Prati
Gilberto A Umana-Membreno
Gilberto A Umana-Membreno
Potvrđena adresa e-pošte na uwa.edu.au
Naslov
Citirano
Citirano
Godina
60Co gamma irradiation effects on n-GaN Schottky diodes
GA Umana-Membreno, JM Dell, G Parish, BD Nener, L Faraone, ...
Electron Devices, IEEE Transactions on 50 (12), 2326-2334, 2003
112*2003
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances
R Menozzi, GA Umana-Membreno, BD Nener, G Parish, G Sozzi, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 255-264, 2008
1062008
60Co gamma-irradiation-induced defects in n-GaN
GA Umana-Membreno, JM Dell, TP Hessler, BD Nener, G Parish, ...
Applied physics letters 80 (23), 4354-4356, 2002
772002
Mercury (II) selective sensors based on AlGaN/GaN transistors
M Asadnia, M Myers, ND Akhavan, K O'Donnell, GA Umana-Membreno, ...
Analytica Chimica Acta, 2016
592016
Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices
GA Umana-Membreno, B Klein, H Kala, J Antoszewski, N Gautam, ...
Applied Physics Letters 101 (25), 253515-253515-4, 2012
532012
Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors
M Kopytko, J Wróbel, K Jóźwikowski, A Rogalski, J Antoszewski, ...
Journal of Electronic Materials 44 (1), 158-166, 2015
522015
Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy
TB Fehlberg, GA Umana-Membreno, BD Nener, G Parish, CS Gallinat, ...
Japanese journal of applied physics 45, L1090-L1092, 2006
522006
Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
A Podolska, M Kocan, AMG Cabezas, TD Wilson, GA Umana-Membreno, ...
Applied Physics Letters 97 (1), 012108-012108-3, 2010
432010
Electrically active defects in GaN layers grown with and without Fe-doped buffers by metal-organic chemical vapor deposition
GA Umana-Membreno, G Parish, N Fichtenbaum, S Keller, UK Mishra, ...
Journal of Electronic Materials 37 (5), 569-572, 2008
422008
A method of removing the valence band discontinuity in HgCdTe-based nBn detectors
ND Akhavan, GA Umana-Membreno, G Jolley, J Antoszewski, L Faraone
Applied Physics Letters 105 (12), 121110, 2014
402014
Design of band engineered HgCdTe nBn detectors for MWIR and LWIR applications
ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone
IEEE Transactions on Electron Devices 62 (3), 722-728, 2015
352015
Investigation of Multicarrier Transport in LPE-Grown Hg1− x Cd x Te Layers
GA Umana-Membreno, J Antoszewski, L Faraone, EPG Smith, GM Venzor, ...
Journal of Electronic Materials 39 (7), 1023-1029, 2010
352010
Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
M Myers, FLM Khir, A Podolska, GA Umana-Membreno, B Nener, M Baker, ...
Sensors and Actuators B: Chemical 181, 301-305, 2013
342013
High-resolution mobility spectrum analysis of multicarrier transport in advanced infrared materials
J Antoszewski, GA Umana-Membreno, L Faraone
Journal of electronic materials 41 (10), 2816-2823, 2012
332012
Ca2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes
M Asadnia, M Myers, GA Umana-Membreno, TM Sanders, UK Mishra, ...
Analytica Chimica Acta 987, 105-110, 2017
322017
Theoretical Study of midwave infrared HgCdTe nBn detectors operating at elevated temperatures
ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone
Journal of Electronic Materials 44 (9), 3044-3055, 2015
322015
Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe
GA Umana-Membreno, H Kala, J Antoszewski, ZH Ye, WD Hu, RJ Ding, ...
Journal of Electronic Materials 42 (11), 3108-3113, 2013
292013
Phonon limited transport in graphene nanoribbon field effect transistors using full three dimensional quantum mechanical simulation
ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone
Journal of Applied Physics 112 (9), 094505, 2012
282012
Optimization of Superlattice Barrier HgCdTe nBn Infrared Photodetectors Based on an NEGF Approach
ND Akhavan, GA Umana-Membreno, R Gu, J Antoszewski, L Faraone
IEEE Transactions on Electron Devices 65 (2), 591-598, 2018
272018
Annealing of 60 Co gamma radiation-induced damage in n-GaN Schottky barrier diodes
GA Umana-Membreno, JM Dell, G Parish, BD Nener, L Faraone, S Keller, ...
Journal of Applied Physics 101 (5), 054511-054511-8, 2007
262007
Sustav trenutno ne može provesti ovu radnju. Pokušajte ponovo kasnije.
Članci 1–20