Daniel Jacobsson Madsen
Daniel Jacobsson Madsen
Research Engineer, Centre for Analysis and Synthesis, Lund University
Verified email at - Homepage
Cited by
Cited by
Interface dynamics and crystal phase switching in GaAs nanowires
D Jacobsson, F Panciera, J Tersoff, MC Reuter, S Lehmann, S Hofmann, ...
Nature 531 (7594), 317-322, 2016
A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow
S Lehmann, J Wallentin, D Jacobsson, K Deppert, KA Dick
Nano letters 13 (9), 4099-4105, 2013
III–V nanowire complementary metal–oxide semiconductor transistors monolithically integrated on Si
J Svensson, AW Dey, D Jacobsson, LE Wernersson
Nano letters 15 (12), 7898-7904, 2015
Confinement in thickness-controlled GaAs polytype nanodots
N Vainorius, S Lehmann, D Jacobsson, L Samuelson, KA Dick, ME Pistol
Nano letters 15 (4), 2652-2656, 2015
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
N Vainorius, D Jacobsson, S Lehmann, A Gustafsson, KA Dick, ...
Physical Review B 89 (16), 165423, 2014
Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces
M Hjort, S Lehmann, J Knutsson, R Timm, D Jacobsson, E Lundgren, ...
Nano letters 13 (9), 4492-4498, 2013
Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography
G Otnes, M Heurlin, M Graczyk, J Wallentin, D Jacobsson, A Berg, ...
Nano Research 9, 2852-2861, 2016
In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth
CB Maliakkal, D Jacobsson, M Tornberg, AR Persson, J Johansson, ...
Nature Communications 10 (1), 4577, 2019
Particle-assisted GaxIn1− xP nanowire growth for designed bandgap structures
D Jacobsson, JM Persson, D Kriegner, T Etzelstorfer, J Wallentin, ...
Nanotechnology 23 (24), 245601, 2012
Real-time, in situ, atomic scale observation of soot oxidation
P Toth, D Jacobsson, M Ek, H Wiinikka
Carbon 145, 149-160, 2019
High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires
S Lehmann, D Jacobsson, K Deppert, KA Dick
Nano Research 5 (7), 470-476, 2012
Crystal phase control in GaAs nanowires: opposing trends in the Ga-and As-limited growth regimes
S Lehmann, D Jacobsson, KA Dick
Nanotechnology 26 (30), 301001, 2015
Bending and twisting lattice tilt in strained core–shell nanowires revealed by nanofocused x-ray diffraction
J Wallentin, D Jacobsson, M Osterhoff, MT Borgstrom, T Salditt
Nano Letters 17 (7), 4143-4150, 2017
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
J Wu, BM Borg, D Jacobsson, KA Dick, LE Wernersson
Journal of crystal growth 383, 158-165, 2013
Independent control of nucleation and layer growth in nanowires
CB Maliakkal, EK Mårtensson, MU Tornberg, D Jacobsson, AR Persson, ...
ACS nano 14 (4), 3868-3875, 2020
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
J Wu, AS Babadi, D Jacobsson, J Colvin, S Yngman, R Timm, E Lind, ...
Nano Letters 16 (4), 2418-2425, 2016
GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence
J Bolinsson, M Ek, J Trägårdh, K Mergenthaler, D Jacobsson, ME Pistol, ...
Nano Research 7, 473-490, 2014
Phase transformation in radially merged wurtzite GaAs nanowires
D Jacobsson, F Yang, K Hillerich, F Lenrick, S Lehmann, D Kriegner, ...
Crystal growth & design 15 (10), 4795-4803, 2015
Sn-Seeded GaAs Nanowires as Self-Assembled Radial p–n Junctions
R Sun, D Jacobsson, IJ Chen, M Nilsson, C Thelander, S Lehmann, ...
Nano letters 15 (6), 3757-3762, 2015
Magnetic polarons and large negative magnetoresistance in GaAs nanowires implanted with Mn ions
S Kumar, W Paschoal Jr, A Johannes, D Jacobsson, C Borschel, ...
Nano letters 13 (11), 5079-5084, 2013
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