applied Physics Letters 92, 232112, 2008
4642008
Hybrid 8-bit floating point (HFP8) training and inference for deep neural networks
X Sun, J Choi, CY Chen, N Wang, S Venkataramani, VV Srinivasan, X Cui, ...
Advances in neural information processing systems 32, 2019
1982019
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
N Xu, LF Liu, X Sun, C Chen, Y Wang, DD Han, XY Liu, RQ Han, JF Kang, ...
Semiconductor Science and Technology 23, 075019, 2008
1662008
Ultra-low precision 4-bit training of deep neural networks
X Sun, N Wang, CY Chen, J Ni, A Agrawal, X Cui, S Venkataramani, ...
Advances in Neural Information Processing Systems 33, 1796-1807, 2020
1372020
Resistive Switching in Films for Nonvolatile Memory Application
X Sun, B Sun, L Liu, N Xu, X Liu, R Han, J Kang, G Xiong, TP Ma
Electron Device Letters, IEEE 30 (4), 334-336, 2009
1282009
Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics
N Gong, X Sun, H Jiang, KS Chang-Liao, Q Xia, TP Ma
Applied Physics Letters 112 (26), 2018
972018
Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method
X Sun, OI Saadat, KS Chang-Liao, T Palacios, S Cui, TP Ma
Applied Physics Letters 102 (10), 2013
922013
DLFloat: A 16-b floating point format designed for deep learning training and inference
A Agrawal, SM Mueller, BM Fleischer, X Sun, N Wang, J Choi, ...
2019 IEEE 26th Symposium on Computer Arithmetic (ARITH), 92-95, 2019
842019
Circuitry for ferroelectric FET-based dynamic random access memory and non-volatile memory
X Sun, TP Ma
US Patent 10,127,964, 2018
842018
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, G Brammertz, M Caymax, G Groeseneken, TY Hoffmann, D Lin, ...
Proceedings of the International Symposium on Technology Evolution for …, 2010
822010
9.1 A 7nm 4-core AI chip with 25.6 TFLOPS hybrid FP8 training, 102.4 TOPS INT4 inference and workload-aware throttling
A Agrawal, SK Lee, J Silberman, M Ziegler, M Kang, S Venkataramani, ...
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 144-146, 2021
692021
Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs
X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ...
Nuclear Science, IEEE Transactions on 60 (6), 4074-4079, 2013
692013
RaPiD: AI accelerator for ultra-low precision training and inference
S Venkataramani, V Srinivasan, W Wang, S Sen, J Zhang, A Agrawal, ...
2021 ACM/IEEE 48th Annual International Symposium on Computer Architecture …, 2021
642021
Scalecom: Scalable sparsified gradient compression for communication-efficient distributed training
CY Chen, J Ni, S Lu, X Cui, PY Chen, X Sun, N Wang, S Venkataramani, ...
Advances in Neural Information Processing Systems 33, 13551-13563, 2020
592020
GaSb molecular beam epitaxial growth on p-InP (001) and passivation with in situ deposited Al2O3 gate oxide
C Merckling, X Sun, A Alian, G Brammertz, VV Afanas’ev, TY Hoffmann, ...
Journal of Applied Physics 109, 073719, 2011
552011
Capacitor-based cross-point array for analog neural network with record symmetry and linearity
Y Li, S Kim, X Sun, P Solomon, T Gokmen, H Tsai, S Koswatta, Z Ren, ...
2018 IEEE Symposium on VLSI Technology, 25-26, 2018
492018
Efficient AI system design with cross-layer approximate computing
S Venkataramani, X Sun, N Wang, CY Chen, J Choi, M Kang, A Agarwal, ...
Proceedings of the IEEE 108 (12), 2232-2250, 2020
462020
Three-dimensional ferroelectric FET-based structures
X Sun, TP Ma
US Patent 9,818,848, 2017
432017
Molecular beam deposition of Al2O3 on p-Ge (001)/Ge0. 95Sn0. 05 heterostructure and impact of a Ge-cap interfacial layer
C Merckling, X Sun, Y Shimura, A Franquet, B Vincent, S Takeuchi, ...
Applied Physics Letters 98, 192110, 2011
402011
Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors
IK Samsel, EX Zhang, NC Hooten, ED Funkhouser, WG Bennett, RA Reed, ...
IEEE Transactions on Nuclear Science 60 (6), 4439-4445, 2013
392013
Sustav trenutno ne može provesti ovu radnju. Pokušajte ponovo kasnije.
Članci 1–20