Prati
Yexin Deng
Yexin Deng
Potvrđena adresa e-pošte na purdue.edu - Početna stranica
Naslov
Citirano
Citirano
Godina
Semiconducting black phosphorus: synthesis, transport properties and electronic applications
H Liu, Y Du, Y Deng, DY Peide
Chemical Society Reviews 44 (9), 2732-2743, 2015
14812015
Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode
Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ...
ACS nano 8 (8), 8292-8299, 2014
12952014
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ...
Nature Communications 6, 8572, 2015
6912015
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling
Y Du, H Liu, Y Deng, PD Ye
ACS nano 8 (10), 10035-10042, 2014
4802014
Switching mechanism in single-layer molybdenum disulfide transistors: An insight into current flow across Schottky barriers
H Liu, M Si, Y Deng, AT Neal, Y Du, S Najmaei, PM Ajayan, J Lou, PD Ye
ACS nano 8 (1), 1031-1038, 2014
2822014
A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations
P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ...
Transactions on Electron Devices, 1-1, 2013
2002013
RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ...
IEEE Transactions on Electron Devices 60 (2), 719-726, 2013
1882013
Design and optimization methodology for 3D RRAM arrays
Y Deng, HY Chen, B Gao, S Yu, SC Wu, L Zhao, B Chen, Z Jiang, X Liu, ...
2013 IEEE International Electron Devices Meeting, 25.7. 1-25.7. 4, 2013
622013
3D vertical RRAM-scaling limit analysis and demonstration of 3D array operation
S Yu, HY Chen, Y Deng, B Gao, Z Jiang, J Kang, HSP Wong
2013 Symposium on VLSI Technology, T158-T159, 2013
622013
A physical based analytic model of RRAM operation for circuit simulation
P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ...
2012 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2012
592012
Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory
HY Chen, S Yu, B Gao, R Liu, Z Jiang, Y Deng, B Chen, J Kang, ...
Nanotechnology 24 (46), 465201, 2013
342013
Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect
B Chen, JF Kang, B Gao, YX Deng, LF Liu, XY Liu, Z Fang, HY Yu, ...
Electron Device Letters, IEEE, 1-1, 2013
342013
Design guidelines for 3D RRAM cross-point architecture
S Yu, Y Deng, B Gao, P Huang, B Chen, X Liu, J Kang, HY Chen, Z Jiang, ...
2014 IEEE International Symposium on Circuits and Systems (ISCAS), 421-424, 2014
242014
Ultrafast Laser‐Shock‐Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films
G Qiu, Q Nian, M Motlag, S Jin, B Deng, Y Deng, AR Charnas, PD Ye, ...
Advanced Materials 30 (10), 1704405, 2018
212018
ACS Nano 8, 8292 (2014)
Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ...
Crossref, ISI, 0
21
Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays
N Xu, J Wang, Y Deng, Y Lu, B Fu, W Choi, U Monga, J Jeon, J Kim, ...
2016 IEEE International Electron Devices Meeting (IEDM), 7.7. 1-7.7. 4, 2016
182016
Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts
Y Deng, NJ Conrad, Z Luo, H Liu, X Xu, PD Ye
IEEE International Electron Device Meeting (IEDM), 2014, 2014
182014
Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning
A Ng, TE Sutto, BR Matis, Y Deng, PD Ye, RM Stroud, TH Brintlinger, ...
Nanotechnology 28 (15), 155601, 2017
142017
Optimization of conductive filament of oxide-based resistive-switching random access memory for low operation current by stochastic simulation
P Huang, Y Deng, B Gao, B Chen, F Zhang, D Yu, L Liu, G Du, J Kang, ...
Japanese Journal of Applied Physics 52 (4S), 04CD04, 2013
112013
Multi-level Resistive Switching Characteristics Correlated With Microscopic Filament Geometry in TMO-RRAM
B Chen, JF Kang, P Huang, YX Deng, B Gao, R Liu, FF Zhang, LF Liu, ...
VLSI-TSA, 2013
72013
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