Tailoring a high‐transmission fiber probe for photon scanning tunneling microscope T Saiki, S Mononobe, M Ohtsu, N Saito, J Kusano Applied physics letters 68 (19), 2612-2614, 1996 | 269 | 1996 |
Near-field optical mapping of exciton wave functions in a GaAs quantum dot K Matsuda, T Saiki, S Nomura, M Mihara, Y Aoyagi, S Nair, T Takagahara Physical review letters 91 (17), 177401, 2003 | 225 | 2003 |
Near-field optical fiber probe optimized for illumination–collection hybrid mode operation T Saiki, K Matsuda Applied Physics Letters 74 (19), 2773-2775, 1999 | 213 | 1999 |
Homogeneous linewidth broadening in a single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical … K Matsuda, K Ikeda, T Saiki, H Tsuchiya, H Saito, K Nishi Physical Review B 63 (12), 121304, 2001 | 113 | 2001 |
Low temperature near-field photoluminescence spectroscopy of InGaAs single quantum dots T Saiki, K Nishi, M Ohtsu Japanese journal of applied physics 37 (3S), 1638, 1998 | 98 | 1998 |
Reproducible fabrication of a fiber probe with a nanometric protrusion for near-field optics S Mononobe, M Naya, T Saiki, M Ohtsu Applied optics 36 (7), 1496-1500, 1997 | 96 | 1997 |
Fabrication of a triple tapered probe for near-field optical spectroscopy in UV region based on selective etching of a multistep index fiber S Mononobe, T Saiki, T Suzuki, S Koshihara, M Ohtsu Optics communications 146 (1-6), 45-48, 1998 | 93 | 1998 |
Near‐field fluorescence imaging of single molecules with a resolution in the range of 10 nm N Hosaka, T Saiki Journal of microscopy 202 (2), 362-364, 2001 | 90 | 2001 |
Photon echo induced by two-exciton coherence in a GaAs quantum well T Saiki, M Kuwata-Gonokami, T Matsusue, H Sakaki Physical Review B 49 (11), 7817, 1994 | 83 | 1994 |
Room-temperature photoluminescence spectroscopy of self-assembled single quantum dots by using highly sensitive near-field scanning optical … K Matsuda, T Saiki, H Saito, K Nishi Applied Physics Letters 76 (1), 73-75, 2000 | 82 | 2000 |
Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse M Konishi, H Santo, Y Hongo, K Tajima, M Hosoi, T Saiki Applied Optics 49 (18), 3470-3473, 2010 | 81 | 2010 |
Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm K Matsuda, T Saiki, S Nomura, M Mihara, Y Aoyagi Applied physics letters 81 (12), 2291-2293, 2002 | 81 | 2002 |
Photoluminescence intermittency in an individual single-walled carbon nanotube at room temperature K Matsuda, Y Kanemitsu, K Irie, T Saiki, T Someya, S Miyauchi, ... Applied Physics Letters 86 (12), 2005 | 80 | 2005 |
Surface enhanced Raman scattering properties using Au-coated ZnO nanorods grown by two-step, off-axis pulsed laser deposition T Sakano, Y Tanaka, R Nishimura, NN Nedyalkov, PA Atanasov, T Saiki, ... Journal of Physics D: Applied Physics 41 (23), 235304, 2008 | 77 | 2008 |
Ultrafast crystalline-to-amorphous phase transition in Ge2Sb2Te5 chalcogenide alloy thin film using single-shot imaging spectroscopy J Takeda, W Oba, Y Minami, T Saiki, I Katayama Applied physics letters 104 (26), 2014 | 68 | 2014 |
Single-shot 25-frame burst imaging of ultrafast phase transition of Ge2Sb2Te5 with a sub-picosecond resolution T Suzuki, R Hida, Y Yamaguchi, K Nakagawa, T Saiki, F Kannari Applied Physics Express 10 (9), 092502, 2017 | 65 | 2017 |
Near-field Raman spectral measurement of polydiacetylene Y Narita, T Tadokoro, T Ikeda, T Saiki, S Mononobe, M Ohtsu Applied spectroscopy 52 (9), 1141-1144, 1998 | 65 | 1998 |
Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature K Matsuda, T Saiki, M Takahashi, A Moto, S Takagishi Applied Physics Letters 78 (11), 1508-1510, 2001 | 57 | 2001 |
Design and optimization of tapered structure of near‐field fibre probe based on finite‐difference time‐domain simulation H Nakamura, T Sato, H Kambe, K Sawada, T Saiki Journal of Microscopy 202 (1), 50-52, 2001 | 56 | 2001 |
Proposal of a small self-holding 2× 2 optical switch using phase-change material Y Ikuma, T Saiki, H Tsuda IEICE Electronics Express 5 (12), 442-445, 2008 | 53 | 2008 |