| Improved near infrared energy harvesting through heterogeneously coupled SK on SML quantum dot heterostructure D Das, DP Panda, B Tongbram, J Saha, V Deviprasad, H Rawool, ... Solar Energy Materials and Solar Cells 185, 549-557, 2018 | 39 | 2018 |
| Enhanced luminescence and optical performance through strain minimization in self-assembled InAs QDs using dual quaternary-ternary/ternary-quaternary capping J Saha, D Panda, D Das, V Chavan, S Chakrabarti Journal of Luminescence 197, 297-303, 2018 | 30 | 2018 |
| Higher performance optoelectronic devices with In0. 21Al0. 21Ga0. 58As/In0. 15Ga0. 85As capping of III-V quantum dots J Saha, D Panda, B Tongbram, D Das, V Chavan, S Chakrabarti Journal of Luminescence 210, 75-82, 2019 | 21 | 2019 |
| Optimization of hybrid InAs stranski krastanov and submonolayer quantum dot heterostructures and its effect on photovoltaic energy conversion efficiency in near infrared region D Das, DP Panda, B Tongbram, J Saha, V Chavan, S Chakrabarti Solar Energy 171, 64-72, 2018 | 19 | 2018 |
| Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure D Panda, J Saha, A Balgarkashi, S Shetty, H Rawool, SM Singh, ... Journal of Alloys and Compounds 736, 216-224, 2018 | 19 | 2018 |
| A comprehensive analysis of strain profile in the heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) quantum dot heterostructures S Choudhary, J Saha, B Tongbram, D Panda, D Das, S Chakrabarti Journal of Alloys and Compounds 847, 156483, 2020 | 16 | 2020 |
| Theoretical correlation and effect of annealing on the photoresponse of vertically strain-coupled In0. 5Ga0. 5As/GaAs quantum dot heterostructures D Panda, J Saha, D Das, SM Singh, H Rawool, S Chakrabarti Journal of Applied Physics 126 (12), 2019 | 16 | 2019 |
| Vertically coupled hybrid InAs sub-monolayer on InAs Stranski–Krastanov quantum dot heterostructure: toward next generation broadband IR detection D Das, J Saha, D Panda, B Tongbram, PP Raut, R Ramavath, S Mondal, ... IEEE Transactions on Nanotechnology 19, 76-83, 2019 | 13 | 2019 |
| Impact of Sb Composition on Strain Profile of GaAs1-xSbx Capped InAs Quantum Dots JS Krishna, D Panda, S Chakrabarti IEEE Transactions on Nanotechnology 18, 234-239, 2019 | 13 | 2019 |
| Study on inter band and inter sub-band optical transitions with varying InAs/InGaAs sub-monolayer quantum dot heterostructure stacks grown by molecular beam epitaxy SR Shriram, R Kumar, D Panda, J Saha, B Tongbram, MR Mantri, SA Gazi, ... IEEE Transactions on Nanotechnology 19, 601-608, 2020 | 10 | 2020 |
| Impact of digital alloy capping layers on bilayer InAs quantum dot heterostructures R Kumar, J Saha, S Chakrabarti IEEE Transactions on Nanotechnology 19, 368-374, 2020 | 10 | 2020 |
| Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural … R Gourishetty, D Panda, S Dongre, J Saha, SA Gazi, S Chakrabarti Journal of Luminescence 233, 117899, 2021 | 9 | 2021 |
| Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy capping materials: Theory and experiment R Kumar, J Saha, D Panda, R Kumar, SA Gazi, R Gourishetty, ... Optical Materials 108, 110419, 2020 | 9 | 2020 |
| The role and growth of strain–reducing layer by molecular-beam epitaxy in a multi–stack InAs/(In, Ga) As sub-monolayer quantum dot heterostructure SR Shriram, D Panda, R Kumar, J Saha, B Tongbram, MR Mantri, SA Gazi, ... Optical Materials 114, 110817, 2021 | 8 | 2021 |
| A comparative analysis of analog and digital alloy technique of InxGa1-xAs capping material on InAs quantum dot heterostructures R Kumar, J Saha, S Chakrabarti Nanophotonics VIII 11345, 310-316, 2020 | 7 | 2020 |
| Enhanced performance of in (Ga) as QD based optoelectronic devices through improved interface quality between QD and matrix material D Panda, A Chatterjee, J Saha, D Das, SM Singh, SK Pal, S Chakrabarti physica status solidi (b) 256 (11), 1900138, 2019 | 7 | 2019 |
| Bilayer self-assembled InAs QD using digital alloy capping layer approach: experiment and theory R Kumar, J Saha, D Panda, R Kumar, SA Gazi, R Gourishetty, ... Low-Dimensional Materials and Devices 2020 11465, 85-94, 2020 | 6 | 2020 |
| Metamorphosis of self-assembled InAs quantum dot through variation of growth rates B Tongbram, J Saha, S Sengupta, S Chakrabarti Journal of Alloys and Compounds 824, 153870, 2020 | 6 | 2020 |
| Structural, electronic and optical properties of fluorinated bilayer silicene MA Kharadi, S Mittal, J Saha Optical Materials 136, 113418, 2023 | 5 | 2023 |
| Subsiding strain-induced In-Ga intermixing in InAs/InxGa1− xAs sub-monolayer quantum dots for room temperature photodetectors SR Shriram, R Gourishetty, D Panda, D Das, S Dongre, J Saha, ... Infrared Physics & Technology 121, 104047, 2022 | 5 | 2022 |
Debi Prasad Pandaimec, BelgiumVerified email at imec.be
