| Electron spin decoherence in isotope-enriched silicon WM Witzel, MS Carroll, A Morello, Ł Cywiński, SD Sarma Physical review letters 105 (18), 187602, 2010 | 176 | 2010 |
| Semiconductor devices with reduced active region defects and unique contacting schemes JD Bude, M Carroll, CA King US Patent 7,012,314, 2006 | 169 | 2006 |
| Coherent coupling between a quantum dot and a donor in silicon P Harvey-Collard, NT Jacobson, M Rudolph, J Dominguez, GA Ten Eyck, ... Nature communications 8 (1), 1-6, 2017 | 103* | 2017 |
| Semiconductor devices with reduced active region defects and unique contacting schemes JD Bude, M Carroll, CA King US Patent 7,297,569, 2007 | 99 | 2007 |
| Quantum decoherence of the central spin in a sparse system of dipolar coupled spins WM Witzel, MS Carroll, Ł Cywiński, SD Sarma Physical Review B 86 (3), 035452, 2012 | 95 | 2012 |
| Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry EP Nordberg, GA Ten Eyck, HL Stalford, RP Muller, RW Young, K Eng, ... Physical Review B 80 (11), 115331, 2009 | 95 | 2009 |
| A silicon metal-oxide-semiconductor electron spin-orbit qubit RM Jock, NT Jacobson, P Harvey-Collard, AM Mounce, V Srinivasa, ... Nature communications 9 (1), 1-8, 2018 | 88 | 2018 |
| High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism P Harvey-Collard, B D’Anjou, M Rudolph, NT Jacobson, J Dominguez, ... Physical Review X 8 (2), 021046, 2018 | 86 | 2018 |
| Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET LA Tracy, EH Hwang, K Eng, GA Ten Eyck, EP Nordberg, K Childs, ... Physical Review B 79 (23), 235307, 2009 | 85 | 2009 |
| 25-nm p-channel vertical MOSFETs with SiGeC source-drains M Yang, CL Chang, M Carroll, JC Sturm IEEE Electron Device Letters 20 (6), 301-303, 1999 | 67 | 1999 |
| Valley splitting of single-electron Si MOS quantum dots JK Gamble, P Harvey-Collard, NT Jacobson, AD Baczewski, E Nielsen, ... Applied Physics Letters 109 (25), 253101, 2016 | 60 | 2016 |
| Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals: evidence of implant damage enhanced diffusivities MS Carroll, R Koudelka Semiconductor science and technology 22 (1), S164, 2006 | 59 | 2006 |
| Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures LA Tracy, DR Luhman, SM Carr, NC Bishop, GA Ten Eyck, T Pluym, ... Applied Physics Letters 108 (6), 063101, 2016 | 55 | 2016 |
| Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor MJ Curry, TD England, NC Bishop, G Ten-Eyck, JR Wendt, T Pluym, ... Applied Physics Letters 106 (20), 203505, 2015 | 49 | 2015 |
| Implications of simultaneous requirements for low-noise exchange gates in double quantum dots E Nielsen, RW Young, RP Muller, MS Carroll Physical Review B 82 (7), 075319, 2010 | 49 | 2010 |
| Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation MS Carroll, CL Chang, JC Sturm, T Büyüklimanli Applied Physics Letters 73 (25), 3695-3697, 1998 | 48 | 1998 |
| Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots EP Nordberg, HL Stalford, R Young, GA Ten Eyck, K Eng, LA Tracy, ... Applied Physics Letters 95 (20), 202102, 2009 | 47 | 2009 |
| Low‐Temperature Preparation of Oxygen‐and Carbon‐Free Silicon and Silicon‐Germanium Surfaces for Silicon and Silicon‐Germanium Epitaxial Growth by Rapid Thermal Chemical Vapor … MS Carroll, JC Sturm, M Yang Journal of The Electrochemical Society 147 (12), 4652, 2000 | 44 | 2000 |
| Modeling of boron and phosphorus implantation into (100) germanium YS Suh, MS Carroll, RA Levy, MA Sahiner, G Bisognin, CA King IEEE transactions on electron devices 52 (1), 91-98, 2004 | 42 | 2004 |
| Spin-orbit interactions for singlet-triplet qubits in silicon P Harvey-Collard, NT Jacobson, C Bureau-Oxton, RM Jock, V Srinivasa, ... Physical review letters 122 (21), 217702, 2019 | 40 | 2019 |
Rick MullerSandia National LaboratoriesPotvrđena adresa e-pošte na sandia.gov
