Patrick McNally
In-situ sensing, process monitoring and machine control in Laser Powder Bed Fusion: A review
R McCann, MA Obeidi, C Hughes, É McCarthy, DS Egan, ...
Additive Manufacturing 45, 102058, 2021
Mechanism of stress relaxation and phase transformation in additively manufactured Ti-6Al-4V via in situ high temperature XRD and TEM analyses
FR Kaschel, RK Vijayaraghavan, A Shmeliov, EK McCarthy, M Canavan, ...
Acta Materialia 188, 720-732, 2020
Citrate-capped gold nanoparticle electrophoretic heat production in response to a time-varying radio-frequency electric field
SJ Corr, M Raoof, Y Mackeyev, S Phounsavath, MA Cheney, BT Cisneros, ...
The Journal of Physical Chemistry C 116 (45), 24380-24389, 2012
Characterization of the carrot defect in 4H-SiC epitaxial layers
J Hassan, A Henry, PJ McNally, JP Bergman
Journal of Crystal Growth 312 (11), 1828-1837, 2010
Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon
L O’Reilly, OF Lucas, PJ McNally, A Reader, G Natarajan, S Daniels, ...
Journal of applied physics 98 (11), 2005
Low temperature growth GaAs on Ge
L Knuuttila, A Lankinen, J Likonen, H Lipsanen, X Lu, P McNally, ...
Japanese journal of applied physics 44 (11R), 7777, 2005
Crack propagation and fracture in silicon wafers under thermal stress
A Danilewsky, J Wittge, K Kiefl, D Allen, P McNally, J Garagorri, ...
Journal of applied crystallography 46 (4), 849-855, 2013
Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging
AN Danilewsky, J Wittge, A Croell, D Allen, P McNally, P Vagovič, ...
Journal of crystal growth 318 (1), 1157-1163, 2011
Growth and characterisation of wide-bandgap, I-VII optoelectronic materials on silicon
L O’Reilly, G Natarajan, PJ McNally, D Cameron, OF Lucas, ...
Journal of Materials Science: Materials in Electronics 16, 415-419, 2005
Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs
JC Ramirez, PJ McNally, LS Cooper, JJ Rosenberg, LB Freund, ...
IEEE transactions on electron devices 35 (8), 1232-1240, 1988
Enhanced activation of Zn‐implanted GaAs
DE Davies, PJ McNally
Applied physics letters 44 (3), 304-306, 1984
Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications
G Natarajan, S Daniels, DC Cameron, L O’Reilly, A Mitra, PJ McNally, ...
Journal of Applied Physics 100 (3), 2006
Evaluation via powder metallurgy of nano-reinforced iron powders developed for selective laser melting applications
A Mussatto, R Groarke, A Ahmed, IUI Ahad, RK Vijayaraghavan, A O'Neill, ...
Materials & Design 182, 108046, 2019
Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell
KV Rajani, S Daniels, M Rahman, A Cowley, PJ McNally
Materials Letters 111, 63-66, 2013
Determination of crystal misorientation in epitaxial lateral overgrowth of GaN
WM Chen, PJ McNally, K Jacobs, T Tuomi, AN Danilewsky, ZR Zytkiewicz, ...
Journal of crystal growth 243 (1), 94-102, 2002
Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping
L O’Reilly, A Mitra, G Natarajan, OF Lucas, PJ McNally, S Daniels, ...
Journal of crystal growth 287 (1), 139-144, 2006
Evaluation and comparison of hydroxyapatite coatings deposited using both thermal and non-thermal techniques
JN Barry, B Twomey, A Cowley, L O'Neill, PJ McNally, DP Dowling
Surface and Coatings Technology 226, 82-91, 2013
Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers
R Rantamäki, T Tuomi, ZR Zytkiewicz, J Domagala, PJ McNally, ...
Journal of applied physics 86 (8), 4298-4303, 1999
Thermal slip sources at the extremity and bevel edge of silicon wafers
BK Tanner, J Wittge, D Allen, MC Fossati, AN Danilwesky, P McNally, ...
Journal of Applied Crystallography 44 (3), 489-494, 2011
Use of plasma impedance monitoring for determination of sf6 reactive ion etching end point of the sio2/si system
MNA Dewan, PJ McNally, T Perova, PAF Herbert
Microelectron. Eng 65 (1-2), 25-46, 2003
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