Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby F Habel, F Scholz, B Neubert, P Brückner, T Wunderer US Patent 7,727,332, 2010 | 437 | 2010 |
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 383 | 2020 |
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells JE Northrup, CL Chua, Z Yang, T Wunderer, M Kneissl, NM Johnson, ... Applied Physics Letters 100 (2), 2012 | 197 | 2012 |
Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates T Wunderer, CL Chua, Z Yang, JE Northrup, NM Johnson, GA Garrett, ... Applied Physics Express 4 (9), 092101, 2011 | 127 | 2011 |
Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks J Hertkorn, F Lipski, P Brückner, T Wunderer, SB Thapa, F Scholz, ... Journal of Crystal Growth 310 (23), 4867-4870, 2008 | 110 | 2008 |
Differential phase contrast 2.0—Opening new “fields” for an established technique M Lohr, R Schregle, M Jetter, C Wächter, T Wunderer, F Scholz, J Zweck Ultramicroscopy 117, 7-14, 2012 | 106 | 2012 |
Optically pumped UV lasers grown on bulk AlN substrates T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ... physica status solidi c 9 (3‐4), 822-825, 2012 | 94 | 2012 |
Optimization of nucleation and buffer layer growth for improved GaN quality J Hertkorn, P Brückner, SB Thapa, T Wunderer, F Scholz, M Feneberg, ... Journal of Crystal Growth 308 (1), 30-36, 2007 | 89 | 2007 |
Piezoelectric fields in GaInN∕ GaN quantum wells on different crystal facets M Feneberg, F Lipski, R Sauer, K Thonke, T Wunderer, B Neubert, ... Applied Physics Letters 89 (24), 2006 | 89 | 2006 |
Bright semipolar GaInN∕ GaN blue light emitting diode on side facets of selectively grown GaN stripes T Wunderer, P Brückner, B Neubert, F Scholz, M Feneberg, F Lipski, ... Applied physics letters 89 (4), 2006 | 85 | 2006 |
Three‐dimensional GaN for semipolar light emitters T Wunderer, M Feneberg, F Lipski, J Wang, RAR Leute, S Schwaiger, ... physica status solidi (b) 248 (3), 549-560, 2011 | 83 | 2011 |
Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters B Cheng, S Choi, JE Northrup, Z Yang, C Knollenberg, M Teepe, ... Applied Physics Letters 102 (23), 2013 | 72 | 2013 |
basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band I Tischer, M Feneberg, M Schirra, H Yacoub, R Sauer, K Thonke, ... Physical Review B 83 (3), 035314, 2011 | 64 | 2011 |
Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction JE Northrup, C Chua, M Kneissl, T Wunderer, NM Johnson US Patent 9,252,329, 2016 | 49 | 2016 |
Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions B Neuschl, K Thonke, M Feneberg, R Goldhahn, T Wunderer, Z Yang, ... Applied Physics Letters 103 (12), 2013 | 49 | 2013 |
Growth and coalescence behavior of semipolar (11̄22) GaN on pre‐structured r‐plane sapphire substrates S Schwaiger, S Metzner, T Wunderer, I Argut, J Thalmair, F Lipski, ... physica status solidi (b) 248 (3), 588-593, 2011 | 49 | 2011 |
Shroud for disk drive with particulate filter elements GJ Smith US Patent 6,654,201, 2003 | 48* | 2003 |
P-side layers for short wavelength light emitters JE Northrup, B Cheng, CL Chua, T Wunderer, NM Johnson, Z Yang US Patent 9,401,452, 2016 | 47 | 2016 |
Planar semipolar (101¯ 1) GaN on (112¯ 3) sapphire S Schwaiger, I Argut, T Wunderer, R Rösch, F Lipski, J Biskupek, U Kaiser, ... Applied Physics Letters 96 (23), 2010 | 44 | 2010 |
Polarized light emission from semipolar GaInN quantum wells on {11¯ 01} GaN facets M Feneberg, F Lipski, R Sauer, K Thonke, P Brückner, B Neubert, ... Journal of Applied Physics 101 (5), 2007 | 43 | 2007 |