Prati
Yue Zhang (张悦)
Yue Zhang (张悦)
Professor, Beihang University, Beijing, China
Potvrđena adresa e-pošte na u-psud.fr - Početna stranica
Naslov
Citirano
Citirano
Godina
Compact modeling of perpendicular-anisotropy CoFeB/MgO magnetic tunnel junctions
Y Zhang, W Zhao, Y Lakys, JO Klein, JV Kim, D Ravelosona, C Chappert
IEEE transactions on Electron devices 59 (3), 819-826, 2012
4012012
Failure and reliability analysis of STT-MRAM
WS Zhao, Y Zhang, T Devolder, JO Klein, D Ravelosona, C Chappert, ...
Microelectronics Reliability 52 (9-10), 1848-1852, 2012
2502012
Low power magnetic full-adder based on spin transfer torque MRAM
E Deng, Y Zhang, J Klein, D Ravelosona, C Chappert, W Zhao
Magnetics, IEEE Transactions on 49 (9), 4982-4987, 2013
1522013
Compact model of dielectric breakdown in spin-transfer torque magnetic tunnel junction
Y Wang, H Cai, LA de Barros Naviner, Y Zhang, X Zhao, E Deng, JO Klein, ...
IEEE Transactions on Electron Devices 63 (4), 1762-1767, 2016
1382016
Perpendicular-magnetic-anisotropy CoFeB racetrack memory
Y Zhang, WS Zhao, D Ravelosona, JO Klein, JV Kim, C Chappert
Journal of Applied Physics 111 (9), 2012
1382012
Ultra Low Power Magnetic Flip-Flop Based on Checkpointing/Power Gating and Self-Enable Mechanisms
D Chabi, W Zhao, E Deng, Y Zhang, NB Romdhane, JO Klein, C Chappert
IEEE, 2014
1162014
Spintronics: Emerging ultra-low-power circuits and systems beyond MOS technology
W Kang, Y Zhang, Z Wang, JO Klein, C Chappert, D Ravelosona, G Wang, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 12 (2), 1-42, 2015
1142015
Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories
W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ...
Circuits and Systems I: Regular Papers, IEEE Transactions on 61 (2), 443-454, 2013
1122013
Magnetic Adder Based on Racetrack Memory
HP Trinh, W Zhao, JO Klein, Y Zhang, D Ravelsona, C Chappert
Circuits and Systems I: Regular Papers, IEEE Transactions on 60 (6), 1469-1477, 2013
1052013
Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses
Y Wang, Y Zhang, EY Deng, JO Klein, LAB Naviner, WS Zhao
Microelectronics Reliability 54 (9-10), 1774-1778, 2014
1012014
Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient
Z Zheng, Y Zhang, V Lopez-Dominguez, L Sánchez-Tejerina, J Shi, ...
Nature Communications 12, 4555, 2021
902021
All spin artificial neural networks based on compound spintronic synapse and neuron
D Zhang, L Zeng, K Cao, M Wang, S Peng, Y Zhang, Y Zhang, JO Klein, ...
IEEE transactions on biomedical circuits and systems 10 (4), 828-836, 2016
902016
Compact model of subvolume MTJ and its design application at nanoscale technology nodes
Y Zhang, B Yan, W Kang, Y Cheng, JO Klein, Y Zhang, Y Chen, W Zhao
IEEE Transactions on Electron Devices 62 (6), 2048-2055, 2015
902015
Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications
Y Zhang, W Zhao, G Prenat, T Devolder, JO Klein, C Chappert, B Dieny, ...
IEEE Transactions on Magnetics 49 (7), 4375-4378, 2013
852013
Skyrmions in magnetic tunnel junctions
X Zhang, W Cai, X Zhang, Z Wang, Z Li, Y Zhang, K Cao, N Lei, W Kang, ...
ACS applied materials & interfaces 10 (19), 16887-16892, 2018
822018
Self-enabled “error-free” switching circuit for spin transfer torque MRAM and logic
Y Lakys, WS Zhao, T Devolder, Y Zhang, JO Klein, D Ravelosona, ...
IEEE Transactions on Magnetics 48 (9), 2403-2406, 2012
752012
Separated Pre-Charge Sensing Amplifier for Deep Submicron MTJ/CMOS Hybrid Logic Circuits
W Kang, E Deng, J Klein, Y Zhang, C CHAPPERT, D Ravelosona, ...
IEEE, 2014
69*2014
Tunnel junction with perpendicular magnetic anisotropy: Status and challenges
M Wang, Y Zhang, X Zhao, W Zhao
Micromachines 6 (8), 1023-1045, 2015
622015
Current-limiting challenges for all-spin logic devices
L Su, Y Zhang, JO Klein, Y Zhang, A Bournel, A Fert, W Zhao
Scientific reports 5 (1), 14905, 2015
602015
Ultra-high density content addressable memory based on current induced domain wall motion in magnetic track
Y Zhang, W Zhao, JO Klein, D Ravelsona, C Chappert
IEEE transactions on magnetics 48 (11), 3219-3222, 2012
582012
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