Prati
Youseung Lee
Youseung Lee
Integrated Systems Laboratory, ETH Zurich
Potvrđena adresa e-pošte na iis.ee.ethz.ch
Naslov
Citirano
Citirano
Godina
Efficient quantum modeling of inelastic interactions in nanodevices
Y Lee, M Lannoo, N Cavassilas, M Luisier, M Bescond
Physical Review B 93 (20), 205411, 2016
222016
Ab initio mobility of single-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics
Y Lee, S Fiore, M Luisier
2019 IEEE International Electron Devices Meeting (IEDM), 24.4. 1-24.4. 4, 2019
162019
Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport
Y Lee, M Bescond, N Cavassilas, D Logoteta, L Raymond, M Lannoo, ...
Physical Review B 95 (20), 201412, 2017
162017
Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport: An efficient quantum treatment
Y Lee, M Bescond, D Logoteta, N Cavassilas, M Lannoo, M Luisier
Physical Review B 97 (20), 205447, 2018
152018
Dual-Gated WTe2/MoSe2 van der Waals Tandem Solar Cells
N Cavassilas, D Logoteta, Y Lee, F Michelini, M Lannoo, M Bescond, ...
The Journal of Physical Chemistry C 122 (50), 28545-28549, 2018
132018
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions
D Logoteta, J Cao, M Pala, P Dollfus, Y Lee, G Iannaccone
Physical Review Research 2 (4), 043286, 2020
122020
Quantum treatment of inelastic interactions for the modeling of nanowire field-effect transistors
Y Lee, D Logoteta, N Cavassilas, M Lannoo, M Luisier, M Bescond
Materials 13 (1), 60, 2019
52019
Impact of Orientation Misalignments on Black Phosphorus Ultrascaled Field-Effect Transistors
C Klinkert, S Fiore, J Backman, Y Lee, M Luisier
IEEE Electron Device Letters 42 (3), 434-437, 2021
22021
Efficient partitioning of surface Green’s function: toward ab initio contact resistance study.
G Gandus, Y Lee, D Passerone, M Luisier
2020 International Conference on Simulation of Semiconductor Processes and …, 2020
12020
Efficient and accurate defect level modelling in monolayer MoS2 via GW+ DFT with open boundary conditions
G Gandus, Y Lee, L Deuschle, D Passerone, M Luisier
Solid-State Electronics, 108499, 2022
2022
Dynamics of van der Waals charge qubit in two-dimensional bilayer materials: Ab initio quantum transport and qubit measurement
J Cao, G Gandus, T Agarwal, M Luisier, Y Lee
Physical Review Research 4 (4), 043073, 2022
2022
Dynamics of van der waals charge qubit in 2D bilayers: ab initio quantum transport and qubit measurement
J Cao, G Gandus, T Agarwal, M Luisier, Y Lee
arXiv preprint arXiv:2210.07350, 2022
2022
Electron–phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS2 mobility
J Backman, Y Lee, M Luisier
Solid-State Electronics, 108461, 2022
2022
2-D Materials Modelling: from Transistors to Majorana Fermions
M Luisier, C Klinkert, Y Lee, D Campi, N Marzari
Bulletin of the American Physical Society, 2022
2022
Circuit-aware Device Modeling of Energy-efficient Monolayer WS Trench-FinFETs
T Agarwal, Y Lee, M Luisier
arXiv preprint arXiv:2104.07891, 2021
2021
Ab initio modeling framework for Majorana transport in 2D materials: towards topological quantum computing
Y Lee, T Agarwal, M Luisier
2020 IEEE International Electron Devices Meeting (IEDM), 30.3. 1-30.3. 4, 2020
2020
Challenges and Opportunities in the Modeling of Novels Devices and Materials for Logic Applications
M Luisier, A Szabo, C Klinkert, C Stieger, M Rau, T Agarwal, Y Lee
ECS Meeting Abstracts, 1182, 2019
2019
Dual-Gated WTe₂/MoSe₂ van der Waals Tandem Solar Cells
N Cavassilas, D Logoteta, Y Lee, F Michelini, M Lannoo, M Bescond, ...
2018
Traitement quantique original des interactions inélastiques pour la modélisation atomistique du transport dans les nano-structures tri-dimensionnelles
Y Lee
Aix-Marseille, 2017
2017
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